公开(公告)号：US11038047B2

公开(公告)日：2021-06-15

申请号：US16738935

申请日：2020-01-09

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Giuseppe Greco ,  Fabrizio Roccaforte

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L23/29 ,  H01L23/31 ,  H01L29/737 ,  H01L29/207 ,  H01L29/417

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

公开(公告)号：US20230087112A1

公开(公告)日：2023-03-23

申请号：US17939842

申请日：2022-09-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Filippo GIANNAZZO ,  Giuseppe Greco ,  Fabrizio ROCCAFORTE ,  Simone RASCUNA'

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/45 ,  H01L29/868 ,  H01L29/872 ,  H01L21/04

Abstract: Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.

公开(公告)号：US20230246100A1

公开(公告)日：2023-08-03

申请号：US18158986

申请日：2023-01-24

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando IUCOLANO ,  Filippo GIANNAZZO ,  Giuseppe Greco ,  Fabrizio ROCCAFORTE

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/3205

CPC classification number: H01L29/7786 ,  H01L29/66431 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/42316 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/0272 ,  H01L21/28506 ,  H01L21/3086 ,  H01L21/3081 ,  H01L21/3065 ,  H01L21/32051

Abstract: An enhancement mode high electron-mobility transistor (HEMT) device includes a semiconductor body having a top surface and including a heterostructure configured to generate a two-dimensional electron gas, 2DEG. The HEMT device includes a gate structure which extends on the top surface of the semiconductor body, is biasable to electrically control the 2DEG and includes a functional layer and a gate contact in direct physical and electrical contact with each other. The gate contact is of conductive material and the functional layer is of two-dimensional semiconductor material and includes a first doped portion with P-type electrical conductivity, which extends on the top surface of the semiconductor body and is interposed between the semiconductor body and the gate contact along a first axis.

公开(公告)号：US11699748B2

公开(公告)日：2023-07-11

申请号：US17322528

申请日：2021-05-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Giuseppe Greco ,  Fabrizio Roccaforte

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L23/29 ,  H01L23/31 ,  H01L29/737 ,  H01L29/207 ,  H01L29/417

CPC classification number: H01L29/7786 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/1087 ,  H01L29/207 ,  H01L29/41766 ,  H01L29/7378

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

公开(公告)号：US20230246088A1

公开(公告)日：2023-08-03

申请号：US18156976

申请日：2023-01-19

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando IUCOLANO ,  Giuseppe Greco ,  Paolo BADALA' ,  Fabrizio ROCCAFORTE ,  Monia SPERA

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A process for manufacturing a HEMT device includes forming a conductive region on a work body having a semiconductive heterostructure. To obtain the conductive region, a first reaction region having carbon is formed on the heterostructure and a metal stack is formed having a second reaction region in contact with the first reaction region. The work body is annealed, so that the first reaction region reacts with the second reaction region, thus forming an interface portion of the conductive region. The interface portion is of a compound having carbon and is in ohmic contact with the semiconductive hetero structure.

公开(公告)号：US10566450B2

公开(公告)日：2020-02-18

申请号：US16004272

申请日：2018-06-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Giuseppe Greco ,  Fabrizio Roccaforte

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L23/29 ,  H01L23/31 ,  H01L29/737 ,  H01L29/417 ,  H01L29/207

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.