Patent search ap:("Samsung Electronics Co. Page Ltd.") AND inv:"Dong-Hyun Kim"

11.

发明授权
Method for data scheduling and power control and electronic device thereof 有权

公开(公告)号：US09848431B2

公开(公告)日：2017-12-19

申请号：US14853429

申请日：2015-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun Kim , Seong-Wook Song , Jong-Han Lim

IPC: H04W28/04 , H04W72/08 , H04L5/00 , H04W56/00 , H04B17/373 , H04W88/04 , H04W72/04 , H04W52/22 , H04W52/24 , H04W52/28

CPC classification number: H04W72/085 , H04B17/373 , H04L5/0048 , H04L5/0057 , H04W52/223 , H04W52/241 , H04W52/285 , H04W56/001 , H04W72/048 , H04W88/04

Abstract: A method of operating a first terminal is provided. The method includes detecting a signal pattern according to motion of the first terminal by a sensor included in the first terminal, wherein the signal pattern corresponds to a pattern of wireless channel quality between the first terminal and a second terminal; predicting the wireless channel quality between the first terminal and the second terminal using the signal pattern detected by the sensor; and allocating a resource for transmitting data to the second terminal on the basis of the predicted channel quality.

12.

外观设计
Mobile terminal 有权
Title translation: 移动终端

公开(公告)号：USD745004S1

公开(公告)日：2015-12-08

申请号：US29513656

申请日：2015-01-05

Applicant: Samsung Electronics Co., Ltd.

Designer： Dong-Hyun Kim

CPC classification number: H04M1/0268 , G06F1/1626 , G06F1/165 , G06F1/1652 , G06F1/1694 , G09G3/2092 , G09G5/14 , H01H2219/039 , H04M1/0281 , H04M1/22 , H04M1/57 , H04M3/42042 , H04M19/04 , H04M2201/38 , H04M2250/12 , H04W4/12 , H04W68/00 , H04W68/02

13.

发明申请
METHOD FOR EXTRACTING ITERFERENCE SIGNAL INFORMATION AND APPARATUS FOR THE SAME 有权
Title translation: 提取信号信号信息的方法及其设备

公开(公告)号：US20150256292A1

公开(公告)日：2015-09-10

申请号：US14640680

申请日：2015-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Wook SONG , Dong-Hyun Kim , Sung-Yoon Cho , Jong-Han Lim

IPC: H04L1/00 , H04B15/00 , H04B7/04

CPC classification number: H04L1/0048 , H04B7/0452 , H04L1/0061 , H04L1/0072

Abstract: A method and apparatus are provided for extracting interference signal information. The method includes demodulating control channel signals received from serving and adjacent cells; decoding the control channel signals received from the serving cell to extract control information; decoding the control channel signals received from the adjacent cell; extracting, at each subframe, from the decoded control channel signals received from the adjacent cell, a terminal ID of the adjacent cell; accumulating the extracted terminal IDs; filtering only a control channel signal from among the control channel signals received from the adjacent cell corresponding to a terminal ID having an accumulation count that is greater than or equal to a threshold; determining a reliability value of the filtered control channel signal; identifying the filtered control channel signal as a first interference signal, based on the reliability value; and extracting interference signal information based on the first interference signal.

Abstract translation: 提供了一种用于提取干扰信号信息的方法和装置。该方法包括解调从服务和相邻小区接收的控制信道信号; 解码从服务小区接收的控制信道信号以提取控制信息; 解码从相邻小区接收的控制信道信号; 在每个子帧处从从相邻小区接收的解码控制信道信号中提取相邻小区的终端ID; 累积提取的终端ID; 仅对与从具有大于或等于阈值的累积计数的终端ID相对应的相邻小区接收的控制信道信号中仅过滤控制信道信号; 确定滤波的控制信道信号的可靠性值; 基于所述可靠性值，将滤波后的控制信道信号识别为第一干扰信号; 以及基于所述第一干扰信号提取干扰信号信息。

14.

