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公开(公告)号：US09660139B2
公开(公告)日：2017-05-23
申请号：US15018026
申请日：2016-02-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Geon Wook Yoo , Kyung Wook Hwang , Yong Min Kim , Sung Hyun Sim
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/0025 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/24 , H01L33/44 , H01L33/52 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
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2.发明授权公开(公告)号：US09142722B2
公开(公告)日：2015-09-22
申请号：US14172552
申请日：2014-02-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Woong Kim , Kyung Wook Hwang
CPC classification number: H01L33/24 , H01L33/38 , H01L33/382 , H01L2224/13
Abstract: There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures.
Abstract translation: 提供了一种发光器件，其包括在第一导电型半导体基底层上彼此间隔开的多个纳米级发光结构，所述多个纳米级发光结构各自包括第一导电型半导体芯，有源层 和第二导电型半导体层，以及连接到第二导电型半导体层的电极。 所述电极设置在所述多个纳米级发光结构中的第一纳米级发光结构和第二纳米级发光结构之间，并且所述电极具有低于所述多个纳米级发光结构的高度的高度。
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公开(公告)号：US09780260B2
公开(公告)日：2017-10-03
申请号：US14838430
申请日：2015-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook Hwang , Han Kyu Seong , Nam Goo Cha
CPC classification number: H01L33/24 , H01L33/005 , H01L33/08 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
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公开(公告)号：US09142721B2
公开(公告)日：2015-09-22
申请号：US14152465
申请日：2014-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook Hwang , Han Kyu Seong , Nam Goo Cha
CPC classification number: H01L33/24 , H01L33/005 , H01L33/08 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.
Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。
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公开(公告)号：US09997668B2
公开(公告)日：2018-06-12
申请号：US15365102
申请日：2016-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook Hwang , Joong Kon Son
CPC classification number: H01L33/10 , H01L33/0025 , H01L33/007 , H01L33/12 , H01L33/24 , H01L33/32 , H01L33/42 , H01L33/46
Abstract: A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09978907B2
公开(公告)日：2018-05-22
申请号：US15147039
申请日：2016-05-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung Sub Kim , Dong Hyun Lee , Jin Sub Lee , Kyung Wook Hwang , In Su Shin , Eui Joon Yoon , Gun Do Lee , Jeong Hwan Jang
Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≤x+y≤1, 0≤y
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公开(公告)号：US09537049B2
公开(公告)日：2017-01-03
申请号：US14929612
申请日：2015-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Wook Hwang
CPC classification number: H01L33/08 , H01L33/18 , H01L33/24 , H01L33/46 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: There is provided a nanostructure semiconductor light emitting device may including: a base layer formed of a first conductivity-type semiconductor, an insulating layer formed on an upper surface of the base layer and including a first region having a plurality of openings and a plurality of second regions positioned in the plurality of openings and spaced apart from the first region, dielectric nanocores disposed in the plurality of second regions, and a plurality of light emitting nanostructures each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the dielectric nanocores.
Abstract translation: 提供了一种纳米结构半导体发光器件，其可以包括：由第一导电型半导体形成的基极层，形成在基底层的上表面上的绝缘层，并且包括具有多个开口的第一区域和多个 位于所述多个开口中并与所述第一区间隔开的第二区域，设置在所述多个第二区域中的电介质纳米孔，以及多个发光纳米结构，每个包含第一导电类型半导体层，有源层和第二区域 依次设置在电介质纳米孔上的导电型半导体层。
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公开(公告)号：US09490395B2
公开(公告)日：2016-11-08
申请号：US14630431
申请日：2015-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung Wook Hwang , Jung Sung Kim , Nam Goo Cha
Abstract: A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer.
Abstract translation: 纳米结构半导体发光器件包括由第一导电型半导体形成的基极层，设置在基底层上并包括多个开口的第一材料层，多个发光纳米结构，每个发光纳米结构延伸穿过每个 并且包括由依次设置在纳米孔上的第一导电型半导体，有源层和第二导电型半导体外壳层形成的纳米孔，设置在第一材料层上的填充层，其中填充物 多个发光纳米结构的多个发光纳米结构体的一部分与多个发光纳米结构体的一部分之间的填充层由填充层露出，第二导电型半导体延伸层设置在填充层上并覆盖 所述多个发光纳米结构中的每一个以及设置在所述第二配线上的接触电极层 导电型半导体延伸层。
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公开(公告)号：US09287446B2
公开(公告)日：2016-03-15
申请号：US14605551
申请日：2015-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon Wook Yoo , Kyung Wook Hwang , Yong Min Kim , Sung Hyun Sim
CPC classification number: H01L33/06 , B82Y20/00 , H01L33/0025 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/24 , H01L33/44 , H01L33/52 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, a plurality of light emitting nanostructures, and a contact electrode. The base layer is formed of a first conductivity-type semiconductor material. The insulating layer is disposed on the base layer. Each light emitting nanostructure is disposed in a respective opening of a plurality of openings in the base layer, and includes a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The contact electrode is spaced apart from the insulating layer and is disposed on a portion of the second conductivity-type semiconductor layer. A tip portion of the light emitting nanostructure has crystal planes different from those on side surfaces of the light emitting nanostructure.
Abstract translation: 纳米结构半导体发光器件包括基底层，绝缘层，多个发光纳米结构和接触电极。 基层由第一导电型半导体材料形成。 绝缘层设置在基底层上。 每个发光纳米结构设置在基层中的多个开口的相应开口中，并且包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在第一导电类型半导体材料上的有源层和第二导电类型半导体层 纳米孔的表面。 接触电极与绝缘层隔开并设置在第二导电型半导体层的一部分上。 发光纳米结构的尖端部分具有与发光纳米结构的侧表面不同的晶面。
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公开(公告)号：US09184335B2
公开(公告)日：2015-11-10
申请号：US14153442
申请日：2014-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Wook Hwang , Sam Mook Kang , Han Kyu Seong
CPC classification number: H01L33/005 , H01L33/24
Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures.
Abstract translation: 提供了一种半导体发光器件及其制造方法。 一种制造半导体发光器件的多个发光纳米结构的方法，包括：在第一种类的半导体晶种层上形成多个第一导电型半导体芯，每个第一导电型半导体芯通过绝缘膜上的开口形成; 在每个第一导电型半导体芯上形成有源层; 在每个有源层上形成使用掩模图形的第二导电类型半导体层以覆盖有源层，以形成多个发光纳米结构; 以及在所述多个发光纳米结构上形成电极。
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