公开(公告)号：US20250038060A1

公开(公告)日：2025-01-30

申请号：US18917464

申请日：2024-10-16

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L21/04 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US20240079237A1

公开(公告)日：2024-03-07

申请号：US18363349

申请日：2023-08-01

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Mario Giuseppe SAGGIO ,  Cateno Marco CAMALLERI ,  Gabriele BELLOCCHI ,  Simone RASCUNA'

IPC: H01L21/04 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/0485 ,  H01L29/401 ,  H01L29/66068

Abstract: Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

公开(公告)号：US20230170271A1

公开(公告)日：2023-06-01

申请号：US18056104

申请日：2022-11-16

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Valeria PUGLISI ,  Gabriele BELLOCCHI ,  Simone RASCUNA'

IPC: H01L23/31 ,  H01L29/16 ,  H01L21/04

CPC classification number: H01L23/3178 ,  H01L29/1608 ,  H01L21/045

Abstract: An electronic device, comprising: a semiconductor body of silicon carbide; an insulating layer on a surface of the semiconductor body; a layer of metal material extending in part on the surface of the semiconductor body and in part on the insulating layer; a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer on the interface layer; and an anchoring element that protrudes from the passivation layer towards the first insulating layer and extends in the first insulating layer underneath the interface layer.

公开(公告)号：US20230092543A1

公开(公告)日：2023-03-23

申请号：US18052510

申请日：2022-11-03

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L21/04 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US20230087112A1

公开(公告)日：2023-03-23

申请号：US17939842

申请日：2022-09-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Filippo GIANNAZZO ,  Giuseppe Greco ,  Fabrizio ROCCAFORTE ,  Simone RASCUNA'

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/45 ,  H01L29/868 ,  H01L29/872 ,  H01L21/04

Abstract: Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.

公开(公告)号：US20210280424A1

公开(公告)日：2021-09-09

申请号：US17190722

申请日：2021-03-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Mario Giuseppe SAGGIO ,  Giovanni FRANCO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

公开(公告)号：US20210104445A1

公开(公告)日：2021-04-08

申请号：US17039289

申请日：2020-09-30

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L29/16 ,  H01L21/04 ,  H01L21/56

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US20240178280A1

公开(公告)日：2024-05-30

申请号：US18532975

申请日：2023-12-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Mario Giuseppe SAGGIO

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/872

Abstract: Merged-PiN-Schottky, MPS, device comprising: a substrate of SiC with a first conductivity; a drift layer of SiC with the first conductivity, on the substrate; an implanted region with a second conductivity, extending at a top surface of the drift layer to form a junction-barrier, JB, diode with the substrate; and a first electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer. The JB diode and the Schottky diode are alternated to each other along an axis: the JB diode has a minimum width parallel to the axis with a first value, and the Schottky diode has a maximum width parallel to the axis with a second value smaller than, or equal to, the first value. A breakdown voltage of the MPS device is greater than, or equal to, 115% of a maximum working voltage of the MPS device in an inhibition state.

公开(公告)号：US20230343831A1

公开(公告)日：2023-10-26

申请号：US18309584

申请日：2023-04-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US20230299148A1

公开(公告)日：2023-09-21

申请号：US18183866

申请日：2023-03-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Fabrizio ROCCAFORTE ,  Gabriele BELLOCCHI ,  Marilena VIVONA

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/872 ,  H01L29/66143 ,  H01L29/45

Abstract: A method for manufacturing an electronic device includes forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.