公开(公告)号：US20240063290A1

公开(公告)日：2024-02-22

申请号：US18383926

申请日：2023-10-26

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/732

CPC classification number: H01L29/66272 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/732 ,  H01L21/26513

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.

公开(公告)号：US20220254879A1

公开(公告)日：2022-08-11

申请号：US17734486

申请日：2022-05-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US20210057520A1

公开(公告)日：2021-02-25

申请号：US16995054

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US20190148531A1

公开(公告)日：2019-05-16

申请号：US16250182

申请日：2019-01-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/732 ,  H01L21/3105 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7322 ,  H01L21/31056 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/737

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

公开(公告)号：US20230128033A1

公开(公告)日：2023-04-27

申请号：US17964350

申请日：2022-10-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Julien BORREL ,  Alexis GAUTHIER ,  Fanny HILARIO ,  Ludovic BERTHIER ,  Paul DUMAS ,  Edoardo BREZZA

IPC: H01L21/266 ,  H01L29/06

Abstract: According to one aspect provision is made of a method for ion implantation in a semiconductor wafer placed in an implantation chamber under vacuum, the semiconductor wafer having an integrated circuit area and a peripheral area around this integrated circuit area, the ion implantation allowing to apply a doping in regions, called implantation regions, of the integrated circuit area, the method comprising: forming a photosensitive resin coating serving as a mask on the semiconductor wafer, then forming openings in the photosensitive resin coating at said implantation regions of the integrated circuit area and at least at one region of the peripheral area, then implanting ions in the semiconductor wafer.

公开(公告)号：US20220254686A1

公开(公告)日：2022-08-11

申请号：US17728088

申请日：2022-04-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gregory AVENIER ,  Alexis GAUTHIER ,  Pascal CHEVALIER

IPC: H01L21/8222 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93 ,  H01L21/3105 ,  H01L21/8249

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

公开(公告)号：US20220059672A1

公开(公告)日：2022-02-24

申请号：US17401881

申请日：2021-08-13

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Edoardo BREZZA ,  Pascal CHEVALIER

IPC: H01L29/66 ,  H01L21/762 ,  H01L29/08 ,  H01L29/732

Abstract: A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.

公开(公告)号：US20220013654A1

公开(公告)日：2022-01-13

申请号：US17486000

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER

IPC: H01L29/66 ,  H01L21/22 ,  H01L29/06 ,  H01L29/73

Abstract: A bipolar transistor includes a collector. The collector is produced by a process wherein a first substantially homogeneously doped layer is formed at the bottom of a cavity. A second gradually doped layer is then formed by diffusion of dopants of the first substantially homogeneously doped layer.

公开(公告)号：US20210273052A1

公开(公告)日：2021-09-02

申请号：US17323170

申请日：2021-05-18

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Julien BORREL

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/167 ,  H01L29/66 ,  H01L29/737 ,  H01L29/732

Abstract: A bipolar junction transistor includes an extrinsic collector region buried in a semiconductor substrate under an intrinsic collector region. Carbon-containing passivating regions are provided to delimit the intrinsic collector region. An insulating layer on the intrinsic collector region includes an opening within which an extrinsic base region is provided. A semiconductor layer overlies the insulating layer, is in contact with the extrinsic base region, and includes an opening with insulated sidewalls. The collector region of the transistor is provided between the insulated sidewalls.