Abstract:
A display device includes: a substrate including a display area and a peripheral area outside the display area; a plurality of display elements arranged in the display area; and a pad disposed in the peripheral area and having a multi-layered structure, where the multi-layered structure of the pad includes: a metal layer; a conductive protective layer on a top surface of the metal layer; and a metal thin film on a top surface of the conductive protective layer.
Abstract:
An organic light-emitting diode includes a first electrode and a second electrode that face each other, an organic emission layer between the first electrode and the second electrode, and an inorganic hole injection layer between the first electrode and the organic emission layer. The inorganic hole injection layer includes oxide of a form A-B-O, including an element A and an element B. The element A is one of molybdenum (Mo) and tungsten (W). The element B is one of vanadium (V), niobium (Nb), and tantalum (Ta). An atom content (x) of the element B is greater than 0 and no more than 15 at % (0
Abstract:
An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.
Abstract:
A manufacturing method of a display device includes: forming a thin film transistor on a substrate, forming a pixel electrode connected to the thin film transistor, and forming a common electrode insulated from the pixel electrode. At least one of forming the pixel electrode and forming the common electrode includes: forming an electrode layer on the substrate, coating a photoresist on the electrode layer to form a first electrode sub-layer on which the photoresist is coated and a second electrode sub-layer on which the photoresist is not coated, generating etching vapor by heating an etching solution in a double boiler, and etching the second electrode sub-layer by using the etching vapor.
Abstract:
An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.
Abstract:
A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.
Abstract:
A display device includes a base layer, a display element disposed on the base layer, and a signal line disposed on the base layer and electrically connected to the display element. The signal line includes a conductive layer and a capping layer. The capping layer is disposed on the conductive layer and includes vanadium nitride (VN) and zinc oxide (ZnO). The display device may reduce the reflection of an external light source, thereby having improved visibility.
Abstract:
A mask for thin film deposition includes a first mask which defines an opening, and a second mask on a surface of the first mask, and which defines a plurality of deposition holes and has a multilayer structure, in which the opening and the plurality of deposition holes communicate with each other and provide a passage for a deposition material, a size of each of the plurality of deposition holes is smaller than a size of the opening, and each of the plurality of deposition holes has a shape corresponding to a deposition pattern to be patterned on a substrate.
Abstract:
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
Abstract:
A mask for thin film deposition includes a first mask which defines an opening, and a second mask on a surface of the first mask, and which defines a plurality of deposition holes and has a multilayer structure, in which the opening and the plurality of deposition holes communicate with each other and provide a passage for a deposition material, a size of each of the plurality of deposition holes is smaller than a size of the opening, and each of the plurality of deposition holes has a shape corresponding to a deposition pattern to be patterned on a substrate.