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    Semiconductor device having fin-type field effect transistor and method of manufacturing the same
    12.
    发明授权
    Semiconductor device having fin-type field effect transistor and method of manufacturing the same 有权
    具有鳍式场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US09287401B2

    公开(公告)日：2016-03-15

    申请号：US14469615

    申请日：2014-08-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-Hwan Lee ,  Sangsu Kim ,  Changjae Yang

    IPC: H01L21/76 ,  H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/66795 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/785

    Abstract: A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.

    Abstract translation: 场效应晶体管包括翅片结构，其具有从衬底突出的侧壁和衬底上的器件隔离结构，所述器件隔离结构限定鳍结构的侧壁，其中鳍结构包括布置在 所述衬底和布置在所述缓冲半导体图案上的沟道图案，其中所述缓冲半导体图案具有与所述沟道图案不同的晶格常数，并且其中所述器件隔离结构包括间隙填充绝缘层，并且包括氧化阻挡层 设置在缓冲半导体图案和间隙填充绝缘层之间的图案。

    Apparatus and method for setting neighbor in mobile communication system
    13.
    发明授权
    Apparatus and method for setting neighbor in mobile communication system 有权
    移动通信系统中邻居设备的设备及方法

    公开(公告)号：US09232449B2

    公开(公告)日：2016-01-05

    申请号：US14223176

    申请日：2014-03-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gyu-Hyun Lim ,  Young-Hun Kim ,  Jae-Hwan Lee

    IPC: H04W36/00 ,  H04W84/04

    CPC classification number: H04W36/0083 ,  H04W84/045

    Abstract: A method and apparatus are provided for setting a neighbor in a Radio Network Controller (RNC) of a mobile communication system. The method includes receiving, from a Node B, a message indicating that a radio link is released; storing source cell information, when restoration of the radio link fails; receiving, from a User Equipment (UE), an RRC cell update message; storing target cell information included in the RRC cell update message; determining whether a neighbor of a source cell and a target cell is set, based on the source cell information and the target cell information; and setting the neighbor by using the source cell information and the target cell information if the neighbor is not set.

    Abstract translation: 提供了一种用于在移动通信系统的无线电网络控制器（RNC）中设置邻居的方法和装置。 该方法包括从节点B接收指示无线电链路被释放的消息; 存储源小区信息，当无线链路恢复失败时; 从用户设备（UE）接收RRC小区更新消息; 存储所述RRC小区更新消息中包含的目标小区信息; 基于所述源小区信息和所述目标小区信息来确定源小区和目标小区的邻居是否被设置; 并且如果没有设置邻居，则使用源小区信息和目标小区信息来设置邻居。

    Field effect transistor and method of fabricating the same
    16.
    发明授权
    Field effect transistor and method of fabricating the same 有权
    场效应晶体管及其制造方法

    公开(公告)号：US09595610B2

    公开(公告)日：2017-03-14

    申请号：US14723673

    申请日：2015-05-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： TaeYong Kwon ,  Shigenobu Maeda ,  David Seo ,  Jae-Hwan Lee

    IPC: H01L29/78 ,  H01L29/165 ,  H01L29/08 ,  H01L29/66

    CPC classification number: H01L29/7849 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/785

    Abstract: A MOSFET may be formed with a strain-inducing mismatch of lattice constants that improves carrier mobility. In exemplary embodiments a MOSFET includes a strain-inducing lattice constant mismatch that is not undermined by a recessing step. In some embodiments a source/drain pattern is grown without a recessing step, thereby avoiding problems associated with a recessing step. Alternatively, a recessing process may be performed in a way that does not expose top surfaces of a strain-relaxed buffer layer. A MOSFET device layer, such as a strain-relaxed buffer layer or a device isolation layer, is unaffected by a recessing step and, as a result, strain may be applied to a channel region without jeopardizing subsequent formation steps.

    Abstract translation: 可以形成MOSFET，其具有改善载流子迁移率的晶格常数的应变诱导失配。 在示例性实施例中，MOSFET包括不会被凹陷步骤破坏的应变诱导晶格常数失配。 在一些实施例中，源/漏图案在没有凹陷步骤的情况下生长，从而避免与凹陷步骤相关的问题。 或者，可以以不暴露应变松弛缓冲层的顶表面的方式执行凹陷处理。 诸如应变松弛缓冲层或器件隔离层的MOSFET器件层不受凹陷步骤的影响，结果可能将应变施加到沟道区而不会影响随后的形成步骤。

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