公开(公告)号：US20240162163A1

公开(公告)日：2024-05-16

申请号：US18461478

申请日：2023-09-05

申请人： Texas Instruments Incorporated

发明人： Sreenivasan K Koduri

IPC分类号： H01L23/552 ,  H01L23/00 ,  H01L23/488

CPC分类号： H01L23/552 ,  H01L23/488 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/95 ,  H01L2224/03318 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05007 ,  H01L2224/05025 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/11312 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/1191 ,  H01L2224/13012 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13618 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/17107 ,  H01L2224/32227 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83193

摘要： A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

公开(公告)号：US09978710B2

公开(公告)日：2018-05-22

申请号：US15385653

申请日：2016-12-20

申请人： IMEC VZW ,  Katholieke Universiteit Leuven

发明人： Vikas Dubey ,  Eric Beyne ,  Jaber Derakhshandeh

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/81 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/0601 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13009 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/13541 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/8114 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92225 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2924/01049 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2924/01005 ,  H01L2924/206 ,  H01L2924/20106 ,  H01L2924/207

摘要： A method for producing a stack of semiconductor devices and the stacked device obtained thereof are disclosed. In one aspect, the method includes providing a first semiconductor device comprising a dielectric layer with a hole, the hole lined with a metal layer and partially filled with solder material. The method also includes providing a second semiconductor device with a compliant layer having a metal protrusion through the compliant layer, the protrusion capped with a capping layer. The method further includes mounting the devices by landing the metal protrusion in the hole, where the compliant layer is spaced from the dielectric layer. The method includes thereafter reflowing the solder material, thereby bonding the devices such that the compliant layer is contacting the dielectric layer.

公开(公告)号：US20170345739A1

公开(公告)日：2017-11-30

申请号：US15289187

申请日：2016-10-09

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L23/48 ,  H01L21/822 ,  H01L21/768 ,  H01L27/06 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L25/065 ,  H01L27/0688 ,  H01L2224/04 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/06102 ,  H01L2224/08146 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/13583 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/13687 ,  H01L2224/29006 ,  H01L2224/29187 ,  H01L2224/32146 ,  H01L2224/73204 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2224/83 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/0499 ,  H01L2924/01027 ,  H01L2924/0498 ,  H01L2924/01044 ,  H01L2224/08 ,  H01L2224/80 ,  H01L2224/81

摘要： An advanced through silicon via structure for is described. The device includes a substrate including integrated circuit devices. A high aspect ratio through substrate via is disposed in the substrate. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A metallic barrier layer is disposed on the sidewalls of the through substrate via. A surface portion of the metallic barrier layer has been converted to a nitride surface layer by a nitridation process. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer fills the through substrate via and has a recess in an upper portion. A second barrier layer is disposed over the recess. A second metal layer is disposed over the second barrier layer and creates a contact.

公开(公告)号：US20170233884A1

公开(公告)日：2017-08-17

申请号：US15461866

申请日：2017-03-17

申请人： Senju Metal Industry Co., Ltd.

发明人： Hiroyoshi KAWASAKI ,  Takahiro ROPPONGI ,  Daisuke SOMA ,  Isamu SATO

IPC分类号： C25D3/60 ,  C25D5/20 ,  B23K35/02 ,  H01L23/00 ,  B23K35/26 ,  B22F1/02 ,  C22C13/00 ,  F16B5/08 ,  B23K35/30

CPC分类号： C25D3/60 ,  B22F1/025 ,  B22F9/08 ,  B22F2301/10 ,  B22F2301/30 ,  B23K35/0222 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/302 ,  B23K2101/40 ,  C22C9/00 ,  C22C13/00 ,  C25D3/30 ,  C25D5/12 ,  C25D5/20 ,  F16B5/08 ,  H01B1/02 ,  H01L24/13 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0109 ,  H01L2924/01092 ,  H01L2924/12042 ,  H01L2924/15321 ,  H05K3/3436 ,  H05K2201/0218 ,  H05K2201/10734 ,  H01L2924/00

摘要： A Cu core ball and a method of manufacturing such a Cu core ball. Purity of the Cu internal ball is at least 99.9% and not greater than 99.995%. A total contained amount of Pb and/or Bi in impurity contained in the Cu ball is equal to or larger than 1 ppm. Its sphericity is at least 0.95. A solder plating film coated on the Cu ball is of Sn solder or a lead free solder alloy whose primary component is Sn. In the solder plating film, a contained amount of U is not more than 5 ppb and that of Th is not more than 5 ppb. A total alpha dose of the Cu ball and the solder plating film is not more than 0./0200 cph/cm2. An arithmetic average roughness of the Cu core ball is equal to or less than 0.3 μm.

