公开(公告)号：US12170120B2

公开(公告)日：2024-12-17

申请号：US18227545

申请日：2023-07-28

Applicant: STMicroelectronics International N.V.

Inventor： Hitesh Chawla ,  Tanuj Kumar ,  Bhupender Singh ,  Harsh Rawat ,  Kedar Janardan Dhori ,  Manuj Ayodhyawasi ,  Nitin Chawla ,  Promod Kumar

IPC: G11C29/00 ,  G11C29/12 ,  G11C29/36

Abstract: The memory array of a memory includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array column includes a local bit line. A row decoder circuit supports two modes of memory circuit operation: a first mode where only one word line in the memory array is actuated during a memory read and a second mode where one word line per sub-array are simultaneously actuated during the memory read. An input/output circuit for each column includes inputs to the local bit lines of the sub-arrays, a column data output coupled to the bit line inputs, and a sub-array data output coupled to each bit line input. Both BIST and ATPG testing of the input/output circuit are supported. For BIST testing, multiple data paths between the bit line inputs and the column data output are selectively controlled to provide complete circuit testing.

公开(公告)号：US11749343B2

公开(公告)日：2023-09-05

申请号：US17578086

申请日：2022-01-18

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Nitin Chawla ,  Tanmoy Roy ,  Anuj Grover

IPC: G11C13/00 ,  G06F9/50 ,  G11C29/00 ,  G11C29/26 ,  G11C29/44 ,  G06N3/063

CPC classification number: G11C13/004 ,  G06F9/5016 ,  G06N3/063 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0069 ,  G11C29/006 ,  G11C29/26 ,  G11C2029/4402 ,  G11C2211/561

Abstract: A memory management circuit stores information indicative of reliability-types of regions of a memory array. The memory management circuitry responds to a request to allocate memory in the memory array to a process by determining a request type associated with the request to allocate memory. Memory of the memory array is allocated to the process based on the request type associated with the request to allocate memory and the stored information indicative of reliability-types of regions of the memory array. The memory array may be a shared memory array. The memory array may be organized into rows and columns, and the regions of the memory array may be the rows of the memory array.

公开(公告)号：US08994416B2

公开(公告)日：2015-03-31

申请号：US14045642

申请日：2013-10-03

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Chittoor Parthasarathy ,  Nitin Chawla ,  Kallol Chatterjee ,  Pascal Urard

IPC: H03B19/00 ,  H03K3/02 ,  H03K3/037

CPC classification number: H03K3/02 ,  H03K3/0375

Abstract: Adaptive scaling digital techniques attempt to place the system close to the timing failure so as to maximize energy efficiency. Rapid recovery from potential failures is usually by slowing the system clock and/or providing razor solutions (instruction replay.) These techniques compromise the throughput. This application presents a technique to provide local in-situ fault resilience based on dynamic slack borrowing. This technique is non-intrusive (needs no architecture modification) and has minimal impact on throughput.

Abstract translation: 自适应缩放数字技术试图使系统接近定时故障，以最大限度地提高能量效率。 潜在故障的快速恢复通常是通过减慢系统时钟和/或提供剃须刀解决方案（指令重放）。这些技术会损害吞吐量。 该应用提出了一种基于动态松弛借贷提供本地原位故障恢复能力的技术。 这种技术是非侵入式的（不需要架构修改），对吞吐量影响最小。

公开(公告)号：US12176025B2

公开(公告)日：2024-12-24

申请号：US17844955

申请日：2022-06-21

Applicant: STMicroelectronics International N.V.

Inventor： Harsh Rawat ,  Kedar Janardan Dhori ,  Promod Kumar ,  Nitin Chawla ,  Manuj Ayodhyawasi

IPC: G11C11/412 ,  G11C11/418 ,  G11C11/419

Abstract: An in-memory computation circuit includes a memory array with SRAM cells connected in rows by word lines and in columns by bit lines. Body bias nodes of the transistors in each SRAM cell are biased by a modulated body bias voltage. A row controller circuit simultaneously actuates word lines in parallel for an in-memory compute operation. A column processing circuit processes analog voltages developed on the bit lines in response to the simultaneous actuation to generate a decision output for the in-memory compute operation. A voltage generator circuit switches the modulated body bias voltage from a non-negative voltage level to a negative voltage level during the simultaneous actuation. The negative voltage level is adjusted dependent on integrated circuit process and/or temperature conditions in order to optimize protection against unwanted memory cell data flip.

公开(公告)号：US11257543B2

公开(公告)日：2022-02-22

申请号：US16894527

申请日：2020-06-05

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Nitin Chawla ,  Tanmoy Roy ,  Anuj Grover

IPC: G11C13/00 ,  G06F9/50 ,  G06N3/063 ,  G11C29/00 ,  G11C29/26 ,  G11C29/44

Abstract: A memory management circuit stores information indicative of reliability-types of regions of a memory array. The memory management circuitry responds to a request to allocate memory in the memory array to a process by determining a request type associated with the request to allocate memory. Memory of the memory array is allocated to the process based on the request type associated with the request to allocate memory and the stored information indicative of reliability-types of regions of the memory array. The memory array may be a shared memory array. The memory array may be organized into rows and columns, and the regions of the memory array may be the rows of the memory array.

