公开(公告)号：US20250143091A1

公开(公告)日：2025-05-01

申请号：US18758082

申请日：2024-06-28

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE ,  Yung Bin CHUNG ,  Yu Gwang JEONG

IPC: H10K59/122

Abstract: A display device includes a first separation layer disposed in an emission area of a substrate, a second separation layer disposed on the first separation layer, an insulating layer disposed on the second layer, a first electrode disposed on the insulating layer, a light emitting structure disposed on the first electrode, and a second electrode disposed on the light emitting structure. The first electrode includes a first area on the second layer and a second area electrically separated from the first area.

公开(公告)号：US20200328237A1

公开(公告)日：2020-10-15

申请号：US16808157

申请日：2020-03-03

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-min LEE ,  Ji-Hwan KIM ,  Jongoh SEO ,  Byung Soo SO ,  Dong-Sung LEE ,  Jonghoon CHOI

IPC: H01L27/12 ,  H01L21/02

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

公开(公告)号：US20190123123A1

公开(公告)日：2019-04-25

申请号：US16041968

申请日：2018-07-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong Oh SEO ,  Byung Soo SO ,  Dong-Min LEE ,  Dong-Sung LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  G09G3/3266 ,  G09G3/3291

CPC classification number: H01L27/3276 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  H01L27/12 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5203 ,  H01L51/5237 ,  H01L51/56

Abstract: An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.

公开(公告)号：US20220102447A1

公开(公告)日：2022-03-31

申请号：US17503358

申请日：2021-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung LEE ,  Seo Jong OH ,  Byung Soo SO ,  Dong-min LEE

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

公开(公告)号：US20200168743A1

公开(公告)日：2020-05-28

申请号：US16594284

申请日：2019-10-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tae Hoon YANG ,  Kibum KIM ,  Jongjun BAEK ,  Byung Soo SO ,  Jong chan LEE ,  Woong Hee JEONG ,  Jaewoo JEONG

IPC: H01L29/786 ,  H01L27/12

Abstract: A display apparatus includes a base substrate, an active pattern on the base substrate including a source region, a drain region, and a channel region that is doped between the source region and the drain region, the channel region including polycrystalline silicon, and a gate electrode overlapping the channel region of the active pattern. The channel region may include a lower portion, an upper portion, and an intermediate portion between the upper portion and the lower portion, and a dopant density of the lower portion may be 80% or more of a dopant density of the upper portion.

公开(公告)号：US20200152723A1

公开(公告)日：2020-05-14

申请号：US16677042

申请日：2019-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Jongoh SEO ,  In Cheol KO ,  Byung Soo SO ,  Dong-min LEE ,  Dong-Sung LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/00

Abstract: A display device may include a substrate, a first layer on the substrate, the first layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a second layer on the first layer, an active pattern on the second layer, the active pattern overlapping only the first portion of the first layer, a gate electrode on the active pattern, a source electrode and a drain electrode on the gate electrode and connected to the active pattern, a first electrode connected to one of the source electrode and the drain electrode, a pixel defining layer on the first electrode, the pixel defining layer having an opening portion exposing at least a portion of the first electrode, an emission layer in the opening portion on the first electrode, and a second electrode on the emission layer.

公开(公告)号：US20150102350A1

公开(公告)日：2015-04-16

申请号：US14479557

申请日：2014-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung Soo SO ,  Jong Hyun CHOI ,  Shin Moon KANG ,  IL Hun SEO

IPC: H01L27/12

CPC classification number: H01L27/1237 ,  H01L27/1255 ,  H01L27/1274

Abstract: A thin film transistor array panel includes a plurality of pixels on a substrate. Each pixel of the plurality of pixels includes a driving and a switching thin film transistor. The driving thin film transistor includes a first semiconductor including first source and drain regions, a first gate electrode overlapping the first semiconductor, a gate insulating layer between the first semiconductor and the first gate electrode, an oxide layer between the first semiconductor and the gate insulating layer, and first source and drain electrodes. The switching thin film transistor includes a second semiconductor including second source and drain regions, a second gate electrode overlapping the second semiconductor, and second source and drain electrodes. The switching thin film transistor includes the gate insulating layer between the second semiconductor and the second gate electrode. The gate insulating layer contacts an upper portion of the second semiconductor.

Abstract translation: 薄膜晶体管阵列面板包括在基板上的多个像素。 多个像素中的每个像素包括驱动和开关薄膜晶体管。 驱动薄膜晶体管包括：包括第一源极和漏极区域的第一半导体，与第一半导体重叠的第一栅极电极，在第一半导体和第一栅极电极之间的栅极绝缘层，第一半导体和栅极绝缘之间的氧化物层 层和第一源极和漏极。 开关薄膜晶体管包括包括第二源极和漏极区域的第二半导体，与第二半导体重叠的第二栅极电极以及第二源极和漏极电极。 开关薄膜晶体管包括在第二半导体和第二栅电极之间的栅极绝缘层。 栅绝缘层接触第二半导体的上部。

公开(公告)号：US20240071757A1

公开(公告)日：2024-02-29

申请号：US18502583

申请日：2023-11-06

Applicant: Samsung Display Co., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Mann Ho CHO ,  Kwang Sik JEONG ,  Hyeon Sik KIM ,  Hyun Eok SHIN ,  Byung Soo SO ,  Ju Hyun LEE

IPC: H01L21/02

CPC classification number: H01L21/02491 ,  H01L21/02422 ,  H01L21/02502 ,  H01L21/0254

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

公开(公告)号：US20220173134A1

公开(公告)日：2022-06-02

申请号：US17672574

申请日：2022-02-15

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-min LEE ,  Ji-Hwan KIM ,  Jongoh SEO ,  Byung Soo SO ,  Dong-Sung LEE ,  Jonghoon CHOI

IPC: H01L27/12 ,  H01L21/02 ,  B23K26/53 ,  H01S3/00 ,  G02B27/12

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

公开(公告)号：US20210057218A1

公开(公告)日：2021-02-25

申请号：US16997454

申请日：2020-08-19

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Min LEE ,  Ji-Hwan KIM ,  Jongoh SEO ,  Byung Soo SO

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/67

Abstract: A laser annealing device includes a stage, a laser generator, and a reflective member. The stage supports a substrate with a thin film formed thereon to be processed, and may be moved in a first direction at a set or predetermined speed. The laser generator irradiates a first area of the thin film with a laser beam while the stage is moved. The reflective member reflects a part of the laser beam, which is reflected from the first area of the thin film, to a second area of the thin film. The first area and the second area are spaced apart from each other.