公开(公告)号：US11632508B2

公开(公告)日：2023-04-18

申请号：US17895385

申请日：2022-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Seungsik Kim

IPC: H04N5/359 ,  H04N9/04 ,  H04N5/378 ,  H01L27/146

Abstract: An imaging device includes a pixel array with first and second pixels respectively having first and second conversion gains connected to row and column lines; a row driver determining a selection row line among the row lines; a readout circuit obtaining first and second pixel signals from first and second pixels connected to the selection row line; a column driver generating first and second image data from the first and second pixel signals; and an image signal processor using the first and second image data to generate an object image. The second pixels include an expansion capacitor connected between a floating diffusion node and a ground node. Exposure time of the first pixels is equal to or longer than exposure time of the second pixels. An area of a light receiving region of the first pixels is equal to an area of a light receiving region of the second pixels.

公开(公告)号：US20210134873A1

公开(公告)日：2021-05-06

申请号：US16898212

申请日：2020-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doowon Kwon ,  Ingyu Baek

IPC: H01L27/146

Abstract: An image sensor includes a first layer including pixels in a pixel array, and a first logic circuit configured to control the pixel array. Each of the pixels include at least one photodiode configured to generate a charge in response to light, and a pixel circuit configured to generate a pixel signal corresponding to the charge. A second layer includes a second logic circuit that is connected to the pixel array and the first logic circuit and is on the first layer. A third layer includes storage elements that are electrically connected to at least one of the pixels or the first logic circuit and an insulating layer on the storage elements. A lower surface of the insulating layer is attached to an upper portion of the first layer, and an upper surface of the insulating layer is attached to a lower portion of the second layer.

公开(公告)号：US10964740B2

公开(公告)日：2021-03-30

申请号：US16407870

申请日：2019-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyong Choi ,  Haemin Lim ,  Joosung Moon ,  Ingyu Baek ,  Seunghan Yoo ,  Minjung Chung

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a photoelectric conversion layer in the semiconductor substrate, transistors on the first surface of the semiconductor substrate, a first interlayer insulation layer on the transistors, a first lower pad electrode and a second lower pad electrode spaced apart from the first lower pad electrode on the first interlayer insulation layer, a mold insulation layer on the first and second lower pad electrodes, first and second lower electrodes in the mold insulation layer, a dielectric layer on the first and second lower electrodes, an upper electrode on the dielectric layer, and an upper pad electrode connected to the upper electrode and including a different conductive material from the first and second lower pad electrodes. The first lower electrodes are on the first lower pad electrode, and the second lower electrodes are on the second lower pad electrode.

公开(公告)号：US09378811B2

公开(公告)日：2016-06-28

申请号：US14021412

申请日：2013-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Ju ,  Min Kyu Yang ,  Eunmi Kim ,  Seonggeon Park ,  Ingyu Baek

IPC: G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/76

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract translation: 可以通过在对所选择的存储器单元的操作期间将可选择的电阻非易失性存储器件中的所选存储单元的第一和第二电极上的形成电压施加到电阻性非易失性存储器的操作方法来提供。 形成电压可以是被限制为小于可变电阻膜和第一电极中的一个之间的选定存储单元中包括的绝缘膜的击穿电压的电压电平。 还公开了相关的装置和材料。

公开(公告)号：US12284838B2

公开(公告)日：2025-04-22

申请号：US17647348

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

IPC: H01L27/146 ,  H10F39/00 ,  H10F39/12 ,  H10F39/18 ,  H04N25/53 ,  H04N25/77

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.

公开(公告)号：US20250089280A1

公开(公告)日：2025-03-13

申请号：US18809515

申请日：2024-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Kumhyo Kang ,  Hyunmook Choi ,  Soonhyung Hong

IPC: H01G4/30

Abstract: An example semiconductor device includes a capacitor structure on a substrate. The capacitor structure includes a first electrode structure, a second electrode structure, and a capacitor dielectric layer. The first electrode structure includes first horizontal electrode portions apart from each other in a first direction perpendicular to the substrate and a first conductive pillar connected to each of the first horizontal electrode portions and extending in the first direction. The second electrode structure includes a second conductive pillar extending through the first horizontal electrode portions in the first direction and second horizontal electrode portions apart from each other in the first direction on a side wall of the second conductive pillar and alternately arranged with the first horizontal electrode portions. The capacitor dielectric layer is between the side wall of the second conductive pillar and the first horizontal electrode portions.

公开(公告)号：US11665452B2

公开(公告)日：2023-05-30

申请号：US16743222

申请日：2020-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Hyunchul Kim ,  Jinyong Choi

IPC: H01L27/00 ,  H04N25/771 ,  H01L49/02 ,  H01L27/146 ,  H04N25/75

CPC classification number: H04N25/771 ,  H01L27/1463 ,  H01L27/14609 ,  H01L27/14636 ,  H01L28/60 ,  H04N25/75

Abstract: An image sensor is provided and includes a photoelectric conversion layer, an integrated circuit layer, and a charge storage layer. The photoelectric conversion layer includes a pixel separation structure defining pixel regions, each including a photoelectric conversion region. The integrated circuit layer read charges from the photoelectric conversion regions. The charge storage layer includes a stacked capacitor for each of the pixel regions. The stacked capacitor includes a lower pad electrode, an intermediate pad electrode, an upper pad electrode, a contact plug connecting the upper pad electrode to the lower pad electrode, a first lower capacitor structure connected between the lower pad electrode and the intermediate pad electrode, and an upper capacitor structure connected between the intermediate pad electrode and the upper pad electrode. The upper capacitor structure is stacked on the lower capacitor structure to partially overlap the lower capacitor structure when viewed in plan view.

公开(公告)号：US20220231060A1

公开(公告)日：2022-07-21

申请号：US17647348

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

IPC: H01L27/146

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.

公开(公告)号：US09190143B2

公开(公告)日：2015-11-17

申请号：US13693093

申请日：2012-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheon An Lee ,  Donghun Kwak ,  Ingyu Baek

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C2213/71 ,  G11C2213/77

Abstract: A method of operating a variable resistance memory device comprises determining a level of an access voltage based on a number of rows or columns of a cell array, and supplying the access voltage having the determined level to the cell array.

Abstract translation: 操作可变电阻存储器件的方法包括：基于单元阵列的行数或列数来确定存取电压的电平，以及将具有所确定电平的存取电压提供给单元阵列。