MEMBRANE MICROFLUIDIC VALVE WITH PIEZOELECTRIC ACTUATION AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:US20200326010A1

    公开(公告)日:2020-10-15

    申请号:US16842474

    申请日:2020-04-07

    Abstract: A microfluidic valve formed in a body having a first and a second surface; an inlet channel extending in the body from the second surface; a first transverse channel extending in the body in a transverse direction with respect to the inlet channel; and an outlet channel extending in the body from the first surface. The inlet channel, the first transverse channel and the outlet channel form a fluidic path. The microfluidic valve further has an occluding portion, formed by the body and extending over the transverse channel; and a piezoelectric actuator coupled to the occluding portion and configured to move the occluding portion from an opening position of the valve, where the occluding portion does not interfere with the fluidic path, and a closing position of the valve, where the occluding portion interferes with and interrupts the fluidic path.

    MICRO-ELECTRO-MECHANICAL DEVICE HAVING TWO BURIED CAVITIES AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:US20200262699A1

    公开(公告)日:2020-08-20

    申请号:US16869159

    申请日:2020-05-07

    Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

    SEMICONDUCTOR INTEGRATED DEVICE WITH ELECTRICAL CONTACTS BETWEEN STACKED DIES AND CORRESPONDING MANUFACTURING PROCESS

    公开(公告)号:US20190330056A1

    公开(公告)日:2019-10-31

    申请号:US16509367

    申请日:2019-07-11

    Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

    MICROPUMP MEMS DEVICE FOR MOVING OR EJECTING A FLUID, IN PARTICULAR MICROBLOWER OR FLOWMETER

    公开(公告)号:US20200325888A1

    公开(公告)日:2020-10-15

    申请号:US16847521

    申请日:2020-04-13

    Abstract: A micropump device is formed in a monolithic semiconductor body integrating a plurality of actuator elements arranged side-by-side. Each actuator element has a first chamber extending at a distance from a first face of the monolithic body; a membrane arranged between the first face and the first chamber; a piezoelectric element extending on the first face over the membrane; a second chamber, arranged between the first chamber and a second face of the monolithic body; a fluidic inlet path fluidically connecting the second chamber with the outside of the monolithic body; and a fluid outlet opening extending in a transverse direction in the monolithic body from the second face as far as the second chamber, through the first chamber. The monolithic formation of the actuator elements and the possibility of driving the actuator elements at different voltages enable precise adjustment of flows, from very low values to high values.

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