公开(公告)号：US20130215931A1

公开(公告)日：2013-08-22

申请号：US13757146

申请日：2013-02-01

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Lorenzo Baldo ,  Paul Georges Marie Rose

IPC: G01K7/01

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。

公开(公告)号：US11740136B2

公开(公告)日：2023-08-29

申请号：US17011723

申请日：2020-09-03

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Paolo Pesenti ,  Mario Chiricosta ,  Calogero Marco Ippolito ,  Mario Maiore

IPC: G01K3/14 ,  H03H17/02 ,  G01K7/02 ,  H03M3/00 ,  H03K19/003 ,  H03K19/018

CPC classification number: G01K3/14 ,  G01K7/02 ,  G01K7/021 ,  H03H17/02 ,  G01K2219/00 ,  H03K19/00307 ,  H03K19/01825 ,  H03M3/43 ,  H03M3/456 ,  H03M3/458

Abstract: A circuit includes a first input terminal, a second input terminal, a third input terminal and an output terminal. A first summation node adds signals at the first and third input terminals. A second summation node subtracts signals at the second and third input terminals. A selector selects between the added signals and subtracted signals in response to a selection signal. The output of the selector is integrated to generate an integrated signal. The integrated signal is compared by a comparator to a threshold, the comparator generating an output signal at the output terminal having a first level and a second level. Feedback of the output signal produces the selection signal causing the selector to select the added signals in response to the first level of the output signal and causing the selector to select the subtracted signals in response to the second level of the output signal.

公开(公告)号：US11036251B2

公开(公告)日：2021-06-15

申请号：US16867299

申请日：2020-05-05

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Mario Chiricosta

IPC: G05F3/26 ,  G05F3/30

Abstract: A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference formed by a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors.

公开(公告)号：US20190072994A1

公开(公告)日：2019-03-07

申请号：US16183101

申请日：2018-11-07

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Mario Chiricosta

IPC: G05F3/26 ,  G05F3/30

CPC classification number: G05F3/267 ,  G05F3/30

Abstract: A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference comprising a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors.

公开(公告)号：US09534974B2

公开(公告)日：2017-01-03

申请号：US13757146

申请日：2013-02-01

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Lorenzo Baldo ,  Paul Georges Marie Rose

IPC: G01K7/00 ,  G01L19/00 ,  G01K7/01 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。

公开(公告)号：US20160327972A1

公开(公告)日：2016-11-10

申请号：US14996684

申请日：2016-01-15

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Mario Chiricosta

IPC: G05F3/26

CPC classification number: G05F3/267 ,  G05F3/30

Abstract: A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference comprising a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors.

Abstract translation: 用于产生带隙电压的电路包括用于产生基极 - 发射极电压差的电路模块，其包括识别第一电流路径和第二电流路径的一对PNP双极衬底晶体管。 n型的第一电流镜连接在第一和第二分支之间，并通过电阻进一步连接，以调节带隙电压至第二双极晶体管。 p型的第二电流镜连接在第一和第二分支之间，并且连接成使得电流镜相互重复电流。 在产生带隙电压的操作中，电流仅通过所述第一和第二双极衬底晶体管从电源电压流到地。

公开(公告)号：US09071260B2

公开(公告)日：2015-06-30

申请号：US14447050

申请日：2014-07-30

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Chiricosta ,  Calogero Marco Ippolito ,  Mario Maiore ,  Orlando Peluso ,  Michele Vaiana

IPC: H03M1/20 ,  H03M1/06 ,  H03M1/12

CPC classification number: H03M1/0626 ,  H03M1/0639 ,  H03M1/12 ,  H03M1/20

Abstract: An embodiment of a circuit includes an input node, a generator, a combiner, a converter, and a filter. The input node is configured to receive an input signal in a first domain, and the generator is configured to generate a periodic signal in the first domain. The combiner is configured to combine the input and periodic signals into a resulting signal in the first domain, and the converter is configured to convert the resulting signal into a converted signal in a second domain. And the filter is configured to remove from the converted signal substantially all of a frequency component of the converted signal having substantially a same frequency as a frequency component of the periodic signal.

Abstract translation: 电路的实施例包括输入节点，发生器，组合器，转换器和滤波器。 输入节点被配置为在第一域中接收输入信号，并且发生器被配置为在第一域中产生周期性信号。 组合器被配置为将输入和周期信号组合成第一域中的结果信号，并且转换器被配置为将结果信号转换为第二域中的转换信号。 并且滤波器被配置为从转换的信号中移除基本上所有的转换信号的频率分量具有与周期信号的频率分量基本相同的频率。