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公开(公告)号:US09842960B2
公开(公告)日:2017-12-12
申请号:US14867659
申请日:2015-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jae Hyeok Heo , Jin Sub Lee , Young Jin Choi , Hyun Seong Kum , Ji Hye Yeon , Dae Myung Chun , Jung Sub Kim , Han Kyu Seong
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.
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公开(公告)号:US11296260B2
公开(公告)日:2022-04-05
申请号:US16438948
申请日:2019-06-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jin Sub Lee , Deuk Seok Chung , Hye Seok Noh , Young Jin Choi
Abstract: A light emitting device package including a partition structure having first and second surfaces, and first to third light emission windows penetrating through the first and second surfaces, a cell array including first to third light emitting devices on the first surface of the partition structure and overlapping the first to third light emission windows, each of the first to third light emitting devices including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, first and second wavelength conversion portions filling interiors of the first and second light emission windows, and having a meniscus-shaped interfaces, a first encapsulating portion including a light-transmissive organic film layer that fills the third light emission window and covers the first and second wavelength conversion portions, and a second encapsulating portion covering the first and second encapsulating portions and including a light-transmissive inorganic film layer.
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公开(公告)号:US10707393B2
公开(公告)日:2020-07-07
申请号:US15995546
申请日:2018-06-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong Gun Lee , Yong Il Kim , Han Kyu Seong , Ji Hye Yeon , Jin Sub Lee , Young Jin Choi
Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.
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公开(公告)号:US09966369B2
公开(公告)日:2018-05-08
申请号:US15802493
申请日:2017-11-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号:US09461199B2
公开(公告)日:2016-10-04
申请号:US14752814
申请日:2015-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jae Hyeok Heo , Jung Sub Kim , Young Jin Choi , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Dae Myung Chun
CPC classification number: H01L33/06 , H01L27/153 , H01L33/0025 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H05B33/0803 , H01L2924/00014
Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.
Abstract translation: 提供了一种纳米结构半导体发光器件,其包括由第一导电型半导体形成的基极层,设置在基底层上并具有多个开口的绝缘层,以及多个发光纳米结构, 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔,以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成,并分成n组(其中n为2以上的整数),每组具有至少两个发光纳米结构。 纳米孔的直径,高度和间距中的至少一个是不同的,使得有源层通过组发射具有不同波长的光。
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公开(公告)号:US09257605B2
公开(公告)日:2016-02-09
申请号:US14790047
申请日:2015-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yeon Woo Seo , Jung-Sub Kim , Young Jin Choi , Denis Sannikov , Han Kyu Seong , Dae Myung Chun , Jae Hyeok Heo
CPC classification number: H01L33/24 , F21K9/232 , F21S41/147 , F21S45/43 , F21S45/47 , F21Y2115/10 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.
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公开(公告)号:US10714667B2
公开(公告)日:2020-07-14
申请号:US16020071
申请日:2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hye Seok Noh , Young Jin Choi , Yong Il Kim , Han Kyu Seong , Dong Gun Lee , Jin Sub Lee
IPC: H01L33/00 , H01L33/62 , H01L33/50 , H04N5/225 , H01L33/26 , H01L33/56 , H01L27/15 , H01L33/40 , H01L25/075
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号:US10573628B2
公开(公告)日:2020-02-25
申请号:US15971196
申请日:2018-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号:US09825016B1
公开(公告)日:2017-11-21
申请号:US15386425
申请日:2016-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号:US09269865B2
公开(公告)日:2016-02-23
申请号:US14516470
申请日:2014-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Myung Chun , Jung Sub Kim , Jin Sub Lee , Sam Mook Kang , Yeon Woo Seo , Han Kyu Seong , Young Jin Choi , Jae Hyeok Heo
CPC classification number: H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.
Abstract translation: 纳米结构半导体发光器件可以包括第一导电型半导体基底层,掩模层,设置在基底层上并具有暴露基底部分的多个开口,多个发光纳米结构设置在多个开口中 以及设置在掩模层上的多晶硅电流抑制层。 多晶硅电流抑制层的至少一部分设置在第二导电型半导体层的下方。 每个发光纳米结构包括第一导电型半导体纳米孔,有源层和第二导电型半导体层。
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