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公开(公告)号：US20150311258A1
公开(公告)日：2015-10-29
申请号：US14566319
申请日：2014-12-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyu Sik KIM , Satoh RYUICHI , Hong-Seok LEE
CPC classification number: H01L27/307 , H01L27/14603 , H01L27/14621 , H01L27/14643 , H01L27/14645 , H01L27/14647 , H01L51/442
Abstract: Image sensors, and electronic devices including the same, include a first photo-sensing device sensing light in a full visible to near infrared ray region, a second photo-sensing device sensing light in a blue wavelength region, a third photo-sensing device sensing light in a red wavelength region, and a fourth photo-sensing device sensing light in a green wavelength region. At least one of the first photo-sensing device, the second photo-sensing device, the third photo-sensing device, and the fourth photo-sensing device includes a pair of light-transmitting electrodes facing each other, and a photoactive layer between the light-transmitting electrodes. The photoactive layer includes an organic light-absorbing material.
Abstract translation: 图像传感器和包括其的电子设备包括感测完全可见到近红外线区域中的光的第一光感测装置，感测蓝色波长区域中的光的第二感光装置，感测第三感光装置的第三感光装置 在红色波长区域中的光，以及感测绿色波长区域中的光的第四感光装置。 第一感光装置，第二感光装置，第三感光装置和第四感光装置中的至少一个包括彼此面对的一对透光电极，以及在第 透光电极。 光活性层包括有机光吸收材料。
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公开(公告)号：US20150162548A1
公开(公告)日：2015-06-11
申请号：US14521840
申请日：2014-10-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seon-Jeong LIM , Kyung Bae PARK , Dong-Seok LEEM , Moon Gyu HAN , Kyu Sik KIM , Takkyun RO , Kwang Hee LEE , Yong Wan JIN , Chul Joon HEO
CPC classification number: H01L51/0072 , H01L27/307 , H01L51/001 , H01L51/008 , H01L51/4253 , H01L2251/308
Abstract: Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.
Abstract translation: 公开了一种有机光电子器件，其包括彼此面对的第一电极和第二电极以及置于第一电极和第二电极之间的有源层，其中有源层包括由式C22R1-R12O2N2表示的p型半导体化合物和 在约500nm至约600nm的波长区域具有最大吸收峰的n型半导体化合物和包括该有机光电子器件的图像传感器。
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公开(公告)号：US20150041940A1
公开(公告)日：2015-02-12
申请号：US14174211
申请日：2014-02-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang LEE , Kyu Sik KIM , Yong Wan JIN
IPC: H01L31/0232
CPC classification number: H01L27/14625 , G02B27/1013 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L31/02327
Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
Abstract translation: 图像传感器包括与感测第一波长区域中的光的至少一个第一感光装置和感测比第一波长区域短的第二波长区域中的光的至少一个第二感光装置集成的半导体基板，光电装置 包括彼此面对的一对电极和电极之间的光吸收层，所述光电装置选择性地吸收第一波长区域和第二波长区域之间的第三波长区域中的光，以及半导体基板和光电二极管之间的纳米结构体 装置，纳米结构体包括具有不同光路的至少两个部分。
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公开(公告)号：US20140239278A1
公开(公告)日：2014-08-28
申请号：US14186075
申请日：2014-02-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae PARK , Kyu Sik KIM , Kwang Hee LEE , Dong-Seok LEEM , Seon-Jeong LIM
Abstract: Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.
Abstract translation: 公开了一种光电子器件，其包括：第一电极，其包括第一金属; 设置在所述第一电极和第二电极之间的有源层; 以及设置在所述第一电极和所述有源层之间的扩散阻挡层; 所述扩散阻挡层包括第二金属，其中所述第二金属具有低于所述第一金属的热扩散率的热扩散率，并且其中所述第一电极和所述扩散阻挡层被配置为透射光;以及图像传感器，包括 光电子器件。
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15.发明申请公开(公告)号：US20190157351A1
公开(公告)日：2019-05-23
申请号：US16251600
申请日：2019-01-18
Applicant: Samsung Electronics Co., Ltd. , SNU R&DB Foundation
Inventor： Kyu Sik KIM , Jang-Joo Kim , Gae Hwang Lee , Ryuichi Satoh , Yong Wan Jin , Dae-Ho Kim
IPC: H01L27/30
Abstract: Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.
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Patent Agency Ranking
公开(公告)号：US20170280575A1
公开(公告)日：2017-09-28
申请号：US15512275
申请日：2015-08-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyu Sik KIM , Gi Eun LEE
CPC classification number: H05K5/065 , D06F37/20 , D06F39/005 , H05K1/02 , H05K3/28 , H05K5/069 , H05K7/06 , H05K10/00 , H05K2201/0195 , H05K2201/09909 , H05K2203/0588 , H05K2203/1147
Abstract: A printed circuit board (PCB) having an improved waterproof structure for preventing corrosion of a substrate is disclosed. A plurality of screen-printed protrusions is provided at the PCB surface. the plurality of protrusions allow water to be formed in waterdrops so that the waterdrops can flow to the outside of the PCB. The PCB is arranged to have a tilted structure for facilitating discharge of the water. The tilted structure discharges waterdrops to a lower side of the PCB. The PCB and a PCB assembly having the same are applicable to electronic appliances such as a washing machine.
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公开(公告)号：US20170179179A1
公开(公告)日：2017-06-22
申请号：US15449026
申请日：2017-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang LEE , Kyu Sik KIM , Yong Wan JIN
IPC: H01L27/146 , G02B27/10
CPC classification number: H01L27/14625 , G02B27/1013 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/307 , H01L31/02327
Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
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18.发明申请公开(公告)号：US20160197122A1
公开(公告)日：2016-07-07
申请号：US14794532
申请日：2015-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Satoh RYUICHI , Kyu Sik KIM , Woo Young YANG , Yeon-Hee KIM , Yong-Young PARK , Xianyu WENXU , Chang Seung LEE , Yong Wan JIN
CPC classification number: H01L27/307 , H01L51/107 , H01L2251/303
Abstract: Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.
Abstract translation: 包括有机光电子器件的有机光电子器件和图像传感器包括在光入射侧的第一透光电极，与第一透光电极相对的第二透光电极，在第一和第二光之间的有源层 - 透射电极和在第一透光电极上的紫外（UV）光线阻挡层，其中紫外线（UV）光线阻挡层包括至少一种具有小于或等于约75％的透光率的金属氧化物，用于 小于或等于约380nm的光。
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公开(公告)号：US20140346466A1
公开(公告)日：2014-11-27
申请号：US14089987
申请日：2013-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwang Hee LEE , Dong-Seok LEEM , Kyu Sik KIM , Kyung Bae PARK
IPC: H01L51/00
CPC classification number: H01L51/0072 , H01L27/307 , H01L51/0059 , H01L51/008 , H01L51/4253
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 or Chemical Formula 2, and a compound represented by Chemical Formula 3.
Abstract translation: 有机光电子器件包括彼此面对的第一电极和第二电极，以及在第一电极和第二电极之间的有源层，活性层包含由化学式1或化学式2表示的化合物和由 化学式3。
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公开(公告)号：US20170250226A1
公开(公告)日：2017-08-31
申请号：US15592686
申请日：2017-05-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyu Sik KIM , Satoh Ryuichi , Gae Hwang Lee
CPC classification number: H01L27/307 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/286 , H01L31/022475 , H01L2251/306 , H01L2251/308
Abstract: Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.
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