Nanostructure semiconductor light-emitting device
    3.
    发明授权
    Nanostructure semiconductor light-emitting device 有权
    纳米结构半导体发光器件

    公开(公告)号:US09461199B2

    公开(公告)日:2016-10-04

    申请号:US14752814

    申请日:2015-06-26

    Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.

    Abstract translation: 提供了一种纳米结构半导体发光器件,其包括由第一导电型半导体形成的基极层,设置在基底层上并具有多个开口的绝缘层,以及多个发光纳米结构, 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔,以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成,并分成n组(其中n为2以上的整数),每组具有至少两个发光纳米结构。 纳米孔的直径,高度和间距中的至少一个是不同的,使得有源层通过组发射具有不同波长的光。

    Semiconductor light emitting device and manufacturing method thereof
    8.
    发明授权
    Semiconductor light emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US09553235B2

    公开(公告)日:2017-01-24

    申请号:US14627721

    申请日:2015-02-20

    Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

    Abstract translation: 半导体发光器件的制造方法可以包括以下步骤:形成掩模层和模具层,所述模具层具有暴露基底层的部分的多个开口,形成多个第一导电型半导体芯,每个第一导电型半导体芯包括主体部分延伸穿过 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分,并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域,使得尖端部分的顶点位于主体部分的中心垂直轴线上,去除模具层,并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。

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