Circuit boards and semiconductor packages including the same

    公开(公告)号:US10141255B2

    公开(公告)日:2018-11-27

    申请号:US15994004

    申请日:2018-05-31

    Abstract: A circuit board and a semiconductor packages therewith are disclosed. The circuit board may include a top surface, on which at least one semiconductor chip is mounted, and a bottom surface, to which at least one outer terminal is coupled. The top surface may include an upper window region, on which an upper conductive pattern electrically connected to the semiconductor chip is provided, and the bottom surface may include a lower window region, on which a lower conductive pattern electrically connected to the upper conductive pattern is provided. Here, a ratio of an area of the lower conductive pattern to an area of the upper conductive pattern may be less than or equal to 1.5.

    Method for dynamically recommending catalog and electronic device thereof

    公开(公告)号:US11605113B2

    公开(公告)日:2023-03-14

    申请号:US16727074

    申请日:2019-12-26

    Abstract: An electronic device and method are disclosed. The device includes a communication module, at least one processor operatively coupled to the communication module, and at least one memory. The processor implements the method, including: retrieving a plurality of service categories, each service category listing services providable to a user using one or more smart devices, and each service category associated with a service capability list of one or more elements indicating whether each service category is to be recommended to the user, receiving user-related information from the external device through the communication module and updating a service capability list of a user using the user-related information, and selecting a service category from among the retrieved plurality of service categories to be recommended to the user by comparing the updated service capability list of the user with the service capability lists associated with each of the plurality of service categories.

    SLURRY COMPOSITIONS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME
    14.
    发明申请
    SLURRY COMPOSITIONS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME 审中-公开
    浆料组合物和使用其制造半导体器件的方法

    公开(公告)号:US20160141182A1

    公开(公告)日:2016-05-19

    申请号:US14886161

    申请日:2015-10-19

    CPC classification number: C09G1/02 H01L21/30625 H01L21/823821 H01L29/1054

    Abstract: Provided are slurry compositions for polishing a germanium-containing layer and methods of fabricating a semiconductor device using the same. The slurry composition may include a polishing particle, an oxidizing agent, a polishing accelerator, and a selectivity control agent. The oxidizing agent may include at least one selected from the group consisting of superoxide, dioxygenyl, ozone, ozonide, chlorite, chlorate, perchlorate, halogen compounds, nitric acid, nitrate, hypochlorite, hypohalite, and peroxide.

    Abstract translation: 提供了用于研磨含锗层的浆料组合物和使用其的半导体器件的制造方法。 浆料组合物可以包括抛光颗粒,氧化剂,抛光促进剂和选择性控制剂。 氧化剂可以包括选自超氧化物,二氧基,臭氧,臭氧化物,亚氯酸盐,氯酸盐,高氯酸盐,卤素化合物,硝酸,硝酸盐,次氯酸盐,次卤酸盐和过氧化物中的至少一种。

    SEMICONDUCTOR DEVICE
    15.
    发明申请

    公开(公告)号:US20250087579A1

    公开(公告)日:2025-03-13

    申请号:US18660712

    申请日:2024-05-10

    Inventor: Sanghyun Park

    Abstract: A semiconductor device includes an insulating structure, a first interconnection pattern having a first through-hole and disposed on an upper surface of the insulating structure, and a conductive via passing through the first through-hole of the first interconnection pattern and contacting the first interconnection pattern on an internal sidewall of the first through-hole, in which the first interconnection pattern includes a material having first resistivity in a first direction, parallel to the upper surface of the insulating structure, and second resistivity in a second direction, different from the first direction and not parallel to the upper surface of the insulating structure, and the first resistivity is lower than the second resistivity.

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