公开(公告)号：US20170033075A1

公开(公告)日：2017-02-02

申请号：US15294508

申请日：2016-10-14

申请人： Advanced Semiconductor, Inc.

发明人： Min-Fong SHU ,  Yi-Hsiu TSENG ,  Kuan-Neng CHEN ,  Shu-Chiao KUO

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/81 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3142 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05618 ,  H01L2224/05623 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/1182 ,  H01L2224/13026 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13618 ,  H01L2224/13623 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13663 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13678 ,  H01L2224/13687 ,  H01L2224/1607 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81096 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81418 ,  H01L2224/81423 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/81487 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81898 ,  H01L2224/83104 ,  H01L2224/83193 ,  H01L2224/92125 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/3511 ,  H01L2924/381 ,  H01L2224/8109 ,  H01L2924/00014 ,  H01L2924/01076 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/053

摘要： A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

摘要翻译： 一种接合结构的制造方法包括：（a）提供基板，其中所述基板包括顶表面和邻近所述基板顶表面设置的至少一个接合焊盘，至少一个接合焊盘，其具有倾斜表面，其具有第一 坡; （b）提供半导体元件，其中所述半导体元件包括至少一个支柱，并且至少一个支柱具有具有第二斜率的侧壁，其中所述第一斜率的绝对值小于所述第二斜率的绝对值; 和（c）将至少一个柱结合到所述至少一个接合焊盘中相应的一个焊盘的倾斜表面的一部分上。

公开(公告)号：US20160148885A1

公开(公告)日：2016-05-26

申请号：US14899378

申请日：2013-06-19

申请人： SENJU METAL INDUSTRY CO., LTD.

发明人： Hiroyoshi Kawasaki ,  Tomohiko Hashimoto ,  Atsushi Ikeda ,  Takahiro Roppongi ,  Daisuke Soma ,  Isamu Sato ,  Yuji Kawamata

IPC分类号： H01L23/00 ,  C22C13/00 ,  C22C9/00 ,  H05K3/34 ,  B23K35/02 ,  B23K35/30 ,  B23K35/26 ,  H01L23/498 ,  C22C43/00

CPC分类号： H01L24/13 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/302 ,  C22C9/00 ,  C22C13/00 ,  C22C43/00 ,  C23C28/021 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2924/1434 ,  H01L2924/3841 ,  H05K3/3457 ,  H05K2203/041 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0103

摘要： A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an α dose of 0.0200 cph/cm2 or less.

摘要翻译： 提供铜芯球，防止任何软错误并减少任何连接故障。 铜芯球包括在作为Sn焊料镀覆膜的Cu球的表面上形成的焊锡镀膜，或者由主要成分为Sn的无铅焊料合金制成。 焊锡镀膜含有5ppb以下的U，5ppb以下的U。 Cu球的纯度为99.9％以上，Cu不大于99.995％。 其中Pb和/或Bi含量总共为1ppm以上。 其球形度为0.95以上。 得到的Cu芯球的α剂量为0.0200cph / cm 2以下。

公开(公告)号：US09278409B2

公开(公告)日：2016-03-08

申请号：US14613175

申请日：2015-02-03

申请人： Senju Metal Industry Co., Ltd.

发明人： Hiroyoshi Kawasaki ,  Shigeki Kondo ,  Atsushi Ikeda ,  Takahiro Roppongi ,  Daisuke Soma ,  Isamu Sato

IPC分类号： H01B5/00 ,  B32B15/04 ,  B23K35/02 ,  B23K35/26 ,  B23K35/30 ,  C22C9/00 ,  C22C13/00 ,  C22C13/02 ,  H01B1/02 ,  H01L23/00

CPC分类号： B23K35/025 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/302 ,  C22C9/00 ,  C22C12/00 ,  C22C13/00 ,  C22C13/02 ,  C22F1/08 ,  H01B1/02 ,  H01L24/13 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0109 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/01028 ,  H01L2924/00011

