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公开(公告)号:US20220169498A1
公开(公告)日:2022-06-02
申请号:US17534286
申请日:2021-11-23
Inventor: Enri DUQI , Lorenzo BALDO , Paolo FERRARI , Benedetto Vigna , Flavio Francesco VILLA , Laura Maria CASTOLDI , Ilaria GELMI
IPC: B81B7/00
Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.
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公开(公告)号:US20210114867A1
公开(公告)日:2021-04-22
申请号:US17072813
申请日:2020-10-16
Applicant: STMicroelectronics S.r.l.
Inventor: Enri DUQI , Fabrizio CERINI , Lorenzo BALDO
Abstract: A MEMS switch is actuatable by a fluid, and includes a piezoelectric pressure sensor that detects the movement of a fluid generating a negative pressure. The piezoelectric pressure sensor is formed by a chip of semiconductor material having a through cavity and a sensitive membrane, which extends over the through cavity and has a first and a second surface. The piezoelectric pressure sensor is mounted on a face of a board having a through hole so that the through cavity overlies and is in fluid connection with the through hole. The board has a fixing structure, which enables securing in an opening of a partition wall separating a first and a second space from each other. The board is arranged so that the first surface of the sensitive membrane faces the first space, and the second surface of the sensitive membrane faces the second space.
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公开(公告)号:US20170253477A1
公开(公告)日:2017-09-07
申请号:US15602760
申请日:2017-05-23
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Lorenzo BALDO , Enri DUQI , Flavio Francesco VILLA
CPC classification number: B81B7/0045 , B81B3/0072 , B81B2201/0228 , B81B2201/025 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2207/012 , B81C1/00182 , B81C1/00325 , B81C2201/0116 , B81C2201/0173 , B81C2203/0785 , G02B26/0858
Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
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4.
公开(公告)号:US20230280227A1
公开(公告)日:2023-09-07
申请号:US18171184
申请日:2023-02-17
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Enri DUQI , Filippo DANIELE , Lorenzo BALDO , Giulio CAPELLI , Salvatore ALONGI
CPC classification number: G01L19/04 , G01L9/0041 , G01L19/0092
Abstract: A pressure sensor device is provided with: a pressure detection structure made in a first die of semiconductor material; a package, configured to internally accommodate the pressure detection structure in an impermeable manner, the package having a base structure and a body structure, arranged on the base structure, with an access opening in contact with an external environment and internally defining a housing cavity, in which the first die is arranged covered with a coating material. The pressure sensor device is also provided with a heating structure, accommodated in the housing cavity and for allowing heating of the pressure detection structure from the inside of the package.
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公开(公告)号:US20210147222A1
公开(公告)日:2021-05-20
申请号:US17161367
申请日:2021-01-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Enri DUQI , Lorenzo BALDO , Domenico GIUSTI
Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.
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公开(公告)号:US20170247249A1
公开(公告)日:2017-08-31
申请号:US15276613
申请日:2016-09-26
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Enri DUQI , Sebastiano CONTI , Lorenzo BALDO , Flavio Francesco VILLA
CPC classification number: B81B7/0038 , B81B3/0086 , B81B7/0019 , B81B7/0061 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2207/012 , B81C1/00269
Abstract: A micro-electro-mechanical pressure sensor device, formed by a cap region and by a sensor region of semiconductor material. An air gap extends between the sensor region and the cap region; a buried cavity extends underneath the air gap, in the sensor region, and delimits a membrane at the bottom. A through trench extends within the sensor region and laterally delimits a sensitive portion housing the membrane, a supporting portion, and a spring portion, the spring portion connecting the sensitive portion to the supporting portion. A channel extends within the spring portion and connects the buried cavity to a face of the second region. The first air gap is fluidically connected to the outside of the device, and the buried cavity is isolated from the outside via a sealing region arranged between the sensor region and the cap region.
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7.
公开(公告)号:US20230356999A1
公开(公告)日:2023-11-09
申请号:US18308562
申请日:2023-04-27
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Filippo DANIELE , Lorenzo BALDO , Davide MAERNA , Enri DUQI
IPC: B81B7/00
CPC classification number: B81B7/0048 , B81B7/008
Abstract: A microelectromechanical device includes a support structure, a microelectromechanical system die, incorporating a microstructure and a connection structure between the microelectromechanical system die and the support structure. The connection structure includes a spacer structure, joined to the support structure, and a film applied to one face of the spacer structure opposite to the support structure. The spacer structure laterally delimits at least in part a cavity and the film extends on the cavity, at a distance from the support structure. The microelectromechanical system die is joined to the film on the cavity.
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公开(公告)号:US20220185661A1
公开(公告)日:2022-06-16
申请号:US17684317
申请日:2022-03-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Enri DUQI , Marco DEL SARTO , Lorenzo BALDO
Abstract: A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.
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公开(公告)号:US20190242772A1
公开(公告)日:2019-08-08
申请号:US16260723
申请日:2019-01-29
Applicant: STMicroelectronics S.r.l.
Inventor: Enri DUQI , Lorenzo BALDO
CPC classification number: G01L19/141 , B81B7/0051 , B81B7/007 , B81C1/00182 , G01L9/0052 , G01L9/0054 , G01L19/0007 , G01L19/0084 , G01L19/12 , G01L19/145
Abstract: A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.
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10.
公开(公告)号:US20190210868A1
公开(公告)日:2019-07-11
申请号:US15866380
申请日:2018-01-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Enri DUQI , Lorenzo BALDO , Marco DEL SARTO , Mikel AZPEITIA URQUIA
Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.
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