公开(公告)号：US09941443B2

公开(公告)日：2018-04-10

申请号：US15063150

申请日：2016-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Sub Lee ,  Jung Sub Kim ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/00 ,  H01L33/02 ,  H01L33/42 ,  H01L33/48 ,  H01L33/52

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

公开(公告)号：US09312439B2

公开(公告)日：2016-04-12

申请号：US14454536

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Jung Sub Kim ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/20 ,  H01L33/30 ,  H01L33/14 ,  H01L33/18 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。

公开(公告)号：US09184335B2

公开(公告)日：2015-11-10

申请号：US14153442

申请日：2014-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Wook Hwang ,  Sam Mook Kang ,  Han Kyu Seong

IPC: H01L33/00 ,  H01L33/24

CPC classification number: H01L33/005 ,  H01L33/24

Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 一种制造半导体发光器件的多个发光纳米结构的方法，包括：在第一种类的半导体晶种层上形成多个第一导电型半导体芯，每个第一导电型半导体芯通过绝缘膜上的开口形成; 在每个第一导电型半导体芯上形成有源层; 在每个有源层上形成使用掩模图形的第二导电类型半导体层以覆盖有源层，以形成多个发光纳米结构; 以及在所述多个发光纳米结构上形成电极。