公开(公告)号：US11094376B2

公开(公告)日：2021-08-17

申请号：US16882024

申请日：2020-05-22

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Anuj Grover ,  Tanmoy Roy ,  Nitin Chawla

IPC: G11C11/41 ,  G11C11/419 ,  H01L27/11

Abstract: An in-memory compute (IMC) device includes a compute array having a first plurality of cells. The compute array is arranged as a plurality of rows of cells intersecting a plurality of columns of cells. Each cell of the first plurality of cells is identifiable by its corresponding row and column. The IMC device also includes a plurality of computation engines and a plurality of bias engines. Each computation engine is respectively formed in a different one of a second plurality of cells, wherein the second plurality of cells is formed from cells of the first plurality. Each computation engine is formed at a respective row and column intersection. Each bias engine of the plurality of bias engines is arranged to computationally combine an output from at least one of the plurality of computation engines with a respective bias value.

公开(公告)号：US12243584B2

公开(公告)日：2025-03-04

申请号：US18167580

申请日：2023-02-10

Applicant: STMicroelectronics International N.V.

Inventor： Anuj Grover ,  Tanmoy Roy ,  Nitin Chawla

IPC: G11C11/41 ,  G11C11/419 ,  H10B10/00

Abstract: An in-memory compute (IMC) device includes an array of memory cells and control logic coupled to the array of memory cells. The array of memory cells is arranged as a plurality of rows of cells intersecting a plurality of columns of cells. The array of memory cells includes a first subset of memory cells forming a plurality of computational engines at intersections of rows and columns of the first subset of the array of memory cells. The array also includes a second subset of memory cells forming a plurality of bias engines. The control logic, in operation, generates control signals to control the array of memory cells to perform a plurality of IMC operations using the computational engines, store results of the plurality of IMC operations in memory cells of the array, and computationally combine results of the plurality of IMC operations with respective bias values using the bias engines.

公开(公告)号：US12183424B2

公开(公告)日：2024-12-31

申请号：US17954060

申请日：2022-09-27

Applicant: STMicroelectronics International N.V.

Inventor： Harsh Rawat ,  Kedar Janardan Dhori ,  Promod Kumar ,  Nitin Chawla ,  Manuj Ayodhyawasi

IPC: G11C7/10 ,  G11C7/12

Abstract: A memory array includes a plurality of bit-cells arranged as a set of rows of bit-cells intersecting a plurality of columns. The memory array also includes a plurality of in-memory-compute (IMC) cells arranged as a set of rows of IMC cells intersecting the plurality of columns of the memory array. Each of the IMC cells of the memory array includes a first bit-cell having a latch, a write-bit line and a complementary write-bit line, and a second bit-cell having a latch, a write-bit line and a complementary write-bit line, wherein the write-bit line of the first bit-cell is coupled to the complementary write-bit line of the second bit-cell and the complementary write-bit line of the first bit-cell is coupled to the write-bit line of the second bit-cell.

公开(公告)号：US12087356B2

公开(公告)日：2024-09-10

申请号：US17849903

申请日：2022-06-27

Applicant: STMicroelectronics International N.V.

Inventor： Harsh Rawat ,  Kedar Janardan Dhori ,  Promod Kumar ,  Nitin Chawla ,  Manuj Ayodhyawasi

IPC: G11C11/418

CPC classification number: G11C11/418

Abstract: SRAM cells are connected in columns by bit lines and connected in rows by first and second word lines coupled to first and second data storage sides of the SRAM cells. First the first word lines are actuated in parallel and then next the second word lines are actuated in parallel in first and second phases, respectively, of an in-memory compute operation. Bit line voltages in the first and second phases are processed to generate an in-memory compute operation decision. A low supply node reference voltage for the SRAM cells is selectively modulated between a ground voltage and a negative voltage. The first data storage side receives the negative voltage and the second data storage side receives the ground voltage during the second phase. Conversely, the second data storage side receives the negative voltage and the first data storage side receives the ground voltage during the first phase.

公开(公告)号：US11605424B2

公开(公告)日：2023-03-14

申请号：US17375945

申请日：2021-07-14

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Anuj Grover ,  Tanmoy Roy ,  Nitin Chawla

IPC: G11C11/41 ,  G11C11/419 ,  H01L27/11

Abstract: An in-memory compute (IMC) device includes a compute array having a first plurality of cells. The compute array is arranged as a plurality of rows of cells intersecting a plurality of columns of cells. Each cell of the first plurality of cells is identifiable by its corresponding row and column. The IMC device also includes a plurality of computation engines and a plurality of bias engines. Each computation engine is respectively formed in a different one of a second plurality of cells, wherein the second plurality of cells is formed from cells of the first plurality. Each computation engine is formed at a respective row and column intersection. Each bias engine of the plurality of bias engines is arranged to computationally combine an output from at least one of the plurality of computation engines with a respective bias value.