公开(公告)号：US11735498B2

公开(公告)日：2023-08-22

申请号：US17213767

申请日：2021-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwuk Park ,  Youngmin Lee ,  Sungdong Cho ,  Eunji Kim ,  Hyoungyol Mun ,  Seokhwan Jeong

IPC: H01L23/48 ,  H01L21/762 ,  H01L25/065 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76232

Abstract: A semiconductor includes a substrate having a first surface and a second surface opposite to each other, the substrate having a via hole extending in a thickness direction from the first surface, a circuit pattern in the first surface of the substrate, a through electrode structure in the via hole, a device isolation structure in a first trench extending in one direction in the first surface of the substrate, the device isolation structure between the via hole and the circuit pattern, the device isolation structure including a first oxide layer pattern and a first nitride layer pattern sequentially stacked on an inner surface of the first trench, the first nitride layer pattern filling the first trench, and an insulation interlayer on the first surface of the substrate and covering the circuit pattern.

公开(公告)号：US11705379B2

公开(公告)日：2023-07-18

申请号：US17087879

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho Lee ,  Won Kim ,  Haeseok Park ,  Ilgeun Jung ,  Jinkuk Bae ,  Inyoung Lee ,  Sungdong Cho

IPC: H01L23/31 ,  H01L25/065 ,  H01L25/18 ,  H01L21/66 ,  H01L23/00

CPC classification number: H01L23/3171 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/18 ,  H01L22/12 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/10125 ,  H01L2224/13016 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/14515 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/1436

Abstract: A semiconductor package may include a base, a first chip on the base, and first connection patterns that connect and couple the base and the first chip. The first chip may include a substrate, pad patterns on the substrate, a passivation layer on the substrate and having openings, and pillars on the substrate, the pad patterns include a first signal pad and a second signal pad, the first connection patterns are in contact with the pillars, the pillars include a first signal pillar in contact with the first signal pad and a second signal pillar in contact with the second signal pad, the openings in the passivation layer include a first opening having a sidewall facing a side surface of the first signal pillar and surrounding the side surface of the first signal pillar, and a second opening having a sidewall facing a side surface of the second signal pillar and surrounding the side surface of the second signal pillar, and a maximum width of the second opening is greater than a maximum width of the first opening.

公开(公告)号：US11380606B2

公开(公告)日：2022-07-05

申请号：US16932726

申请日：2020-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Kim ,  Sungdong Cho ,  Kwangwuk Park ,  Sangjun Park ,  Daesuk Lee ,  Hakseung Lee

IPC: H01L23/48 ,  H01L21/768 ,  H01L25/18 ,  H01L23/528 ,  H01L23/498 ,  H01L23/522 ,  H01L21/3065

Abstract: A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.