Display device
    11.
    发明授权

    公开(公告)号:US11335759B2

    公开(公告)日:2022-05-17

    申请号:US16806437

    申请日:2020-03-02

    Abstract: A display device includes: a substrate including a display area and a peripheral area outside the display area; a plurality of display elements arranged in the display area; and a pad disposed in the peripheral area and having a multi-layered structure, where the multi-layered structure of the pad includes: a metal layer; a conductive protective layer on a top surface of the metal layer; and a metal thin film on a top surface of the conductive protective layer.

    Etching device useful for manufacturing a display device
    14.
    发明授权
    Etching device useful for manufacturing a display device 有权
    用于制造显示装置的蚀刻装置

    公开(公告)号:US09053987B2

    公开(公告)日:2015-06-09

    申请号:US14267167

    申请日:2014-05-01

    CPC classification number: H01L27/1259 H01L29/40 H01L2933/0016

    Abstract: A manufacturing method of a display device includes: forming a thin film transistor on a substrate, forming a pixel electrode connected to the thin film transistor, and forming a common electrode insulated from the pixel electrode. At least one of forming the pixel electrode and forming the common electrode includes: forming an electrode layer on the substrate, coating a photoresist on the electrode layer to form a first electrode sub-layer on which the photoresist is coated and a second electrode sub-layer on which the photoresist is not coated, generating etching vapor by heating an etching solution in a double boiler, and etching the second electrode sub-layer by using the etching vapor.

    Abstract translation: 显示装置的制造方法包括:在基板上形成薄膜晶体管,形成与薄膜晶体管连接的像素电极,形成与像素电极绝缘的公共电极。 形成像素电极和形成公共电极中的至少一个包括:在衬底上形成电极层,在电极层上涂覆光致抗蚀剂以形成其上涂覆有光致抗蚀剂的第一电极子层和第二电极子层, 其上没有涂覆光致抗蚀剂的层,通过加热双锅炉中的蚀刻溶液产生蚀刻蒸气,并且通过使用蚀刻蒸气蚀刻第二电极子层。

    ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME
    15.
    发明申请
    ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
    使用其制造金属接线和薄膜晶体管基板的蚀刻组合物和方法

    公开(公告)号:US20150087148A1

    公开(公告)日:2015-03-26

    申请号:US14263956

    申请日:2014-04-28

    Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

    Abstract translation: 包含0.5重量%至20重量%的过硫酸盐,0.01重量%至1重量%的氟化合物,1重量%至10重量%的无机酸,0.01重量%至2重量%的唑类, 0.1重量%至5重量%的氯化合物,0.05重量%至3重量%的铜盐,0.01重量%至5重量%的抗氧化剂或其盐,基于蚀刻剂的总重量 组合物和水的量足以使蚀刻剂组合物的总重量等于100重量%。 蚀刻剂组合物适用于通过蚀刻包括铜的金属层或制造用于显示装置的薄膜晶体管基板来形成金属布线。

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