公开(公告)号：US20240014284A1

公开(公告)日：2024-01-11

申请号：US18195657

申请日：2023-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin SONG ,  Myungil KANG ,  Hyojin KIM ,  Doyoung CHOI

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/786 ,  H01L29/775 ,  H01L23/528 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/42392 ,  H01L27/092 ,  H01L29/78696 ,  H01L29/775 ,  H01L23/5283 ,  H01L29/41775 ,  H01L29/0673

Abstract: A semiconductor device includes an active region on a substrate; channel layers on the active region spaced apart from each other and including lower and upper channel layers; an intermediate insulating layer between an uppermost lower channel layer and a lowermost upper channel layer; a gate intersecting the active region and including a lower gate electrode surrounding the lower channel layers and an upper gate electrode surrounding the upper channel layers; an insulating pattern between the upper and lower gate electrodes on a side of the intermediate insulating layer; source/drain regions on at least one side of the gate, and including lower source/drain regions connected to the lower channel layers and upper source/drain regions connected to the upper channel layers; and a contact plug including a horizontal extension portion connected to the lower source/drain regions, and a vertical extension portion connected to the horizontal extension portion.

公开(公告)号：US20230343782A1

公开(公告)日：2023-10-26

申请号：US18063937

申请日：2022-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin SONG ,  Minchan GWAK ,  Doyoung CHOI

IPC: H01L27/088 ,  H01L23/522 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/66 ,  H01L21/28 ,  H01L21/78 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L23/5226 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/66439 ,  H01L21/28123 ,  H01L21/7806 ,  H01L21/823475 ,  H01L21/823481

Abstract: An integrated circuit device includes a channel area extending in a first horizontal direction, a gate cut structure having a tapered shape in which a horizontal width thereof decreases while extending from a lower side to an upper side in a vertical direction, and a pair of gate electrodes respectively having ends facing each other with the gate cut structure therebetween. The pair of gate electrodes may extend in a second horizontal direction intersecting with the first horizontal direction.

公开(公告)号：US20230178606A1

公开(公告)日：2023-06-08

申请号：US18096663

申请日：2023-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojin JEONG ,  Sunwook KIM ,  Junbeom PARK ,  Seungmin SONG

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L27/0886 ,  H01L29/1608 ,  H01L29/7854

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

公开(公告)号：US20220165887A1

公开(公告)日：2022-05-26

申请号：US17370464

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin SONG ,  Taeyong KWON ,  Jaehyeoung MA ,  Namhyun LEE

IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

公开(公告)号：US20220157811A1

公开(公告)日：2022-05-19

申请号：US17380232

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggun YOU ,  Sung Gi HUR ,  Sungil PARK ,  Wooseok PARK ,  Seungmin SONG

IPC: H01L27/088 ,  H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device including a substrate that includes first and second regions; a first active pattern on the first region, the first active pattern including first source/drain patterns and a first channel pattern between the first source/drain patterns; a second active pattern on the second region, the second active pattern including second source/drain patterns and a second channel pattern between the second source/drain patterns; and a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern, wherein a length of the first channel pattern is greater than a length of the second channel pattern, each of the first channel pattern and the second channel pattern includes a plurality of semiconductor patterns stacked on the substrate, and at least two semiconductor patterns of the first channel pattern are bent away from or toward a bottom surface of the substrate.

公开(公告)号：US20210305371A1

公开(公告)日：2021-09-30

申请号：US17345241

申请日：2021-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojin JEONG ,  Sunwook KIM ,  Junbeom PARK ,  Seungmin SONG

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/16 ,  H01L29/78

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

公开(公告)号：US20240413252A1

公开(公告)日：2024-12-12

申请号：US18812404

申请日：2024-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin SONG ,  Taeyong KWON ,  Jaehyeoung MA ,  Namhyun LEE

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

公开(公告)号：US20220123014A1

公开(公告)日：2022-04-21

申请号：US17338823

申请日：2021-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin KIM ,  Seungmin SONG ,  Dongseog EUN ,  Seokhwa JUNG

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

Abstract: A semiconductor chip includes a substrate, a source structure disposed on the substrate, and a support pattern disposed on the source structure. Each of the source structure and the support pattern includes polysilicon. The semiconductor chip further includes an electrode structure disposed on the support pattern, and a plurality of vertical structures extending vertically through the electrode structure. The electrode structure includes a lower electrode structure disposed on the support pattern and including a plurality of lower gate electrodes and a plurality of first insulating films, a second insulating film disposed on the lower electrode structure, and an upper electrode structure disposed on the second insulating film and including a plurality of upper gate electrodes and a plurality of third insulating films. The vertical structures contact the source structure above the source structure.

公开(公告)号：US20210135001A1

公开(公告)日：2021-05-06

申请号：US17140786

申请日：2021-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggil YANG ,  Seungmin SONG ,  Geumjong BAE ,  Dong II BAE

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes a channel pattern including a first semiconductor pattern and a second semiconductor pattern, which are sequentially stacked on a substrate, and a gate electrode that extends in a first direction and crosses the channel pattern. The gate electrode includes a first portion interposed between the substrate and the first semiconductor pattern and a second portion interposed between the first and second semiconductor patterns. A maximum width in a second direction of the first portion is greater than a maximum width in the second direction of the second portion, and a maximum length in the second direction of the second semiconductor pattern is less than a maximum length in the second direction of the first semiconductor pattern.

公开(公告)号：US20200303538A1

公开(公告)日：2020-09-24

申请号：US16894270

申请日：2020-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggil YANG ,  Seungmin SONG ,  Geumjong BAE ,  Dong Il BAE

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes a channel pattern including a first semiconductor pattern and a second semiconductor pattern, which are sequentially stacked on a substrate, and a gate electrode that extends in a first direction and crosses the channel pattern. The gate electrode includes a first portion interposed between the substrate and the first semiconductor pattern and a second portion interposed between the first and second semiconductor patterns. A maximum width in a second direction of the first portion is greater than a maximum width in the second direction of the second portion, and a maximum length in the second direction of the second semiconductor pattern is less than a maximum length in the second direction of the first semiconductor pattern.