公开(公告)号：US20190103495A1

公开(公告)日：2019-04-04

申请号：US15948097

申请日：2018-04-09

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Oh SEO ,  Byung Soo SO ,  Dong-Min LEE ,  Dong-Sung LEE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1218 ,  H01L27/1281 ,  H01L29/6675

Abstract: A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

公开(公告)号：US20250107338A1

公开(公告)日：2025-03-27

申请号：US18666466

申请日：2024-05-16

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Eok SHIN ,  Keun Woo KIM ,  Byung Soo SO ,  Seung Yong SONG ,  Ju Hyun LEE ,  Sung Soon IM ,  Keun Ho JANG ,  In Young JUNG

IPC: H10K59/122 ,  H10K50/17 ,  H10K59/12 ,  H10K59/131 ,  H10K71/20

Abstract: A display device includes a substrate having a light emitting area and a non-light emitting area; a first anode electrode on the light emitting area of the substrate; a pixel defining layer on the non-light emitting area of the substrate and defining a first opening; an organic separator layer on the pixel defining layer and defining a second opening; a first light emitting layer on the first anode electrode; a common electron layer on the first light emitting layer and the organic separator layer; and a common electrode on the common electron layer, wherein the organic separator layer does not overlap the light emitting area, and overlaps the non-light emitting area to be in contact with the pixel defining layer, the first light emitting layer, and the common electron layer.

公开(公告)号：US20250056970A1

公开(公告)日：2025-02-13

申请号：US18599386

申请日：2024-03-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Eok SHIN ,  Su Kyoung YANG ,  Dong Min LEE ,  Joon Yong PARK ,  Byung Soo SO ,  Yung Bin CHUNG

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

Abstract: A display device includes a pixel electrode in a light emission area, a pixel defining layer which is on the pixel electrode and defines the light emission area, a light emitting layer and a common electrode on the pixel electrode, a bank on the pixel defining layer, the bank including a first bank layer defining a lower portion of a bank opening corresponding to the light emission area and a second bank layer which defines an upper portion of the bank opening and a tip of the bank, the tip including upper and lower surfaces of the second bank layer, a lower inorganic encapsulation layer which is on the bank and includes an inorganic pattern on the common electrode and facing and spaced apart from both the upper and lower surfaces of the tip, and an auxiliary pattern between the lower surface of the tip and the inorganic pattern.

公开(公告)号：US20210359057A1

公开(公告)日：2021-11-18

申请号：US17192424

申请日：2021-03-04

Applicant: Samsung Display Co., LTD.

Inventor： Jong Oh SEO ,  Byung Soo SO

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.

公开(公告)号：US20200171600A1

公开(公告)日：2020-06-04

申请号：US16698842

申请日：2019-11-27

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung LEE ,  Dong-min LEE ,  Jongoh SEO ,  Byung Soo SO

IPC: B23K26/04 ,  B23K26/0622 ,  H01L21/20 ,  H01L21/02

Abstract: A laser crystallizing apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction for generating a dispersed line laser beam. The first direction may be perpendicular to a lengthwise direction of the optical module.

公开(公告)号：US20230100985A1

公开(公告)日：2023-03-30

申请号：US17825510

申请日：2022-05-26

Applicant: Samsung Display Co., LTD.

Inventor： Jaewoo JEONG ,  Taesung KIM ,  Hyunmin CHO ,  Taewook KANG ,  Byung Soo SO

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A display panel according to an embodiment includes a substrate, a thin film transistor disposed on the substrate, and a light emitting element electrically connected to the thin film transistor. The substrate includes a first resin layer, a first barrier layer disposed on the first resin layer, a second resin layer including a lower portion disposed on the first barrier layer and an upper portion having a carbon content less than a carbon content of the lower portion, and a second barrier layer disposed on the second resin layer.

公开(公告)号：US20220130667A1

公开(公告)日：2022-04-28

申请号：US17469279

申请日：2021-09-08

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Mann Ho CHO ,  Kwang Sik JEONG ,  Hyeon Sik KIM ,  Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE

IPC: H01L21/02

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

公开(公告)号：US20210143015A1

公开(公告)日：2021-05-13

申请号：US16907029

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hiroshi OKUMURA ,  Jong Jun BAEK ,  Byung Soo SO

IPC: H01L21/268 ,  B23K26/06 ,  H01L21/02

Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

公开(公告)号：US20200303424A1

公开(公告)日：2020-09-24

申请号：US16821484

申请日：2020-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung LEE ,  Jongoh SEO ,  Byung Soo SO ,  Dong-min LEE ,  Yeon Hee JEON ,  Jonghoon CHOI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US20200051835A1

公开(公告)日：2020-02-13

申请号：US16535021

申请日：2019-08-07

Applicant: Samsung Display Co., Ltd.

Inventor： Byung Soo SO ,  In Cheol KO ,  Jong Jun BAEK ,  Jae Woo JEONG

IPC: H01L21/67 ,  H05B6/80

Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.