公开(公告)号：US20210249268A1

公开(公告)日：2021-08-12

申请号：US17244393

申请日：2021-04-29

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo ZANETTI ,  Simone RASCUNA' ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Leonardo FRAGAPANE ,  Cristina TRINGALI

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/872

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20130095624A1

公开(公告)日：2013-04-18

申请号：US13706312

申请日：2012-12-05

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe SAGGIO ,  Edoardo ZANETTI ,  Ferruccio FRISINA

IPC: H01L29/66

CPC classification number: H01L29/7811 ,  H01L21/0485 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7802

Abstract: An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type. The process comprises the steps of: forming, on the semiconductor body, a first mask having a first window and a second window above a first surface portion and a second surface portion of the semiconductor body; forming, within the first and second surface portions of the semiconductor body underneath the first and second windows, at least one first conductive region and one second conductive region having a second conductivity type, the first conductive region and the second conductive region facing one another; forming a second mask on the semiconductor body, the second mask having a plurality of windows above surface portions of the first conductive region and the second conductive region; forming, within the first conductive region and the second conductive region and underneath the plurality of windows, a plurality of third conductive regions having the first conductivity type; removing completely the first and second masks; performing an activation thermal process of the first, second, and third conductive regions at a high temperature; and forming body and source regions.

Abstract translation: 一种用于制造具有第一导电类型的具有宽禁带隙的材料的半导体本体上的电子器件的方法的实施例。 该方法包括以下步骤：在半导体本体上形成第一掩模，该第一掩模在半导体本体的第一表面部分和第二表面部分之上具有第一窗口和第二窗口; 在第一和第二窗口下面的半导体本体的第一和第二表面部分内形成具有第二导电类型的至少一个第一导电区域和一个第二导电区域，第一导电区域和第二导电区域彼此面对; 在所述半导体主体上形成第二掩模，所述第二掩模在所述第一导电区域和所述第二导电区域的表面部分上方具有多个窗口; 在所述第一导电区域和所述第二导电区域内以及所述多个窗口下方形成具有所述第一导电类型的多个第三导电区域; 彻底清除第一和第二个面罩; 在高温下进行第一，第二和第三导电区域的激活热处理; 并形成体和源区。

公开(公告)号：US20240079455A1

公开(公告)日：2024-03-07

申请号：US18364180

申请日：2023-08-02

Applicant: STMicroelectronics S.r.l.

Inventor： Patrick FIORENZA ,  Fabrizio ROCCAFORTE ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/16 ,  H01L29/51 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/511 ,  H01L29/66068 ,  H01L29/872

Abstract: Electronic device comprising: a semiconductor body, in particular of Silicon Carbide, SiC, having a first and a second face, opposite to each other along a first direction; and an electrical terminal at the first face, insulated from the semiconductor body by an electrical insulation region. The electrical insulation region is a multilayer comprising: a first insulating layer, of a Silicon Oxide, in contact with the semiconductor body; a second insulating layer on the first insulating layer, of a Hafnium Oxide; and a third insulating layer on the second insulating layer, of an Aluminum Oxide.

公开(公告)号：US20230099610A1

公开(公告)日：2023-03-30

申请号：US18061795

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo ZANETTI ,  Simone RASCUNA' ,  Mario Giuseppe SAGGIO ,  Alfio GUARNERA ,  Leonardo FRAGAPANE ,  Cristina TRINGALI

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US20220246771A1

公开(公告)日：2022-08-04

申请号：US17592322

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

Abstract: A vertical conduction electronic device is formed by a body of wide-bandgap semiconductor material having a first conductivity type and a surface, which defines a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of superficial implanted regions having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion facing the surface. At least one deep implanted region has the second conductivity type, and extends in the drift region, at a distance from the surface of the body. A metal region extends on the surface of the body, in Schottky contact with the superficial portion of the drift region.

公开(公告)号：US20220157989A1

公开(公告)日：2022-05-19

申请号：US17665398

申请日：2022-02-04

Applicant: STMicroelectronics S.r.l.

Inventor： Mario Giuseppe SAGGIO ,  Edoardo ZANETTI

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10

Abstract: A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.