公开(公告)号：US10741737B2

公开(公告)日：2020-08-11

申请号：US16018542

申请日：2018-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi Hyun Kim ,  Young Hwan Park ,  Sam Mook Kang ,  Joo Sung Kim ,  Jong Uk Seo ,  Young Jo Tak

IPC: H01L33/62 ,  H01L33/64 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

公开(公告)号：US09184343B2

公开(公告)日：2015-11-10

申请号：US14455853

申请日：2014-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geon Wook Yoo ,  Jae Hyeok Heo ,  Sam Mook Kang ,  Han Kyu Seong

IPC: H01L51/50 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/04 ,  H01L33/08 ,  H01L33/64

CPC classification number: H01L33/04 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/64

Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

Abstract translation: 纳米结构半导体发光器件可以包括包括多个发光纳米结构的衬底，其包括依次形成在纳米孔上的包括第一导电类型半导体，有源层和第二导电类型半导体层的纳米孔。 发光区域可以包括第一区域和第二区域。 设置在第一区域中的发光纳米结构之间的间隔可以不同于设置在第二区域中的发光纳米结构之间的间隔。 第一区域可以比第二区域更靠近非发光区域，并且可以在发光纳米结构之间具有比第二区域更小的间隔。 还公开了实施这种纳米结构半导体发光器件的系统和制造方法。

公开(公告)号：US09947530B2

公开(公告)日：2018-04-17

申请号：US15399898

申请日：2017-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Jun Youn Kim ,  Young Soo Park

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/304 ,  H01L21/30604

Abstract: A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.

公开(公告)号：US09899565B2

公开(公告)日：2018-02-20

申请号：US15183869

申请日：2016-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Jun Youn Kim ,  Young Soo Park ,  Misaichi Takeuchi

IPC: H01L33/00 ,  H01L21/683 ,  H01L21/306 ,  H01L21/78 ,  H01L21/02

CPC classification number: H01L33/0075 ,  H01L21/02005 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.

公开(公告)号：US09461199B2

公开(公告)日：2016-10-04

申请号：US14752814

申请日：2015-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hyeok Heo ,  Jung Sub Kim ,  Young Jin Choi ,  Jin Sub Lee ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun

IPC: H01L31/00 ,  H01L33/06 ,  H01L27/15 ,  H01L33/32 ,  H01L33/62 ,  H01L33/24 ,  H01L33/00 ,  H05B33/08

CPC classification number: H01L33/06 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05B33/0803 ,  H01L2924/00014

Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.

Abstract translation: 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。

公开(公告)号：US10600645B2

公开(公告)日：2020-03-24

申请号：US15662425

申请日：2017-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Hyun Kim ,  Sam Mook Kang ,  Jun Youn Kim ,  Young Jo Tak

IPC: H01L21/02 ,  C30B25/18 ,  C30B25/04 ,  C30B25/02 ,  C30B29/40 ,  H01L21/78 ,  B08B3/02 ,  B08B3/12

Abstract: A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.

公开(公告)号：US09666754B2

公开(公告)日：2017-05-30

申请号：US15130379

申请日：2016-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Hwan Park ,  Sam Mook Kang ,  Jun Youn Kim ,  Mi Hyun Kim ,  Joo Sung Kim ,  Young Jo Tak

IPC: H01L21/30 ,  H01L21/46 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/007 ,  F21K9/237 ,  F21K9/275 ,  F21S41/141 ,  F21S43/14 ,  F21V23/005 ,  F21Y2113/10 ,  F21Y2115/10 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L33/12 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.

公开(公告)号：US09269865B2

公开(公告)日：2016-02-23

申请号：US14516470

申请日：2014-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Myung Chun ,  Jung Sub Kim ,  Jin Sub Lee ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层，掩模层，设置在基底层上并具有暴露基底部分的多个开口，多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔，有源层和第二导电型半导体层。

公开(公告)号：US10784405B2

公开(公告)日：2020-09-22

申请号：US16038368

申请日：2018-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Jo Tak ,  Sam Mook Kang ,  Mi Hyun Kim ,  Joo Sung Kim ,  Young Hwan Park ,  Jong Uk Seo

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/04 ,  H01L33/20 ,  H01L33/40 ,  H01L33/10

Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

公开(公告)号：US20190207057A1

公开(公告)日：2019-07-04

申请号：US16032222

申请日：2018-07-11

Applicant: Samsung Electronics Co., Ltd

Inventor： Sam Mook Kang ,  Joo Sung Kim ,  Jong Uk Seo ,  Young Jo Tak

IPC: H01L33/00 ,  H01L33/12

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/12 ,  H01L33/22

Abstract: A method of manufacturing a semiconductor light emitting device may include: forming a buffer layer on a substrate; forming a protective layer on the buffer layer; performing heat treatment on a stacked structure of the substrate, the buffer layer, and the protective layer; removing the protective layer; and forming a light emitting structure on the buffer layer.