LIQUID CHEMICAL SUPPLYING SYSTEM, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING METHOD
    1.
    发明申请
    LIQUID CHEMICAL SUPPLYING SYSTEM, SUBSTRATE PROCESSING SYSTEM, AND SUBSTRATE PROCESSING METHOD 审中-公开
    液体化学供应系统,基板处理系统和基板处理方法

    公开(公告)号:US20160368030A1

    公开(公告)日:2016-12-22

    申请号:US15142298

    申请日:2016-04-29

    Abstract: Disclosed is a substrate processing system including a nozzle to supply a chemical solution containing a mixture of first and second solutions onto a substrate loaded on a supporter of a process chamber, a chemical solution supplying system to supply the chemical solution to the nozzle, and a controller to control the chemical solution supplying system. The chemical solution supplying system may include a mixing tank mixing a plurality of chemicals to produce the first solution, a supply tank receiving the first solution from the mixing tank and producing the chemical solution, a connection line to connect the mixing tank to the supply tank, and a valve and a pump on the connection line. The pump is controlled to allow the first solution to be supplied into the supply tank at a predetermined supply amount per stroke.

    Abstract translation: 公开了一种基板处理系统,其包括:喷嘴,其将含有第一和第二溶液的混合物的化学溶液供应到负载在处理室的支撑体上的基板上;将化学溶液供给到喷嘴的化学溶液供给系统;以及 控制器控制化学溶液供应系统。 化学溶液供给系统可以包括混合多种化学品以制备第一溶液的混合罐,从混合罐接收第一溶液并产生化学溶液的供应罐,将混合罐连接到供应罐的连接管线 ,以及连接线上的阀和泵。 控制泵以允许第一溶液以每冲程以预定的供给量供应到供应罐中。

    METHOD OF RINSING AND DRYING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    2.
    发明申请
    METHOD OF RINSING AND DRYING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    半导体器件的研磨和干燥方法及使用该半导体器件制造半导体器件的方法

    公开(公告)号:US20150287590A1

    公开(公告)日:2015-10-08

    申请号:US14669354

    申请日:2015-03-26

    Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

    Abstract translation: 提供了一种冲洗和干燥半导体器件的方法,包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中,使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量%的浓度; 并排出超临界二氧化碳,使得干燥室保持在大气压下,以干燥形成图案的基板。

    SUBSTRATE TREATING APPARATUS
    3.
    发明申请
    SUBSTRATE TREATING APPARATUS 审中-公开
    基板处理装置

    公开(公告)号:US20140360041A1

    公开(公告)日:2014-12-11

    申请号:US14246274

    申请日:2014-04-07

    CPC classification number: F26B25/06 H01L21/67017 H01L21/67109

    Abstract: A substrate treating apparatus includes a fluid supply unit to supply a fluid to a chamber. The substrate is dried in the chamber using the fluid in a supercritical state. The fluid supply unit includes a storing tank to store the fluid and a conversion tank connected to the storing tank through a connection tube and to the chamber through a supply tube. The conversion tank includes a heater to heat the fluid.

    Abstract translation: 基板处理装置包括向腔室供给流体的流体供给单元。 使用处于超临界状态的流体在室中干燥基板。 流体供给单元包括:储存容器,存储流体;以及转换槽,通过连接管连接到储存箱,并通过供给管连接到室。 转换罐包括用于加热流体的加热器。

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