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11.发明申请公开(公告)号：US20160072057A1
公开(公告)日：2016-03-10
申请号：US14938121
申请日：2015-11-11
Applicant: STMicroelectronics S.r.l.
Inventor： Dario Paci , Marco Morelli , Caterina Riva
CPC classification number: H01L43/12 , G01R33/0052 , G01R33/09 , G01R33/096 , G01R33/098 , H01L27/22 , H01L43/08
Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
Abstract translation: 集成磁阻器件包括半导体材料的衬底，其在第一表面上被绝缘层覆盖。 铁磁材料的磁阻电阻在绝缘层内延伸并限定传感器的灵敏度平面。 铁磁材料的集中器包括沿横向方向延伸到灵敏度平面并且与磁电阻器垂直偏移的至少一个臂。 集中器集中使垂直于灵敏度平面的磁通线偏转，以产生指向与感光平面平行的方向的磁场分量。
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12.发明授权公开(公告)号：US11125835B2
公开(公告)日：2021-09-21
申请号：US16367109
申请日：2019-03-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Dario Paci
Abstract: An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.
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公开(公告)号：US10981778B2
公开(公告)日：2021-04-20
申请号：US16752321
申请日：2020-01-24
Applicant: STMicroelectronics S.R.L.
Inventor： Dario Paci , Domenico Giusti , Irene Martini
Abstract: A MEMS device includes a semiconductor support body having a first cavity, a membrane including a peripheral portion, fixed to the support body, and a suspended portion. A first deformable structure is at a distance from a central part of the suspended portion of the membrane and a second deformable structure is laterally offset relative to the first deformable structure towards the peripheral portion of the membrane. A projecting region is fixed under the membrane. The second deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a first direction, and the first deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a second direction.
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14.发明授权公开(公告)号：US10288697B2
公开(公告)日：2019-05-14
申请号：US14947835
申请日：2015-11-20
Applicant: STMicroelectronics S.R.L.
Inventor： Dario Paci
Abstract: An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.
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公开(公告)号：US10254355B2
公开(公告)日：2019-04-09
申请号：US15584672
申请日：2017-05-02
Applicant: STMicroelectronics S.r.l.
Inventor： Giacomo Langfelder , Alessandro Tocchio , Dario Paci
IPC: G01R33/028 , G01R33/02 , G01R33/00 , H01L41/08 , H01L41/113 , G01R33/038
Abstract: A magnetic field sensor includes a die and a current generator in the die. The current generator generates a driving current. A Lorentz force transducer is also formed in the die and coupled to the current generator to obtain measurements of a magnetic field based upon the Lorentz force. The magnetic field has a resonance frequency and the current generator drives the Lorentz force sensor with the driving current having a non-zero frequency different from the resonance frequency.
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Patent Agency Ranking
公开(公告)号：US09671471B2
公开(公告)日：2017-06-06
申请号：US14446248
申请日：2014-07-29
Applicant: STMicroelectronics S.r.l.
Inventor： Giacomo Langfelder , Alessandro Tocchio , Dario Paci
IPC: G01R33/028 , G01R33/038
CPC classification number: G01R33/0283 , G01R33/0064 , G01R33/0213 , G01R33/028 , G01R33/0286 , G01R33/038 , H01L41/08 , H01L41/1132
Abstract: A magnetic-field sensor, including: a die, a current generator in the die. The current generator generating a driving current. A Lorentz force transducer also in the die and being configured to obtain measurements of magnetic field based upon the Lorentz force is coupled to the current generator. The transducer having a resonance frequency. The current generator is such that the driving current has a non-zero frequency different from the resonance frequency.
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公开(公告)号：US20160377691A1
公开(公告)日：2016-12-29
申请号：US15135793
申请日：2016-04-22
Applicant: STMicroelectronics S.r.l.
Inventor： Dario Paci , Marco Marchesi , Marco Morelli
IPC: G01R33/09
CPC classification number: G01R33/096 , G01R33/0011 , G01R33/025 , G01R33/07 , G01R33/09
Abstract: An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor.
Abstract translation: 一个集成的AMR磁阻传感器具有一个磁电阻，一组/复位线圈和一个彼此顶部布置的屏蔽区域。 设置/复位线圈位于磁电阻器和屏蔽区域之间。 磁阻电阻由具有平行于优先磁化方向的第一方向的长度和垂直于第一方向的第二方向的宽度的细长形状的磁阻带形成。 固定/复位线圈具有横向于磁阻带延伸的至少一个拉伸。 屏蔽区域是铁磁材料，并且具有大于磁阻带宽度的第二方向的宽度，以便衰减穿过磁阻带的外部磁场并增加磁阻传感器的灵敏度。
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18.发明申请公开(公告)号：US20140159717A1
公开(公告)日：2014-06-12
申请号：US14102899
申请日：2013-12-11
Applicant: STMicroelectronics S.r.l.
Inventor： Dario Paci , Dino Faralli , Andrea Picco
CPC classification number: G01R33/09 , G01R33/0011 , G01R33/0052 , G01R33/096
Abstract: An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor.
Abstract translation: 一种集成磁阻传感器，其形成在包括具有覆盖基板的表面的表面和绝缘区域的基板的芯片中。 第一铁磁材料的磁阻电阻器形成在绝缘区域中并且具有平行于表面的灵敏度平面。 第二铁磁材料的集中器形成在基板中，并且具有至少一个在横向方向上延伸到灵敏度平面的臂。 臂的一端与磁电阻接触。
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19.发明授权公开(公告)号：US12068362B2
公开(公告)日：2024-08-20
申请号：US17494475
申请日：2021-10-05
Applicant: STMicroelectronics S.r.l.
Inventor： Fabrizio Cerini , Silvia Adorno , Dario Paci , Marco Salina
IPC: H01L23/522 , H01L23/528 , H01L23/538 , H01L49/02
CPC classification number: H01L28/86 , H01L23/5223
Abstract: An electrode structure includes a pad of conductive material, and a conductive strip having a first end physically and electrically coupled to the pad. The pad includes an annular element internally defining a through opening. The first end of the conductive strip is physically and electrically coupled to the annular element by a transition region so that, when the conductive strip undergoes expansion by the thermal effect, a stress spreads from the conductive strip to the annular element by the transition region.
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20.发明授权公开(公告)号：US11614634B2
公开(公告)日：2023-03-28
申请号：US16880141
申请日：2020-05-21
Applicant: STMicroelectronics S.r.l.
Inventor： Domenico Giusti , Dario Paci
Abstract: A MEMS actuator includes a monolithic body of semiconductor material, with a supporting portion of semiconductor material, orientable with respect to a first and second rotation axes, transverse to each other. A first frame of semiconductor material is coupled to the supporting portion through first deformable elements configured to control a rotation of the supporting portion about the first rotation axis. A second frame of semiconductor material is coupled to the first frame by second deformable elements, which are coupled between the first and the second frames and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements carry respective piezoelectric actuation elements.
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