发明授权
Electronic apparatus and control method thereof 有权

公开(公告)号：US11074671B2

公开(公告)日：2021-07-27

申请号：US16533850

申请日：2019-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Seung Lee , Dong-Hyun Kim , Young-Su Moon , Tae-gyoung Ahn

IPC: G06T3/40 , G06T5/50 , G06K9/00

Abstract: An electronic apparatus is provided. The electronic apparatus includes: a storage configured to store a plurality of filters each corresponding to a plurality of image patterns; and a processor configured to classify an image block including a target pixel and a plurality of surrounding pixels into one of the plurality of image patterns based on a relationship between pixels within the image block and to obtain a final image block in which the target pixel is image-processed by applying at least one filter corresponding to the classified image pattern from among the plurality of filters to the image block, wherein the plurality of filters are obtained by learning, through an artificial intelligence algorithm, a relationship between a plurality of first sample image blocks and a plurality of second sample image blocks corresponding to the plurality of first sample image blocks based on each of the plurality of image patterns.

15.

发明授权
Apparatus and method for accessing wireless network 有权

公开(公告)号：US10212579B2

公开(公告)日：2019-02-19

申请号：US15704987

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Wook Song , Dong-Hyun Kim , Jong-Han Lim

IPC: H04W4/70 , H04W8/18 , H04W8/20 , H04W84/18 , H04W84/20 , H04W12/06 , H04W4/80 , H04W8/26 , H04L29/06

Abstract: A method of using subscriber identification information stored in mobile user equipment (UE) to connect to a communication service over a public wireless network in the UE, establishing a communication link between the UE and a device, generating network access information (NAI) associated with the communication service in the UE, and sending the NAI from the UE to the device via the communication link. The method further comprises connecting the communication service in the device using the NAI and terminating the connection of the communication service in the UE.

16.

发明授权
Method of designing a layout of a semiconductor device, and a semiconductor device including a fin 有权

公开(公告)号：US10121735B2

公开(公告)日：2018-11-06

申请号：US15794131

申请日：2017-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Ah Nam , Ikuo Nakamatsu , Dong-Hyun Kim , Chul-Hong Park , Yun-Se Oh , Hae-Wang Lee , Ho-Jun Choi

IPC: H01L27/088 , H01L23/498 , H01L23/48 , H01L29/78 , H01L29/66

Abstract: A semiconductor device includes active fins on a substrate. Gate lines each extend in the second direction on the active fins. A contact plug is positioned on the active fins. A first via is in one of the first contact plugs. A first conductive line overlaps a first via. A first distance from a first active fin on which a first gate line of the gate lines is formed to an end of the first gate line is more than a predetermined distance. A second distance from a second active fin on which the first gate line is formed to the first active fin of the active fins is equal to or less than the predetermined distance. The second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs.

17.

发明授权
Methods of fabricating FinFET semiconductor devices including dummy structures 有权

公开(公告)号：US09653363B2

公开(公告)日：2017-05-16

申请号：US15167050

申请日：2016-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok-Young Lee , Jeong-Yun Lee , Dong-Hyun Kim , Myeong-Cheol Kim , Dong-Woo Han

IPC: H01L21/336 , H01L21/8238 , H01L27/088 , H01L27/02 , H01L21/306 , H01L29/66

CPC classification number: H01L21/823821 , H01L21/30604 , H01L21/823828 , H01L27/0207 , H01L27/0886 , H01L29/6656 , H01L29/66795

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

18.

发明授权
Semiconductor device including field effect transistor 有权
Title translation: 包括场效应晶体管的半导体器件

公开(公告)号：US09548390B2

公开(公告)日：2017-01-17

申请号：US14742710

申请日：2015-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongun Kim , Dong-Hyun Kim , Hyun-Seung Song

IPC: H01L29/78 , H01L29/423 , H01L29/66 , H01L27/088 , H01L29/06 , H01L29/10 , H01L29/165

CPC classification number: H01L29/7851 , H01L27/0886 , H01L29/0649 , H01L29/1037 , H01L29/165 , H01L29/42392 , H01L29/66545 , H01L29/66818 , H01L29/7848 , H01L29/7853 , H01L2029/7858

Abstract: A semiconductor device includes a fin portion protruding from a substrate. The fin portion includes a base part, an intermediate part on the base part, and a channel part on the intermediate part. A width of the intermediate part is less than a width of the base part and greater than a width of the channel part. A gate electrode coves both sidewalls and a top surface of the channel part, and a device isolation pattern covers both sidewalls of the base part and both sidewalls of the intermediate part.

Abstract translation: 半导体器件包括从衬底突出的鳍部。翅片部分包括基部，基部上的中间部分和中间部分上的通道部分。中间部分的宽度小于基部的宽度并且大于通道部分的宽度。栅极电极使沟道部分的两个侧壁和顶表面均匀，并且器件隔离图案覆盖基部的两个侧壁和中间部分的两个侧壁。