摘要： A core ball wherein a junction melting temperature and a low alpha dose are set for suppressing a soft error generation and solving a mounting problem. A metallic powder as a core is a sphere. A pure degree of a Cu ball of the metallic powder is equal to or higher than 99.9% but equal to or less than 99.995%. A contained amount of one of Pb and Bi or a total contained amount of Pb and Bi is equal to or higher than 1 ppm. A sphericity of the Cu ball is at least 0.95. A solder plating film for coating the Cu ball comprises Sn—Bi based alloy. U contained in the solder plating film is equal to or less than 5 ppb and Th is equal to or less than 5 ppb. An alpha dose of the core ball is equal to or less than 0.0200 cph/cm2.

摘要翻译： 设置结熔融温度和低α剂量的芯球，以抑制软错误产生并解决安装问题。 作为核心的金属粉末是球体。 金属粉末的Cu球的纯度等于或高于99.9％但等于或小于99.995％。 Pb和Bi中的一种或Pb和Bi的总含量的含量等于或高于1ppm。 Cu球的球形度至少为0.95。 用于涂覆Cu球的焊料镀覆膜包括Sn-Bi基合金。 包含在焊料镀膜中的U等于或小于5ppb，Th等于或小于5ppb。 芯球的α剂量等于或小于0.0200cph / cm 2。

公开(公告)号：US20150364449A1

公开(公告)日：2015-12-17

申请号：US14833840

申请日：2015-08-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Tzong-Hann Yang ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/32135 ,  H01L2224/32141 ,  H01L2224/32145 ,  H01L2224/81085 ,  H01L2224/811 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81232 ,  H01L2224/81355 ,  H01L2224/81359 ,  H01L2224/81801 ,  H01L2224/8192 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/1533 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2924/01015 ,  H01L2924/06 ,  H01L2924/00

摘要： A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

摘要翻译： 一种方法包括将第一包装部件的第一电连接器与第二包装部件的第二电连接器对准。 利用第一电​​连接器与第二电连接器对准，金属层被电镀在第一和第二电连接器上。 金属层将第一电连接器连接到第二电连接器。

公开(公告)号：US08623763B2

公开(公告)日：2014-01-07

申请号：US13150899

申请日：2011-06-01

申请人： Jeffrey Alan West

发明人： Jeffrey Alan West

IPC分类号： H01L21/44

CPC分类号： H01L23/538 ,  H01L21/563 ,  H01L23/481 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13671 ,  H01L2224/13673 ,  H01L2224/13681 ,  H01L2224/14181 ,  H01L2224/1613 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81005 ,  H01L2224/81007 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01074

摘要： A method of protecting through substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside. A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips. The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head. The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.

公开(公告)号：US20120299197A1

公开(公告)日：2012-11-29

申请号：US13478613

申请日：2012-05-23

申请人： Heungkyu KWON ,  Kang Joon Lee ,  Jae Wook Yoo ,  Su-Chang Lee

发明人： Heungkyu KWON ,  Kang Joon Lee ,  Jae Wook Yoo ,  Su-Chang Lee

IPC分类号： H01L23/48

CPC分类号： H01L23/49811 ,  H01L23/13 ,  H01L23/16 ,  H01L23/18 ,  H01L23/3157 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13541 ,  H01L2224/13561 ,  H01L2224/13583 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13616 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1366 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/1367 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/13679 ,  H01L2224/1368 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/1401 ,  H01L2224/1403 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14181 ,  H01L2224/14505 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/1712 ,  H01L2224/17181 ,  H01L2224/175 ,  H01L2224/1751 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15787 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2224/05552

摘要： Semiconductor packages include a first substrate including a central portion and a peripheral portion, at least one first central connection member attached to the central portion of the first substrate, and at least one first peripheral connection member attached to the peripheral portion of the first substrate. The first central connection member includes a first supporter and a first fusion conductive layer surrounding the first supporter.

摘要翻译： 半导体封装包括包括中心部分和周边部分的第一基板，附接到第一基板的中心部分的至少一个第一中心连接部件和附接到第一基板的周边部分的至少一个第一周边连接部件。 第一中心连接构件包括第一支撑件和围绕第一支撑件的第一融合导电层。