公开(公告)号：US11626492B2

公开(公告)日：2023-04-11

申请号：US17432342

申请日：2020-02-07

申请人： SUMCO CORPORATION

发明人： Akihiro Suzuki ,  Takeshi Kadono ,  Ryo Hirose

IPC分类号： H01L21/265 ,  H01L29/36

摘要： Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing carbon, hydrogen, and nitrogen as constituent elements to form a modified layer that is located in a surface portion of the semiconductor wafer and contains the constituent elements of the cluster ions as a solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer.

公开(公告)号：US20170077171A1

公开(公告)日：2017-03-16

申请号：US15274790

申请日：2016-09-23

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322

CPC分类号： H01L27/14698 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/36

摘要： The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

摘要翻译： 根据本发明的制造半导体外延晶片100的方法包括：第一步骤，用聚簇离子16照射半导体晶片10，以形成由簇离子16的构成元素形成的改性层18，该修饰层18在表面部分10A的 半导体晶片; 以及在半导体晶片10的改性层18上形成外延层20的第二步骤。

公开(公告)号：US09576800B2

公开(公告)日：2017-02-21

申请号：US15182443

申请日：2016-06-14

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L27/146 ,  H01L21/322

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

摘要翻译： 提供了一种外延硅晶片，其由位错簇引起的外延缺陷和通过较高的吸杂能力实现的具有减少的金属污染的COP和一种制造外延晶片的方法。 一种外延硅晶片的制造方法，其特征在于，包括：第一工序，在硅晶片的表面部照射不含位错簇的硅晶片和具有簇离子的COP，形成由所述簇离子的构成元素形成的改性层; 以及在硅晶片的改性层上形成外延层的第二步骤。

公开(公告)号：US20140134779A1

公开(公告)日：2014-05-15

申请号：US14078217

申请日：2013-11-12

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L21/02 ,  H01L27/146 ,  H01L29/36

CPC分类号： H01L21/26566 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/3221 ,  H01L21/3225 ,  H01L27/14687

摘要： Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer.A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

摘要翻译： 提供了一种外延硅晶片，其由位错簇引起的外延缺陷和通过较高的吸杂能力实现的具有减少的金属污染的COP和一种制造外延晶片的方法。 一种外延硅晶片的制造方法，其特征在于，包括：第一工序，在硅晶片的表面部照射不含位错簇的硅晶片和具有簇离子的COP，形成由所述簇离子的构成元素形成的改性层; 以及在硅晶片的改性层上形成外延层的第二步骤。

公开(公告)号：US11245014B2

公开(公告)日：2022-02-08

申请号：US16956232

申请日：2018-08-24

申请人： SUMCO CORPORATION

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L29/36 ,  H01L21/02 ,  H01L21/265 ,  H01L31/18 ,  H01L27/146

摘要： Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of CnHm (n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.

公开(公告)号：US10062569B2

公开(公告)日：2018-08-28

申请号：US15104692

申请日：2014-12-10

申请人： SUMCO CORPORATION

发明人： Takuro Iwanaga ,  Kazunari Kurita ,  Takeshi Kadono

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/36

CPC分类号： H01L21/02658 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26506 ,  H01L21/26566 ,  H01L21/3221 ,  H01L29/36

摘要： Provided is a method of manufacturing an epitaxial wafer having an excellent gettering capability while suppressing formation of epitaxial defects. The method includes: a cluster ion irradiation step of irradiating a surface of a silicon wafer having a resistivity of from 0.001 Ω·cm to 0.1 Ω·cm with cluster ions containing at least carbon at a dose of from 2.0×1014/cm2 to 1.0×1016/cm2 to form, on a surface portion of the silicon wafer, a modifying layer composed of a constituent element of the cluster ions in the form of a solid solution; and an epitaxial layer forming step of forming, on the modifying layer on the silicon wafer, an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer.

公开(公告)号：US09847370B2

公开(公告)日：2017-12-19

申请号：US15274790

申请日：2016-09-23

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/36

CPC分类号： H01L27/14698 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/36

摘要： The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

公开(公告)号：US09397172B2

公开(公告)日：2016-07-19

申请号：US14799435

申请日：2015-07-14

申请人： SUMCO Corporation

发明人： Takeshi Kadono

IPC分类号： H01L29/36 ,  H01L21/02 ,  H01L27/146 ,  H01L29/167

CPC分类号： H01L29/36 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L27/14687 ,  H01L29/167

摘要： Provided is a semiconductor epitaxial wafer with reduced metal contamination achieved by higher gettering capability. The semiconductor epitaxial wafer includes a silicon wafer including COPs; a modifying layer formed from a certain element in the silicon wafer, in a surface portion of the silicon wafer; and an epitaxial layer on the modifying layer, wherein the full width half maximum of a concentration profile of the certain element in the depth direction of the modifying layer is 100 nm or less.

摘要翻译： 提供了通过更高的吸气能力实现的具有减少的金属污染的半导体外延晶片。 半导体外延晶片包括包括COP的硅晶片; 在硅晶片的表面部分中由硅晶片中的某个元件形成的改性层; 以及所述改性层上的外延层，其中所述特定元素在所述改性层的深度方向上的浓度分布的全宽度半值最大值为100nm以下。

公开(公告)号：US20160181313A1

公开(公告)日：2016-06-23

申请号：US14442373

申请日：2013-11-11

申请人： Sumco Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322 ,  H01L29/36 ,  H01L21/02 ,  H01L21/265 ,  H01L29/167

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/14689 ,  H01L29/167 ,  H01L29/36

摘要： Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

摘要翻译： 提供了通过实现更高的吸杂能力而减少金属污染的半导体外延晶片，制造半导体外延晶片的方法以及使用该半导体外延晶片的固态图像感测装置的制造方法。 制造半导体外延晶片100的方法包括：第一步骤，将含有碳和氮的至少一个的半导体晶片10照射到簇离子16，从而形成由包含的簇离子16的构成元素形成的改性层18 固溶体，在半导体晶片10的表面部分中; 以及在半导体晶片10的改性层18上形成第一外延层20的第二步骤。

公开(公告)号：US20160181312A1

公开(公告)日：2016-06-23

申请号：US14442367

申请日：2013-11-12

申请人： Sumco Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L27/14687 ,  C23C16/0209 ,  C23C16/0263 ,  C23C16/24 ,  C30B25/20 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/3221 ,  H01L27/14683 ,  H01L27/14689

摘要： An object is to provide a method of producing a semiconductor epitaxial wafer having higher gettering capability and a reduced haze level of the surface of a semiconductor epitaxial layer.The method of producing a semiconductor epitaxial wafer, according to the present invention includes: a first step of irradiating a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion 10A of the semiconductor wafer; a second step of performing heat treatment for crystallinity recovery on the semiconductor wafer 10 after the first step such that the haze level of the semiconductor wafer surface portion 10A is 0.20 ppm or less; and a third step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer after the second step.

摘要翻译： 本发明的目的是提供一种制造具有较高吸杂能力和半导体外延层的表面的较低雾度水平的半导体外延晶片的方法。 根据本发明的制造半导体外延晶片的方法包括：第一步骤，用聚簇离子16照射半导体晶片10，从而形成由作为固溶体的簇离子16的构成元素形成的改性层18 在半导体晶片的表面部分10A中; 在第一步骤之后对半导体晶片10进行结晶度恢复的热处理使得半导体晶片表面部分10A的雾度水平为0.20ppm以下的第二步骤; 以及在第二步骤之后在半导体晶片的改性层18上形成外延层20的第三步骤。