公开(公告)号：US11860777B2

公开(公告)日：2024-01-02

申请号：US16930429

申请日：2020-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduk Lee ,  Young-Seop Shim

IPC: G06F12/02 ,  G06F12/0873 ,  G06F12/0882 ,  G06F3/06 ,  G06F11/30

CPC classification number: G06F12/0253 ,  G06F3/0646 ,  G06F11/3037 ,  G06F11/3058 ,  G06F12/0246 ,  G06F12/0873 ,  G06F12/0882

Abstract: A memory management method of a storage device including: programming write-requested data in a memory block; counting an elapse time from a time when a last page of the memory block was programmed with the write-requested data; triggering a garbage collection of the storage device when the elapse time exceeds a threshold value; and programming valid data collected by the garbage collection at a first clean page of the memory block.

公开(公告)号：US20220413701A1

公开(公告)日：2022-12-29

申请号：US17583713

申请日：2022-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youhwan Kim ,  Jihwa Lee ,  Kyungduk Lee ,  Hosung Ahn

IPC: G06F3/06

Abstract: A storage device performing a secure erase and an operating method thereof are provided. The storage device may include a controller configured to control a non-volatile memory device including a plurality of blocks. The controller includes a secure erase control logic configured to control a secure erase operation on the plurality of blocks and perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks such that the secure erase operation on the first block is skipped based on a result of determining at least one selected from a secure erase state and/or a deterioration state of the first block.

公开(公告)号：US10388395B2

公开(公告)日：2019-08-20

申请号：US15837841

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduk Lee ,  Young-Seop Shim

IPC: G11C29/44 ,  G11C29/38 ,  G11C29/00

Abstract: A storage device includes a nonvolatile memory device that detects loop counts of state pass loops of at least one target state of a plurality of target states, and generates state loop count information (SLCI) indicative of whether a program operation is successful based on the detected loop count of the state pass loops, during a program operation of selected memory cells; and a storage controller that makes a request to the nonvolatile memory device for the state loop count information in response to detection of an operation condition or an external command, and assigns a memory block in which the selected memory cells are included as a bad block based on the state loop count information from the nonvolatile memory device.

公开(公告)号：US12229418B2

公开(公告)日：2025-02-18

申请号：US18101232

申请日：2023-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduk Lee ,  Youn-Soo Cheon ,  Daehyeon Jo

IPC: G06F12/00 ,  G06F3/06

Abstract: Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.

公开(公告)号：US12164766B2

公开(公告)日：2024-12-10

申请号：US17897371

申请日：2022-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongsung Na ,  Youngseop Shim ,  Kyungduk Lee

IPC: G06F12/00 ,  G06F3/06

Abstract: A storage device includes a communication circuit and a controller. The controller is configured to transmit log data to a host device through the communication circuit in response to receiving a first signal from the host device, receive a second signal, including an operation condition of an algorithm of the storage device, from the host device through the communication circuit, and change the operation condition of the algorithm on the basis of the second signal, wherein the algorithm includes one or more instructions for controlling an operation of the storage device.

公开(公告)号：US12147706B2

公开(公告)日：2024-11-19

申请号：US17932073

申请日：2022-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungduk Lee ,  Younsoo Cheon

IPC: G06F3/06

Abstract: A storage device includes nonvolatile memories each including an internal temperature sensor; a memory controller configured having a plurality of operation commands defined for different temperature and an external temperature sensor. The memory controller obtains an external temperature value from the external temperature sensor in a first cycle, obtains an internal temperature value of the internal temperature sensor in a second cycle different from the first cycle, determines a temperature range of a target nonvolatile memory based on the external temperature value when a difference between the external temperature value and the internal temperature value is equal to or less than a first threshold value, to determine the temperature range based on the internal temperature value when the difference exceeds the first threshold, and to provide an operation command corresponding to the temperature range to the target nonvolatile memory.

公开(公告)号：US11869598B2

公开(公告)日：2024-01-09

申请号：US17579902

申请日：2022-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihwa Lee ,  Youhwan Kim ,  Kyungduk Lee ,  Hosung Ahn

IPC: G11C16/16 ,  G11C16/10 ,  G11C16/08 ,  G11C16/30 ,  G11C16/28

CPC classification number: G11C16/16 ,  G11C16/08 ,  G11C16/105 ,  G11C16/28 ,  G11C16/30

Abstract: A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.

公开(公告)号：US20230418511A1

公开(公告)日：2023-12-28

申请号：US18139719

申请日：2023-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon Yoo ,  Kyungduk Lee

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0679 ,  G06F3/0604

Abstract: A storage device is provided. The storage device includes: a nonvolatile memory including memory cells divided into first and second memory cell groups; a memory controller; and a physically unclonable function (PUF) circuit configured to generate PUF data, based on an output of the second memory cell group, by excluding, from the output of the second memory cell group, outputs of a first exclusion area, a second exclusion area, and a third exclusion area, The first exclusion area has a threshold voltage equal to or greater than a first read level and less than a second read level, the second exclusion area has a threshold voltage less than a third read level that is less than the first read level, and the third exclusion area has a threshold voltage equal to or greater than a fourth read level that is greater than the second read level.

公开(公告)号：US20220415404A1

公开(公告)日：2022-12-29

申请号：US17579902

申请日：2022-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihwa Lee ,  Youhwan Kim ,  Kyungduk Lee ,  Hosung Ahn

IPC: G11C16/16 ,  G11C16/10 ,  G11C16/28 ,  G11C16/30 ,  G11C16/08

Abstract: A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.

公开(公告)号：US20220121544A1

公开(公告)日：2022-04-21

申请号：US17563662

申请日：2021-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungduk Lee ,  Younsoo Cheon ,  Jihwa Lee

IPC: G06F11/30 ,  G06F12/0882 ,  G06F12/02 ,  G06F11/07 ,  G06F3/06

Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.