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    Quantum cascade laser
    13.
    发明授权
    Quantum cascade laser 有权
    量子级联激光器

    公开(公告)号：US09184567B2

    公开(公告)日：2015-11-10

    申请号：US13738179

    申请日：2013-01-10

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Jun-ichi Hashimoto ,  Takashi Kato ,  Hiroshi Inada

    IPC: H01S5/30 ,  H01S5/343 ,  H01S5/20 ,  H01S5/227 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/024 ,  H01S5/32 ,  H01S5/22

    CPC classification number: H01S5/343 ,  B82Y20/00 ,  H01S5/02461 ,  H01S5/2031 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/3402

    Abstract: A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material.

    Abstract translation: 量子级联激光器包括具有导电类型的衬底，具有第一区域，第二区域和第三区域的衬底; 设置在所述基板的主表面上的半导体层叠体，所述半导体层叠体包括设置在所述第二区域上的台面条状部分，具有与所述基板相同的导电类型的上部包覆层，第一埋入层和第二埋入层， 所述台面条状部分包括芯层; 以及设置在半导体层叠体上的电极。 第一和第二掩埋层设置在台面条状部分的第一和第三区域以及两个侧面上。 上包层设置在台面条状部分，第一掩埋层和第二掩埋层上。 第一和第二掩埋层包括由半绝缘半导体材料构成的第一和第二半绝缘半导体区域。

    Mach-Zehnder interferometer type optical modulator
    14.
    发明授权
    Mach-Zehnder interferometer type optical modulator 有权
    马赫 - 曾德干涉仪型光调制器

    公开(公告)号：US09146442B2

    公开(公告)日：2015-09-29

    申请号：US14481498

    申请日：2014-09-09

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Jun-ichi Hashimoto

    IPC: G02F1/035 ,  G02F1/225 ,  G02F1/21

    CPC classification number: G02F1/225 ,  G02F1/035 ,  G02F2001/212 ,  G02F2201/17 ,  G02F2201/34

    Abstract: A Mach-Zehnder interferometer type optical modulator includes a first end facet and a reflecting portion opposing the first end facet; a single optical coupler including input and output ports, the optical coupler being disposed between the first end facet and the reflecting portion; first and second optical waveguides that are connected to the input ports of the optical coupler; third and fourth optical waveguides that are connected to the output ports of the optical coupler; and a phase shifting section disposed between the optical coupler and the reflecting portion. The phase shifting section includes a first optical waveguide structure constituting part of the third optical waveguide; a first upper electrode on the first optical waveguide structure; a second optical waveguide structure constituting part of the fourth optical waveguide; and a second upper electrode on the second optical waveguide structure.

    Abstract translation: 马赫 - 曾德干涉仪型光调制器包括第一端面和与第一端面相对的反射部分; 包括输入和输出端口的单个光耦合器，所述光耦合器设置在所述第一端面与所述反射部分之间; 第一和第二光波导，其连接到光耦合器的输入端口; 第三和第四光波导，其连接到光耦合器的输出端口; 以及设置在光耦合器和反射部分之间的相移部分。 相移部分包括构成第三光波导的一部分的第一光波导结构; 第一光波导结构上的第一上电极; 构成第四光波导的一部分的第二光波导结构; 和在第二光波导结构上的第二上电极。

    Quantum cascade semiconductor laser
    15.
    发明授权
    Quantum cascade semiconductor laser 有权
    量子级联半导体激光器

    公开(公告)号：US08804785B2

    公开(公告)日：2014-08-12

    申请号：US13907059

    申请日：2013-05-31

    Applicant: Sumitomo Electric Industries, Ltd.

    Inventor： Jun-ichi Hashimoto ,  Takashi Kato ,  Hiroshi Inada ,  Michio Murata

    IPC: H01S5/00

    CPC classification number: H01S5/3401 ,  B82Y20/00 ,  H01S5/0655 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/227 ,  H01S5/3402

    Abstract: A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor.

