公开(公告)号：US20220415680A1

公开(公告)日：2022-12-29

申请号：US17664243

申请日：2022-05-20

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Jaeseong LEE ,  Kihoon CHOI ,  Hae-Won CHOI ,  Jihoon JEONG ,  Seohyun KIM ,  Young-Hoo KIM ,  Sangjine PARK ,  Kuntack LEE

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。

公开(公告)号：US20140360041A1

公开(公告)日：2014-12-11

申请号：US14246274

申请日：2014-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Yongsun KO ,  Kuntack LEE ,  Kyoungseob KIM ,  SeokHoon KIM ,  Jung-Min OH ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/02 ,  F26B25/06

CPC classification number: F26B25/06 ,  H01L21/67017 ,  H01L21/67109

Abstract: A substrate treating apparatus includes a fluid supply unit to supply a fluid to a chamber. The substrate is dried in the chamber using the fluid in a supercritical state. The fluid supply unit includes a storing tank to store the fluid and a conversion tank connected to the storing tank through a connection tube and to the chamber through a supply tube. The conversion tank includes a heater to heat the fluid.

Abstract translation: 基板处理装置包括向腔室供给流体的流体供给单元。 使用处于超临界状态的流体在室中干燥基板。 流体供给单元包括：储存容器，存储流体;以及转换槽，通过连接管连接到储存箱，并通过供给管连接到室。 转换罐包括用于加热流体的加热器。