Electronic device with short circuit protection element, fabrication method and design method

    公开(公告)号:US10818593B2

    公开(公告)日:2020-10-27

    申请号:US16389866

    申请日:2019-04-19

    Abstract: An electronic device includes: a control terminal, which extends on a first face of a substrate; a first conduction terminal, which extends in the substrate at the first face of the substrate; a first insulating layer interposed between the control terminal and the first conduction terminal; a conductive path, which can be biased at a biasing voltage; and a protection element, coupled to the control terminal and to the conductive path, which forms an electrical connection between the control terminal and the conductive path and is designed to melt, and thus interrupt electrical connection, in the presence of a leakage current higher than a critical threshold between the control terminal and the first conduction terminal through the first insulating layer.

    Oscillation frequency measuring system and method for a MEMS sensor

    公开(公告)号:US10479674B2

    公开(公告)日:2019-11-19

    申请号:US15639203

    申请日:2017-06-30

    Abstract: A MEMS sensor has at least a movable element designed to oscillate at an oscillation frequency, and an integrated measuring system coupled to the movable element to provide a measure of the oscillation frequency. The measuring system has a light source to emit a light beam towards the movable element and a light detector to receive the light beam reflected back from the movable element, including a semiconductor photodiode array. In particular, the light detector is an integrated photomultiplier having an array of single photon avalanche diodes.

    Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions
    13.
    发明授权
    Proximity sensor having array of geiger mode avalanche photodiodes for estimating distance of an object to the array based on at least one of a dark current and a rate of current spikes generated in dark conditions 有权
    接近传感器具有阵列的盖格模式雪崩光电二极管,用于基于暗电流和在黑暗条件下产生的电流尖峰率中的至少一种来估计物体与阵列的距离

    公开(公告)号:US09411049B2

    公开(公告)日:2016-08-09

    申请号:US14146175

    申请日:2014-01-02

    CPC classification number: G01S17/026 G01J1/44 G01S17/08

    Abstract: A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing an estimated distance of an object from the array upon the sensing.

    Abstract translation: 接近传感器可以包括Geiger模式雪崩光电二极管阵列,每个包括阳极接触和阴极接触。 公共阴极接触件可以耦合到阵列的阴极触点,以在阵列的背面限定第一连接引线。 公共阳极集电栅极触点可以耦合到阵列的阳极触点以限定阵列的第二连接引线。 电路可以与第一和第二连接引线耦合并且被配置为感测暗电流和在黑暗条件下产生的电流尖峰的速率中的至少一个,并且产生表示物体在阵列上的估计距离的输出信号 感应。

    Electronic device with short circuit protection element, fabrication method and design method

    公开(公告)号:US11469177B2

    公开(公告)日:2022-10-11

    申请号:US17036312

    申请日:2020-09-29

    Abstract: An electronic device includes: a control terminal, which extends on a first face of a substrate; a first conduction terminal, which extends in the substrate at the first face of the substrate; a first insulating layer interposed between the control terminal and the first conduction terminal; a conductive path, which can be biased at a biasing voltage; and a protection element, coupled to the control terminal and to the conductive path, which forms an electrical connection between the control terminal and the conductive path and is designed to melt, and thus interrupt electrical connection, in the presence of a leakage current higher than a critical threshold between the control terminal and the first conduction terminal through the first insulating layer.

    Photodetector with integrated microfluidic channel and manufacturing process thereof
    17.
    发明授权
    Photodetector with integrated microfluidic channel and manufacturing process thereof 有权
    具有集成微流体通道的光电检测器及其制造方法

    公开(公告)号:US09349904B2

    公开(公告)日:2016-05-24

    申请号:US13925577

    申请日:2013-06-24

    Abstract: A photodetector including: a photodiode having a body made of semiconductor material delimited by a first surface, the body forming a first electrode region; a dielectric region, set on top of the first surface and delimited by a second surface; at least one channel extending within the dielectric region, starting from the second surface; and a first metallization, which is set on top of the second surface and is in electrical contact with the first electrode region.

    Abstract translation: 一种光检测器,包括:光电二极管,具有由第一表面限定的半导体材料制成的主体,所述主体形成第一电极区; 介电区域,设置在第一表面的顶部并由第二表面限定; 从所述第二表面开始的至少一个在所述电介质区域内延伸的通道; 以及第一金属化,其被设置在第二表面的顶部并与第一电极区域电接触。

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