公开(公告)号：US09589830B2

公开(公告)日：2017-03-07

申请号：US14686229

申请日：2015-04-14

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract translation: 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

公开(公告)号：US09425081B2

公开(公告)日：2016-08-23

申请号：US14386937

申请日：2013-03-14

Applicant: Soitec

Inventor： Nadia Ben Mohamed ,  Carole David ,  Camille Rigal

IPC: H01L21/762 ,  H01L21/20 ,  H01L21/18 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76251 ,  H01L21/76259

Abstract: The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.

Abstract translation: 本发明涉及一种用于将原子或离子物质注入由半导体材料制成的一批衬底中的方法，其中：由半导体材料制成的每个衬底位于批量注入机的相应支撑件上，每个衬底包括薄层 表面电绝缘子; 并且在衬底的整个表面上通过它们的绝缘体层注入至少一种离子或原子物质的剂量，以在每个衬底内形成脆性区域，并在其之间形成薄层半导体材料 绝缘体层和基板的脆性区域，该注入方法的特征在于，在该方法期间，其上定位有基板的每个支撑件具有至少两个相对于垂直于植入方向的平面的独立倾斜度 物种以提高物质在基质中的植入深度。 本公开还涉及通过实施注入方法获得的绝缘体上半导体类型的结构。

公开(公告)号：US20150221545A1

公开(公告)日：2015-08-06

申请号：US14625407

申请日：2015-02-18

Applicant: Soitec

Inventor： Christophe Maleville ,  Eric Neyret ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324

CPC classification number: H01L21/76254 ,  H01L21/324

Abstract: A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical-mechanical polishing (CMP) is not needed.

Abstract translation: 一种用于在基板上制造高质量半导体材料有用层的方法。 该方法包括将至少两种不同的原子物质植入施主衬底的表面至受控的平均注入深度以在其中形成弱化区域并限定有用层。 进行植入步骤以使弱化区域的低频粗糙度最小化。 接下来，该方法包括将支撑衬底接合到施主衬底的表面，以及沿着弱化区从施主衬底分离有用层。 因此形成了在支撑基板上包括有用层的结构，其中有用层具有用于进一步处理的表面。 该技术还包括热处理该结构以最小化有用层的表面的高频粗糙度。 结果是具有足够平滑度的表面，使得不需要化学机械抛光（CMP）。

公开(公告)号：US20240357937A1

公开(公告)日：2024-10-24

申请号：US18685991

申请日：2022-08-17

Applicant: Soitec

Inventor： Cédric Charles-Alfred ,  Nadia Ben Mohamed

IPC: H10N30/072 ,  H10N30/853

CPC classification number: H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A method for transferring a useful layer to a carrier substrate comprises: a) providing a donor substrate including a donor layer; b) forming an embrittlement area by implanting species in the donor layer and defining therewith a useful layer; c) assembling the carrier substrate with the donor substrate; d) a heat treatment step including a first phase and a second phase, wherein the first phase, having a first duration, is heated to a first temperature and is suitable for maturing defects and preventing a fracture from occurring in the embrittlement area, and wherein the second phase, having a second duration, comprises a bearing at a second temperature, below the first temperature, and is suitable for causing a fracture to occur along the embrittlement area.

公开(公告)号：US11670540B2

公开(公告)日：2023-06-06

申请号：US17190004

申请日：2021-03-02

Applicant: Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

CPC classification number: H01L21/76254 ,  H01L21/263 ,  H01L21/324 ,  H01L21/76251

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US20220181173A1

公开(公告)日：2022-06-09

申请号：US17435899

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US20220157651A1

公开(公告)日：2022-05-19

申请号：US17439300

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

Abstract: A method for transferring a useful layer to a carrier substrate, includes the following steps: a) providing a donor substrate including a buried weakened plane; b) providing a carrier substrate; c) joining the donor substrate, by its front face, to the carrier substrate along a bonding interface so as to form a bonded structure; d) annealing the bonded structure in order to apply a weakening thermal budget thereto and to bring the buried weakened plane to a defined level of weakening; and e) initiating a splitting wave in the weakened plane by applying a stress to the bonded structure, the splitting wave self-propagating along the weakened plane to result in the useful layer being transferred to the carrier substrate. The splitting wave is initiated when the bonded structure is subjected to a temperature between 150° C. and 250° C.

公开(公告)号：US11276605B2

公开(公告)日：2022-03-15

申请号：US16473475

申请日：2018-01-10

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Didier Landru ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324

Abstract: A method of fabricating a semiconductor substrate includes the following activities: a) providing a donor substrate with a weakened zone inside the donor substrate, the weakened zone forming a border between a layer to be transferred and the rest of the donor substrate, b) attaching the donor substrate to a receiver substrate, the layer to be transferred being located at the interface between the donor substrate and the receiver substrate; c) detaching the receiver substrate along with the transferred layer from the rest of the donor substrate, at the weakened zone; and d) at least one step of smoothing the surface of the transferred layer, wherein the semiconductor substrate obtained from step c) is kept, at least from the moment of detachment until the end of the smoothing step, in a non-oxidizing inert atmosphere or in a mixture of non-oxidizing inert gases. Semiconductor substrates are fabricated using such a method.

公开(公告)号：US20160351438A1

公开(公告)日：2016-12-01

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabell Guerin

IPC: H01L21/762 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

Abstract translation: 将被称为供体衬底的单晶衬底的层转移到接收器衬底上的方法包括：提供单晶施主衬底，具有沿晶体的第一方向取向的凹槽的衬底和包围晶体的弱区域 要转移的层，将单晶供体基板接合到接收器基板上，供体基板的与弱磁区相对的相对于待转移层的主表面在接合界面处，以及供体的分离 基底沿弱点区域。 在该方法中，施主衬底在与接收器衬底接合的主表面上具有基本上沿与第一方向不同的晶体的第二方向延伸的原子台阶阵列。

公开(公告)号：US11424156B2

公开(公告)日：2022-08-23

申请号：US16969346

申请日：2019-01-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Rénald Guerin ,  Norbert Colombet

IPC: H01L21/762 ,  H01L21/20

Abstract: A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.