    Abstract translation: 量子级联半导体激光器包括n型半导体衬底，该衬底具有主表面; 设置在所述基板上的台面波导，所述台面波导包括芯层和设置在所述芯层上的n型上包层; 设置在所述台面波导的侧面和所述基板的主面的第一半导体层，所述第一半导体层与所述台面波导的侧面接触; 以及设置在第一半导体层上的第二半导体层。 第一半导体层和第二半导体层构成嵌入台面波导的侧面的掩埋区域。 第一半导体层由半绝缘半导体和p型半导体中的至少一个形成。 此外，第二半导体层由n型半导体形成。

    Quantum cascade laser
    16.
    发明授权
    Quantum cascade laser 有权

    公开(公告)号：US11621541B2

    公开(公告)日：2023-04-04

    申请号：US17086640

    申请日：2020-11-02

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Hiroyuki Yoshinaga ,  Jun-ichi Hashimoto ,  Masato Furukawa

    IPC: H01S5/34 ,  H01S5/026 ,  H01S5/028 ,  H01S5/30

    Abstract: A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

    Quantum cascade laser
    17.
    发明授权
    Quantum cascade laser 有权

    公开(公告)号：US11121525B2

    公开(公告)日：2021-09-14

    申请号：US16584973

    申请日：2019-09-27

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Jun-ichi Hashimoto

    IPC: H01S5/34 ,  H01S5/227 ,  H01S5/028 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/024 ,  H01S5/02

    Abstract: A quantum cascade laser including: a laser structure having a first region including a first facet, a second region including a second facet, an epitaxial surface, and a substrate surface; an insulating film disposed on the second facet and the epitaxial surface; an electrode disposed on the epitaxial surface and the insulating film and in contact with the epitaxial surface; and a metal film disposed over the second facet and the epitaxial surface and separated from the electrode and the substrate surface. The insulating film is disposed between the metal film and the second facet and between the metal film and the epitaxial surface. The second region includes a semiconductor mesa. The second facet is located at a boundary between the first region and the second region. The first region includes a connecting surface. The connecting surface connects the second facet to the first facet.

    Quantum cascade laser, light emitting apparatus
    18.
    发明授权
    Quantum cascade laser, light emitting apparatus 有权

    公开(公告)号：US10608412B2

    公开(公告)日：2020-03-31

    申请号：US16009044

    申请日：2018-06-14

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Jun-ichi Hashimoto

    IPC: H01S5/34 ,  H01S5/026 ,  H01S5/024 ,  H01S5/042 ,  H01S5/022 ,  H01S5/22 ,  H01S5/028 ,  H01S5/227 ,  H01S5/02 ,  H01S5/12

    Abstract: A light emitting apparatus includes: a submount including a mounting face and an end face, and the end face having an upper edge apart from a front edge of the mounting face; and a quantum cascade laser disposed on the front edge and the mounting face. The quantum cascade laser includes: a laser structure having first, and second faces; a first electrode on the first face; a second electrode on the second face; and a reflecting structure on a first end face of the laser structure. The reflecting structure includes an insulating film having a first end on the first face and a second end on the second face, and a metal film having a first end on the first face, and a second end on the second face. The insulating film is disposed between the laser structure and the first end and the second end of the metal film.

    Quantum cascade laser
    19.
    发明授权
    Quantum cascade laser 有权

    公开(公告)号：US09923337B2

    公开(公告)日：2018-03-20

    申请号：US15352159

    申请日：2016-11-15

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Hiroyuki Yoshinaga ,  Tsukuru Katsuyama ,  Jun-ichi Hashimoto

    IPC: H01S5/34 ,  H01S5/042 ,  H01S5/026

    CPC classification number: H01S5/3401 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/125 ,  H01S5/22 ,  H01S5/4087

    Abstract: A quantum cascade laser includes a laser structure including laser waveguide structures and a first terrace region; first electrodes; pad electrodes; and wiring metal conductors. The laser structure includes first, second and third regions arranged in a direction of a first axis. The third region is disposed between the first and second regions. The first region has a first end facet disposed at a boundary between the first and third regions. The first end facet extends in a direction intersecting with the first axis. The second region has a second end facet disposed at a boundary between the second and third regions. The second region includes the laser structure. The pad electrodes are disposed on the first terrace region. The first electrodes are disposed on the laser waveguide structures. Each of the pad electrodes is connected to one of the first electrodes through one of the wiring metal conductors.

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