公开(公告)号：US20210118880A1

公开(公告)日：2021-04-22

申请号：US16896423

申请日：2020-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin KIM ,  Jihye LEE ,  Sangmoon LEE ,  Seung Hun LEE

IPC: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：US20250031412A1

公开(公告)日：2025-01-23

申请号：US18677236

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin KIM ,  Donghoon HWANG ,  Myungil KANG

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes gate structures on an insulation structure, the gate structures disposed in a second direction substantially parallel to an upper surface of the insulation structure, source/drain layers at opposite sides, respectively, of each gate structure in a first direction intersecting the second direction, semiconductor patterns disposed in a third direction substantially perpendicular to the upper surface of the insulation structure, the semiconductor patterns extending through each of the gate structures and contacting the source/drain layers, a first division pattern between the gate structures, and a connection pattern extending into and contacting an upper portion of the first division pattern and upper portions of the gate structures adjacent to the first division pattern, a lower surface of the connection pattern being lower than upper surfaces of the gate structures and an upper surface of the connection pattern being higher than the upper surfaces of the gate structures.

公开(公告)号：US20240258437A1

公开(公告)日：2024-08-01

申请号：US18510146

申请日：2023-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisoo PARK ,  Donghoon HWANG ,  Inchan HWANG ,  Hyojin KIM ,  Jaehyoung LIM

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC classification number: H01L29/78696 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: A 3D stacked FET may include a back-side wiring layer including a first back-side power line and a second back-side power line, a first FET on the back-side wiring layer, a second FET over the first FET, a front-side wiring layer over the second FET, a first through-electrode connecting the first FET to the second FET, and a second through-electrode connecting the front-side and back-side power lines. The front-side wiring layer may extend in a first direction and may include a front-side power line connected to the second back-side power line. The first FET and the second FET may share a gate extending in a second direction. Each of the first FET and the second FET may include a source and a drain respectively on both sides of the gate in the first direction, and a channel between the source and the drain and surrounded by the gate.

公开(公告)号：US20240198142A1

公开(公告)日：2024-06-20

申请号：US18516870

申请日：2023-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin KIM ,  Yeonseung OH ,  Sungjune CHO ,  Younglae JO

IPC: A62B18/00 ,  A61B5/08 ,  A61M16/06 ,  A62B7/10 ,  A62B18/02

CPC classification number: A62B18/006 ,  A61B5/08 ,  A61M16/06 ,  A62B7/10 ,  A62B18/025 ,  A61B2562/0247 ,  A61M2230/40

Abstract: An electronic mask includes a memory configured to store default atmospheric pressure information corresponding to a user and a plurality of preset events corresponding to the default atmospheric pressure information, a pressure sensor configured to measure atmospheric pressure inside the electronic mask, a fan module configured to introduce outside air to inside of the electronic mask or discharge inside air to outside of the electronic mask, and at least one processor configured to obtain the measured atmospheric pressure through the pressure sensor, identify an event among the plurality of preset events based on the measured atmospheric pressure, and control the fan module to perform an operation corresponding to the identified event.

公开(公告)号：US20240115888A1

公开(公告)日：2024-04-11

申请号：US18216889

申请日：2023-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younglae JO ,  Joonhyoung KIM ,  Hyojin KIM ,  Youngchal PARK ,  Hyeongjoon SEO ,  Youngtae SONG ,  Sungjune CHO ,  Sungjin CHO ,  Wangbyung CHAE

IPC: A62B18/00 ,  A62B23/02

CPC classification number: A62B18/006 ,  A62B23/025

Abstract: A mask including a mask body and a blower. The mask body includes a first coupling part, and a second coupling part spaced apart from the first coupling part. The blower includes a third coupling part configured to be detachably couplable to the first coupling part and prevented from being coupled to the second coupling part, and a fourth coupling part configured to be detachably couplable to the second coupling part and prevented from being coupled to the first coupling part. With the third coupling part detachably coupled to the first coupling part and the fourth coupling part detachably coupled to the second coupling part, the blower is disposed to a rear of the mask body and is operable to force air to flow into and out of the mask.

