公开(公告)号：US20190007633A1

公开(公告)日：2019-01-03

申请号：US15877811

申请日：2018-01-23

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Hye-Won Mun

IPC: H04N5/365 ,  H01L27/146

Abstract: An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.

公开(公告)号：US10096633B2

公开(公告)日：2018-10-09

申请号：US15192816

申请日：2016-06-24

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Min-Ki Na ,  Dong-Hyun Woo ,  Ho-Ryeong Lee

IPC: H01L31/062 ,  H01L27/146 ,  H01L27/06 ,  H01L29/423

Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.

公开(公告)号：US09992435B2

公开(公告)日：2018-06-05

申请号：US15152339

申请日：2016-05-11

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Sung-Kun Park ,  Yun-Hui Yang

IPC: H04N5/376 ,  H04N5/235 ,  H04N5/335 ,  H04N5/378 ,  H04N5/247 ,  H01L27/146

CPC classification number: H04N5/3765 ,  H04N5/3597

Abstract: An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.

公开(公告)号：US09735197B1

公开(公告)日：2017-08-15

申请号：US15333856

申请日：2016-10-25

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Min-Ki Na ,  Cha-Young Lee

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14812 ,  H01L27/14616 ,  H01L27/14643

Abstract: Image sensors are provided. The image sensor may include a photodiode formed in a substrate, a lower interlayer dielectric layer formed over the substrate, a drive transistor gate electrode formed over the lower interlayer dielectric layer, and a transfer transistor gate electrode including an upper portion and a lower portion. The upper portion of the transfer transistor gate electrode may be formed over the drive transistor gate electrode. The lower portion of the transfer transistor gate electrode may be formed in a pillar shape and vertically extends from the upper portion of the transfer transistor gate electrode through the drive transistor gate electrode and the lower interlayer dielectric layer into the substrate.

公开(公告)号：US11605657B2

公开(公告)日：2023-03-14

申请号：US17080321

申请日：2020-10-26

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag

IPC: H01L27/146 ,  H04N5/376 ,  H04N5/3745

Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.

公开(公告)号：US11043518B2

公开(公告)日：2021-06-22

申请号：US16218227

申请日：2018-12-12

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag

IPC: H01L27/146 ,  H04N5/3745

Abstract: An image sensor includes a first pixel group and a second pixel group positioned adjacent to the first pixel group. The first pixel group includes a first light receiving circuit and first and second driving circuits formed adjacent to one end of the first light receiving circuit. The first light receiving circuit includes a plurality of unit pixels sharing a first floating diffusion. The second pixel group includes a second light receiving circuit and third and fourth driving circuits formed adjacent to one end of the second light receiving circuit. The second light receiving circuit includes a plurality of unit pixels sharing a second floating diffusion. The first driving circuit is coupled in parallel to the third driving circuit, and the second driving circuit is coupled in parallel to the fourth driving circuit.

公开(公告)号：US20190237497A1

公开(公告)日：2019-08-01

申请号：US16218281

申请日：2018-12-12

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/376

CPC classification number: H01L27/14605 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/37455 ,  H04N5/3765

Abstract: An image sensor may include a pixel array including a plurality of pixel blocks operable to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels that share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels that share a second floating diffusion; a first driving circuit positioned between the first light receiving circuit and the second light receiving circuit; a second driving circuit positioned adjacent to the other side facing away from one side of the first light receiving circuit or the second light receiving circuit, which is adjacent to the first driving circuit; and a third driving circuit positioned adjacent to the first driving circuit or the second driving circuit.

公开(公告)号：US20190237496A1

公开(公告)日：2019-08-01

申请号：US16218227

申请日：2018-12-12

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/14605 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/3745

Abstract: An image sensor includes a first pixel group and a second pixel group positioned adjacent to the first pixel group. The first pixel group includes a first light receiving circuit and first and second driving circuits formed adjacent to one end of the first light receiving circuit. The first light receiving circuit includes a plurality of unit pixels sharing a first floating diffusion. The second pixel group includes a second light receiving circuit and third and fourth driving circuits formed adjacent to one end of the second light receiving circuit. The second light receiving circuit includes a plurality of unit pixels sharing a second floating diffusion. The first driving circuit is coupled in parallel to the third driving circuit, and the second driving circuit is coupled in parallel to the fourth driving circuit.

公开(公告)号：US10218927B2

公开(公告)日：2019-02-26

申请号：US15877811

申请日：2018-01-23

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Hye-Won Mun

IPC: H01L27/146 ,  H04N5/365 ,  H04N5/378 ,  H04N9/04 ,  H04N9/07

Abstract: An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.

公开(公告)号：US10043838B2

公开(公告)日：2018-08-07

申请号：US15215770

申请日：2016-07-21

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Yun-Hui Yang ,  Young-Jun Kwon

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.