-
公开(公告)号：US20250004177A1
公开(公告)日：2025-01-02
申请号：US18440053
申请日：2024-02-13
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Je Hong KYOUNG , Yong Suk KIM , Joung Hun KIM , Byung Ju KIM , Jung Ho LEE , Na Yi KANG
Abstract: A lens includes a lens portion; a multilayer anti-reflective (AR) coating layer, including either one or both of a low refractive index layer and a high refractive index layer, disposed on one surface of the lens portion; and a water-repellent layer, including a water repellent, disposed on one surface of the multilayer AR coating layer. Either one or both of the low refractive index layer and the high refractive index layer are formed of a nitride-based material with a band gap greater than 3.1 eV.
-
公开(公告)号：US20240364299A1
公开(公告)日：2024-10-31
申请号：US18608106
申请日：2024-03-18
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Jong Woon KIM , Jeonga KIM , Jeong Hoon RYOU , Won HAN , Sang Uk SON , Tae Kyung LEE
CPC classification number: H03H9/02157 , H03H9/02023 , H03H9/132
Abstract: A bulk acoustic resonator includes an active region in which a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode in a height direction, and a second electrode disposed on the piezoelectric layer in the height direction overlap each other in the height direction; a peripheral region in which the first electrode or the second electrode extends outwardly from the active region so that the first electrode and the second electrode do not overlap each other in the height direction in the peripheral region; and an auxiliary layer disposed in the peripheral region, wherein a first cutoff frequency of the active region is substantially equal to a second cutoff frequency of the peripheral region.
-
公开(公告)号：US20230370048A1
公开(公告)日：2023-11-16
申请号：US18101267
申请日：2023-01-25
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Kwang Su KIM , Jae Hyoung GIL , Moon Chul LEE , Yong Suk KIM , Dong Hyun PARK , Tae Kyung LEE
CPC classification number: H03H9/174 , H03H9/131 , H03H9/02015 , H03H9/173
Abstract: A bulk-acoustic wave resonator includes a substrate; a lower electrode, disposed on the substrate, comprising a first inclined surface and a second inclined surface; and an insertion layer disposed on an edge of the lower electrode. The first inclined surface extends from an inclined surface of the insertion layer in a region disposed inside the insertion layer. The second inclined surface extends from the first inclined surface in a region inside a region of the first inclined surface.
-
公开(公告)号：US20220038077A1
公开(公告)日：2022-02-03
申请号：US17094019
申请日：2020-11-10
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung LEE , Yong Suk KIM , Sang Kee YOON , Jin Suk SON , Ran Hee SHIN
Abstract: A bulk-acoustic wave resonator includes a resonator having a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion and in which an insertion layer is disposed below the piezoelectric layer, wherein the insertion layer includes a SiO2 thin film injected with fluorine (F).
-
公开(公告)号：US20220038075A1
公开(公告)日：2022-02-03
申请号：US17144602
申请日：2021-01-08
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Won Han , Moon Chul LEE , Sang Uk SON , Hwa Sun LEE
Abstract: A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.
-
Patent Agency Ranking
公开(公告)号：US20210367582A1
公开(公告)日：2021-11-25
申请号：US17104703
申请日：2020-11-25
Applicant: Samsung Electro-Mechanics Co., Ltd
Inventor： Tae Kyung LEE , Ran Hee SHIN , Chang Hyun LIM , Tae Yoon KIM , Sang Kee YOON , Moon Chul LEE , Jae Goon AUM
Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current density×scandium (Sc) content
-
公开(公告)号：US20200177155A1
公开(公告)日：2020-06-04
申请号：US16540480
申请日：2019-08-14
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Seung Wook PARK , Tae Kyung LEE , Seong Hun NA , Jae Chang LEE , Jae Hyun JUNG
IPC: H03H9/10 , H03H9/05 , H01L41/09 , H01L41/053 , H03H3/02 , H03H9/60 , H03H9/58 , H01L41/047 , H03H9/17
Abstract: A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.
-
公开(公告)号：US20200021265A1
公开(公告)日：2020-01-16
申请号：US16271158
申请日：2019-02-08
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung LEE , Kwang Su KIM , Jin Suk SON , Yeong Gyu LEE , Sung Sun KIM , Sang Jin KIM
Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other, wherein the cap includes a trench formed around the bonding portion and a protective layer covering a surface of the trench in the cap, and wherein a portion of the bonding portion fills at least a portion of the trench.
-
公开(公告)号：US20190058451A1
公开(公告)日：2019-02-21
申请号：US16039952
申请日：2018-07-19
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung LEE , Ran Hee SHIN , Je Hong KYOUNG , Hwa Sun LEE , Jin Suk SON , Sung Sun KIM
IPC: H03H9/02
CPC classification number: H03H9/131 , H03H9/02015 , H03H9/173 , H03H9/175
Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).
-
公开(公告)号：US20180351534A1
公开(公告)日：2018-12-06
申请号：US15875541
申请日：2018-01-19
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Tae Kyung LEE , Jin Suk SON , Je Hong KYOUNG , Ran Hee SHIN , Sung Sun KIM
Abstract: An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer and having a hydrophobic layer disposed on at least one of a portion of an upper surface of the cavity and a portion of a lower surface of the cavity; and a resonating portion disposed on the cavity and having a second electrode on a piezoelectric layer on a first electrode.
-
-
-
-
-
-
-
-
-
Search Results
84
records
(took 0.028 seconds)