公开(公告)号：US20230411487A1

公开(公告)日：2023-12-21

申请号：US18112122

申请日：2023-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjun NAM ,  Sangmoon LEE ,  Jinbum KIM ,  Hyojin KIM

IPC: H01L29/49 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/4908 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775

Abstract: A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode including a plurality of gate electrode portions, a gate electrode portion interposed between adjacent ones of the semiconductor patterns, and a plurality of barrier patterns each comprising an epitaxial layer including single-crystalline silicon oxide. ,A barrier pattern interposed between each of the adjacent ones of the semiconductor patterns and a respective gate electrode portion.

公开(公告)号：US20230175728A1

公开(公告)日：2023-06-08

申请号：US17953795

申请日：2022-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo HONG ,  Donghyun KIM ,  Sungwoo KIM ,  Hyunho KIM ,  Hyojin KIM ,  Moonsun SHIN ,  Jaehyoung SIM ,  Joonho YOON ,  Sungjune CHO ,  Wangbyung CHAE

IPC: F24F13/06

CPC classification number: F24F13/06

Abstract: An air conditioner may include: a first air conditioning unit disposed in a first space formed between a first ceiling and a second ceiling that is spaced downward from the ceiling inner wall and lower than the first ceiling, the first air conditioning unit configured to suction air from a second space recessed from the second ceiling toward the first ceiling; a second air conditioning unit disposed in the first space and to communicate with the first air conditioning unit and configured to discharge air introduced from the first air conditioning unit; and a guide device configured to guide the first air conditioning unit and the second air conditioning unit to move from the first space toward the second space or to move from the second space toward the first space.

公开(公告)号：US20220155259A1

公开(公告)日：2022-05-19

申请号：US17206358

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  POSTECH Research and Business Development Foundation

Inventor： Chulhong KIM ,  Jin Young KIM ,  Hyojin KIM ,  Jin Woo BAIK ,  Joongho AHN

IPC: G01N29/24 ,  G01N29/44

Abstract: A photoacoustic apparatus may include: a ring transducer configured to measure a photoacoustic signal generated from an object, and including a hollow space that is provided as a travel path of light and ultrasonic waves; a mirror part disposed along a light path of the light transmitted from the ring transducer, and configured to reflect the light transmitted from the ring transducer, and the ultrasonic waves generated from the object, and to adjust magnification of the mirror part according to a number of apertures of the photoacoustic apparatus; and a fluid tank including a transparent film that allows the photoacoustic signal to pass through the fluid tank, and accommodating a fluid, the ring transducer, and the mirror part inside the fluid tank.

公开(公告)号：US20250081559A1

公开(公告)日：2025-03-06

申请号：US18624201

申请日：2024-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung LEE ,  Hyun-Kwan YU ,  Hyojin KIM

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern including a first semiconductor pattern and a second semiconductor pattern, a source/drain pattern connected to the first and second semiconductor patterns, and a gate electrode including an electrode between the first and second semiconductor patterns, and an insulating layer between the first and second semiconductor patterns and the electrode. The insulating layer includes a dielectric layer enclosing the electrode and a spacer on the dielectric layer. The spacer includes a horizontal portion between the dielectric layer and the second semiconductor pattern, a vertical portion between the dielectric layer and the source/drain pattern, and a corner portion connecting the horizontal portion to the vertical portion. A first thickness of the horizontal portion is smaller than a second thickness of the vertical portion, and the second thickness is smaller than a third thickness of the corner portion.

公开(公告)号：US20250040185A1

公开(公告)日：2025-01-30

申请号：US18596247

申请日：2024-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin KIM ,  Youngdae CHO ,  Sungkeun LIM

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a substrate layer; a source/drain epitaxial layer between first channel layers and second channel layers; a backside contact structure electrically connected to the source/drain epitaxial layer, wherein the backside contact structure is between the source/drain epitaxial layer and a lower surface of the substrate layer, first width of the source/drain epitaxial layer at an upper surface of the substrate layer is greater than a second width at an interface between the source/drain epitaxial layer and the backside contact structure, a first portion of the backside contact structure is closer than a closest end of the source/drain epitaxial layer to the lower surface of the substrate layer, the first portion of the backside contact structure has a third width, and the third width is greater than the second width.