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    QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
    11.
    发明申请
    QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220298413A1

    公开(公告)日：2022-09-22

    申请号：US17824225

    申请日：2022-05-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Shin Ae JUN ,  Taek hoon KIM ,  Hyeyeon YANG ,  Nayoun WON ,  Jongmin Lee ,  Mi Hye LIM

    IPC: C09K11/70 ,  C08F220/38 ,  C09K11/02 ,  C09K11/88 ,  H01L33/00 ,  H01L33/50

    Abstract: Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.

    LUMINESCENT NANOSTRUCURE, AND COLOR CONVERSION PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME
    12.
    发明申请
    LUMINESCENT NANOSTRUCURE, AND COLOR CONVERSION PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220282153A1

    公开(公告)日：2022-09-08

    申请号：US17687453

    申请日：2022-03-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Hyeyeon YANG ,  A Ra JO ,  Sue In CHAE ,  Sung Jun PARK ,  Hyokeun PARK ,  Shin Ae JUN

    IPC: C09K11/88 ,  G02F1/1335 ,  C09D11/50 ,  C09D11/037 ,  C09K11/08

    Abstract: A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.15:1, a mole ratio of chlorine to sulfur (Cl:S) is less than about 0.1:1, and a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1. The luminescent nanostructures don not include cadmium.

    QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME
    13.
    发明申请
    QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210284908A1

    公开(公告)日：2021-09-16

    申请号：US17199616

    申请日：2021-03-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Gon KIM ,  Jongmin LEE ,  Jooyeon AHN ,  Hyeyeon YANG ,  Shin Ae JUN

    IPC: C09K11/70 ,  H01L27/32 ,  C09K11/02

    Abstract: A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

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