公开(公告)号：US20140239295A1

公开(公告)日：2014-08-28

申请号：US14190722

申请日：2014-02-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Woo PARK ,  Dong-Jo Kim ,  Ju-Ok Park ,  In-Sung Sohn ,  Sang-Won Yoon ,  Gun-Hyo Lee ,  Yong-Jin Lee ,  Yoon-Gyu Lee ,  Do-Hyun Kim ,  Woo-Seok Jeon

IPC: H01L29/786 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/3414

Abstract: Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body.

Abstract translation: 提供了一种基于氧化锌的溅射靶，其制备方法和包含由氧化锌基溅射靶沉积的势垒层的薄膜晶体管。 基于氧化锌的溅射靶包括由氧化锌组成的烧结体，其中氧化铟掺杂在约1％w / w至约50％w / w的范围内。 背板联接到烧结体的背面。 背板支撑烧结体。

公开(公告)号：US10439067B2

公开(公告)日：2019-10-08

申请号：US14858281

申请日：2015-09-18

Applicant: Samsung Display Co., Ltd.

Inventor： Ki-Won Kim ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Hyun-Jung Lee

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L21/02 ,  H01L27/32 ,  H01L29/66

Abstract: A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.

公开(公告)号：US10283528B2

公开(公告)日：2019-05-07

申请号：US14881923

申请日：2015-10-13

Applicant: Samsung Display Co., Ltd.

Inventor： Jun Hyun Park ,  Do-Hyun Kim

IPC: H01L27/12 ,  H01L21/77 ,  C08G77/16 ,  G02F1/1333 ,  G02F1/1362

Abstract: A thin film transistor array panel, including: a first insulating substrate; a gate line disposed on the first insulating substrate and including a gate electrode; a semiconductor layer disposed on the gate electrode; a data conductor layer disposed on the semiconductor layer, and including a data line crossing the gate line, a source electrode connected to the data line and exposing at least a part of the semiconductor layer, and a drain electrode facing the source electrode; a capping layer disposed on the data conductor layer, the semiconductor layer exposed between the source electrode and the drain electrode, and the entire surface of the first insulating substrate; and a first passivation layer disposed on the capping layer. The capping layer and the semiconductor layer include the same material.

公开(公告)号：US09484363B2

公开(公告)日：2016-11-01

申请号：US14622440

申请日：2015-02-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Je-Hun Lee ,  Do-Hyun Kim

IPC: G02F1/13 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417

CPC classification number: H01L27/1225 ,  G02F1/136286 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

公开(公告)号：US09123597B2

公开(公告)日：2015-09-01

申请号：US14319012

申请日：2014-06-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Je-Hun Lee ,  Ki-Won Kim ,  Do-Hyun Kim ,  Woo-Geun Lee ,  Kap-Soo Yoon

IPC: H01L51/40 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Abstract translation: TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在 半导体氧化物层和栅电极。 栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

公开(公告)号：US09111805B2

公开(公告)日：2015-08-18

申请号：US14230787

申请日：2014-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US08703549B2

公开(公告)日：2014-04-22

申请号：US13775777

申请日：2013-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Hyung Ihn

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

Abstract translation: 在衬底上形成氧化物或氮化物半导体层。 包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。 第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。 第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

公开(公告)号：US09245906B2

公开(公告)日：2016-01-26

申请号：US14795431

申请日：2015-07-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae Woo Park ,  Do-Hyun Kim ,  Young Joo Choi ,  Dong Hoon Lee ,  Sung Haeng Cho

IPC: H01L29/10 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.

公开(公告)号：US20150318312A1

公开(公告)日：2015-11-05

申请号：US14799060

申请日：2015-07-14

Applicant: Samsung Display Co.,Ltd

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

公开(公告)号：US20130299817A1

公开(公告)日：2013-11-14

申请号：US13660362

申请日：2012-10-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae Woo PARK ,  Do-Hyun Kim ,  Young Joo Choi ,  Dong Hoon Lee ,  Sung Haeng Cho

IPC: H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.