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11.发明授权公开(公告)号：US11673799B2
公开(公告)日：2023-06-13
申请号：US17155429
申请日：2021-01-22
Applicant: STMicroelectronics S.r.l.
Inventor： Enri Duqi , Nicolo′ Boni , Lorenzo Baldo , Massimiliano Merli , Roberto Carminati
CPC classification number: B81C1/00158 , H01L41/35 , B81C2201/013
Abstract: To manufacture an oscillating structure, a wafer is processed by: forming torsional elastic elements; forming a mobile element connected to the torsional elastic elements; processing the first side of the wafer to form a mechanical reinforcement structure; and processing the second side of said wafer by steps of chemical etching, deposition of metal material, and/or deposition of piezoelectric material. Processing of the first side of the wafer is carried out prior to processing of the second side of the wafer so as not to damage possible sensitive structures formed on the first side of the wafer.
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12.发明授权公开(公告)号：US11555554B2
公开(公告)日：2023-01-17
申请号：US16842474
申请日：2020-04-07
Applicant: STMicroelectronics S.r.l.
Inventor： Enri Duqi , Lorenzo Baldo
Abstract: A microfluidic valve formed in a body having a first and a second surface; an inlet channel extending in the body from the second surface; a first transverse channel extending in the body in a transverse direction with respect to the inlet channel; and an outlet channel extending in the body from the first surface. The inlet channel, the first transverse channel and the outlet channel form a fluidic path. The microfluidic valve further has an occluding portion, formed by the body and extending over the transverse channel; and a piezoelectric actuator coupled to the occluding portion and configured to move the occluding portion from an opening position of the valve, where the occluding portion does not interfere with the fluidic path, and a closing position of the valve, where the occluding portion interferes with and interrupts the fluidic path.
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公开(公告)号：US11418888B2
公开(公告)日：2022-08-16
申请号：US16749579
申请日：2020-01-22
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Fabrizio Cerini , Enri Duqi , Silvia Adorno , Lorenzo Baldo
Abstract: An actuation structure of a MEMS electroacoustic transducer is formed in a die of semiconductor material having a monolithic body with a front surface and a rear surface extending in a horizontal plane x-y plane and defined in which are: a frame; an actuator element arranged in a central opening defined by the frame; cantilever elements, coupled at the front surface between the actuator element and the frame; and piezoelectric regions arranged on the cantilever elements and configured to be biased to cause a deformation of the cantilever elements by the piezoelectric effect. A first stopper arrangement is integrated in the die and configured to interact with the cantilever elements to limit a movement thereof in a first direction of a vertical axis orthogonal to the horizontal plane, x-y plane towards the underlying central opening.
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公开(公告)号：US20200024132A1
公开(公告)日：2020-01-23
申请号：US16207035
申请日：2018-11-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Lorenzo Baldo , Enri Duqi , Flavio Francesco Villa
Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
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15.发明申请公开(公告)号：US20190219468A1
公开(公告)日：2019-07-18
申请号：US16248415
申请日：2019-01-15
Applicant: STMicroelectronics S.r.l.
Inventor： Enri Duqi , Lorenzo Baldo
CPC classification number: G01L27/002 , G01L9/0054 , G01L27/007
Abstract: A microelectromechanical pressure sensor includes a monolithic body of semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezoresistive type are arranged in the sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic body to cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure.
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Patent Agency Ranking
公开(公告)号：US10150666B2
公开(公告)日：2018-12-11
申请号：US15602760
申请日：2017-05-23
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Lorenzo Baldo , Enri Duqi , Flavio Francesco Villa
Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.
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17.发明授权Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology 有权用MEMS技术制造的半导体材料的集成三轴磁力计公开(公告)号：US08760156B2
公开(公告)日：2014-06-24
申请号：US13905006
申请日：2013-05-29
Applicant: STMicroelectronics S.r.l.
Inventor： Lorenzo Baldo , Francesco Procopio , Sarah Zerbini
IPC: G01R33/02
CPC classification number: G01R33/0286 , G01R33/0005 , G01R33/028 , G01R33/038
Abstract: Two suspended masses are configured so as to be flowed by respective currents flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes. Mobile sensing electrodes are carried by the first suspended mass and are capacitively coupled to respective fixed sensing electrodes. The first suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction. The second suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction, and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction.
Abstract translation: 两个悬挂质量被配置为使得在相互横向上在磁力计平面中流动的相应电流流动，并且电容耦合到下电极。 移动感测电极由第一悬浮质量携带并且电容耦合到相应的固定感测电极。 第一悬挂质量被配置为在存在具有在第一水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的。 第二悬挂质量被配置为在存在具有在第二水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的，并且第一悬挂质量被配置为在平行于 并且在存在具有在垂直方向上的分量的磁场的情况下横向于在第一悬浮质量块中流动的电流。
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公开(公告)号：US11873215B2
公开(公告)日：2024-01-16
申请号：US17684317
申请日：2022-03-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Enri Duqi , Marco Del Sarto , Lorenzo Baldo
CPC classification number: B81C1/00325 , B81B3/0018 , B81C99/0005 , B81C2201/112
Abstract: A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.
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19.发明授权公开(公告)号：US11560886B2
公开(公告)日：2023-01-24
申请号：US16847521
申请日：2020-04-13
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Domenico Giusti , Lorenzo Baldo , Enri Duqi
IPC: F04B43/04 , H01L27/20 , H01L41/047 , H01L41/09 , H01L41/31 , F04B43/02 , F04B45/047
Abstract: A micropump device is formed in a monolithic semiconductor body integrating a plurality of actuator elements arranged side-by-side. Each actuator element has a first chamber extending at a distance from a first face of the monolithic body; a membrane arranged between the first face and the first chamber; a piezoelectric element extending on the first face over the membrane; a second chamber, arranged between the first chamber and a second face of the monolithic body; a fluidic inlet path fluidically connecting the second chamber with the outside of the monolithic body; and a fluid outlet opening extending in a transverse direction in the monolithic body from the second face as far as the second chamber, through the first chamber. The monolithic formation of the actuator elements and the possibility of driving the actuator elements at different voltages enable precise adjustment of flows, from very low values to high values.
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20.发明授权公开(公告)号：US11358862B2
公开(公告)日：2022-06-14
申请号：US16869159
申请日：2020-05-07
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Enri Duqi , Lorenzo Baldo , Marco Del Sarto , Mikel Azpeitia Urquia
Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.
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