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公开(公告)号：US20210242291A1
公开(公告)日：2021-08-05
申请号：US17081342
申请日：2020-10-27
Applicant: Samsung Display Co., Ltd.
Inventor： Kyungjin Jeon , Soyoung Koo , Eoksu Kim , Junhyung Lim
IPC: H01L27/32
Abstract: A display apparatus includes a thin film transistor facing a substrate with a buffer layer therebetween and including a semiconductor layer, a channel region, a source region, a drain region, and a gate electrode; a conductive pattern between the substrate and the semiconductor layer and connected to the semiconductor layer, the conductive pattern facing the semiconductor layer with the buffer layer therebetween; a contact hole in the buffer layer and exposing the conductive pattern to outside the buffer layer; and a display element which is electrically connected to the thin film transistor. The source region or the drain region extends through the contact hole in the buffer layer, to contact the conductive pattern and connect the semiconductor layer to the conductive pattern.
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12.发明授权公开(公告)号：US09263470B1
公开(公告)日：2016-02-16
申请号：US14585525
申请日：2014-12-30
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Dongjo Kim , Myounggeun Cha , Yoonho Khang , Soyoung Koo
IPC: H01L21/00 , H01L27/12 , H01L29/786 , H01L21/02 , H01L27/32
CPC classification number: H01L27/1218 , H01L21/02422 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/02532 , H01L21/02686 , H01L27/1222 , H01L29/66757 , H01L29/66772 , H01L29/78603 , H01L29/78654 , H01L29/78675
Abstract: Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.
Abstract translation: 本发明提供一种半导体器件，其包括在衬底上并包括倾斜表面的缓冲层; 位于缓冲层上的晶体硅层; 位于结晶硅层上同时与晶体硅层绝缘的栅电极; 以及源极电极和漏极电极，其电连接到晶体硅层，基板和倾斜表面之间的角度在约17.5度至小于约70度的范围内。
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公开(公告)号：US12274108B2
公开(公告)日：2025-04-08
申请号：US17537993
申请日：2021-11-30
Inventor： Jun Hyung Lim , Yong-Young Noh , Soyoung Koo , Hyungjun Kim , Huihui Zhu
Abstract: A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.
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Patent Agency Ranking
公开(公告)号：US20230037108A1
公开(公告)日：2023-02-02
申请号：US17841206
申请日：2022-06-15
Applicant: Samsung Display Co., Ltd.
Inventor： Soyoung Koo , Eoksu Kim , Hyungjun Kim , Yunyong Nam , Junhyung Lim , Kyungjin Jeon
IPC: H01L27/32 , G09G3/3266 , G09G3/3291
Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.
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公开(公告)号：US11495650B2
公开(公告)日：2022-11-08
申请号：US17081342
申请日：2020-10-27
Applicant: Samsung Display Co., Ltd.
Inventor： Kyungjin Jeon , Soyoung Koo , Eoksu Kim , Junhyung Lim
Abstract: A display apparatus includes a thin film transistor facing a substrate with a buffer layer therebetween and including a semiconductor layer, a channel region, a source region, a drain region, and a gate electrode; a conductive pattern between the substrate and the semiconductor layer and connected to the semiconductor layer, the conductive pattern facing the semiconductor layer with the buffer layer therebetween; a contact hole in the buffer layer and exposing the conductive pattern to outside the buffer layer; and a display element which is electrically connected to the thin film transistor. The source region or the drain region extends through the contact hole in the buffer layer, to contact the conductive pattern and connect the semiconductor layer to the conductive pattern.
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公开(公告)号：US20220149132A1
公开(公告)日：2022-05-12
申请号：US17246989
申请日：2021-05-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Yeonkeon Moon , Taesang Kim , Joonseok Park , Sangwoo Sohn , Soyoung Koo
Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.
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公开(公告)号：US20210280667A1
公开(公告)日：2021-09-09
申请号：US17328026
申请日：2021-05-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyungjin Jeon , Joonseok Park , Soyoung Koo , Myounghwa Kim , Eoksu Kim , Taesang Kim , Hyungjun Kim , Yeonkeon Moon , Geunchul Park , Sangwoo Sohn , Junhyung Lim , Hyelim Choi
Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.
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18.发明授权公开(公告)号：US09412771B2
公开(公告)日：2016-08-09
申请号：US14793966
申请日：2015-07-08
Applicant: Samsung Display Co., Ltd
Inventor： Soyoung Koo , Myounghwa Kim , Sangho Park , Jun Hyung Lim , Masataka Kano
CPC classification number: H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L21/477 , H01L29/24 , H01L29/66969 , H01L29/78693 , H01L2227/323
Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.
Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。
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