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公开(公告)号:US11981848B2
公开(公告)日:2024-05-14
申请号:US17238538
申请日:2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Jun Park , Junghwa Kim , Tae Gon Kim , Taekhoon Kim , Young Mo Sung , Nayoun Won , Dongjin Yun , Mi Hye Lim , Shin Ae Jun , Hyeonsu Heo
IPC: C09K11/56 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115
CPC classification number: C09K11/565 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115
Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.
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12.
公开(公告)号:US11352558B2
公开(公告)日:2022-06-07
申请号:US16904664
申请日:2020-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Shin Ae Jun , Taek hoon Kim , Hyeyeon Yang , Nayoun Won , Jongmin Lee , Mi Hye Lim
Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.
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公开(公告)号:US11282987B2
公开(公告)日:2022-03-22
申请号:US16777223
申请日:2020-01-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Deukseok Chung , Tae Gon Kim
IPC: H01L33/50 , H01L25/075 , H01L33/38 , H01L27/15 , H01L33/00
Abstract: A method of manufacturing a display device includes preparing a plurality of light-emitting element packages on a substrate, preparing a first solution including first semiconductor nanocrystals, applying a voltage to a part of the plurality of light-emitting element packages to transport the first semiconductor nanocrystals to a region overlapped with the part of the plurality of light-emitting element packages, and forming a first color conversion layer with the first semiconductor nanocrystals.
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公开(公告)号:US11193062B2
公开(公告)日:2021-12-07
申请号:US16825293
申请日:2020-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam Park , Tae Gon Kim , Nayoun Won , Shin Ae Jun , Soo Kyung Kwon , Seon-Yeong Kim , Shang Hyeun Park , Jooyeon Ahn , Yuho Won , Eun Joo Jang , Hyo Sook Jang
IPC: C09K11/88 , C09K11/62 , C09K11/70 , C09K11/56 , C09K11/02 , H01L27/32 , F21V8/00 , G02F1/1335 , G02F1/13357 , H05B33/14 , A61B6/06 , A61B6/00 , G01T7/00 , G21K1/02 , B82Y20/00 , B82Y40/00 , A61B6/02
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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公开(公告)号:US11075254B2
公开(公告)日:2021-07-27
申请号:US16750106
申请日:2020-01-23
Inventor: Deukseok Chung , Sung Hun Lee , Tae Gon Kim , Shin Ae Jun
Abstract: A display device includes a first electrode, a pixel define layer disposed on the first electrode, the pixel define layer including an opening, an organic emission layer disposed on the pixel define layer, the organic emission layer in electrical communication with the first electrode through the opening, a second electrode disposed on the organic emission layer, a light recycle layer disposed on the second electrode, and a color filter layer disposed on the light recycle layer, the color filter layer including a quantum dot, wherein a width of the organic emission layer is longer than a width of the color filter layer.
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公开(公告)号:US12232347B2
公开(公告)日:2025-02-18
申请号:US18404975
申请日:2024-01-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Nayoun Won , Mi Hye Lim , Tae Gon Kim , Taekhoon Kim , Shang Hyeun Park , Shin Ae Jun
IPC: H10K50/115 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88
Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.
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公开(公告)号:US12225800B2
公开(公告)日:2025-02-11
申请号:US17686934
申请日:2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Shin Ae Jun , Deukseok Chung , Garam Park , Sung Hun Lee , Byoung Ki Choi
IPC: H10K59/38 , B82Y20/00 , B82Y40/00 , C09K11/02 , C09K11/08 , C09K11/88 , H10K50/13 , H10K59/124 , H10K102/00
Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.04:1.
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18.
公开(公告)号:US12195656B2
公开(公告)日:2025-01-14
申请号:US17687453
申请日:2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Hyeyeon Yang , A Ra Jo , Sue In Chae , Sung Jun Park , Hyokeun Park , Shin Ae Jun
IPC: C09K11/88 , C09D11/037 , C09D11/50 , C09K11/08 , G02F1/1335 , B82Y20/00 , B82Y40/00
Abstract: A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.15:1, a mole ratio of chlorine to sulfur (Cl:S) is less than about 0.1:1, and a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1. The luminescent nanostructures don not include cadmium.
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19.
公开(公告)号:US11958998B2
公开(公告)日:2024-04-16
申请号:US17308333
申请日:2021-05-05
Inventor: Ha Il Kwon , Tae Gon Kim , Shang Hyeun Park , Eun Joo Jang , Shin Ae Jun , Garam Park
IPC: C09K11/02 , C08K3/16 , C08K3/30 , C08K5/09 , C08K5/37 , C08K9/04 , C09K11/08 , C09K11/56 , C09K11/62 , C09K11/88 , G02F1/13357 , H01L33/50 , G02F1/1335
CPC classification number: C09K11/02 , C08K3/16 , C08K3/30 , C08K9/04 , C09K11/562 , G02F1/1336 , C08K2003/168 , C08K2003/3036 , G02F1/133614
Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
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公开(公告)号:US11901178B2
公开(公告)日:2024-02-13
申请号:US17187930
申请日:2021-03-01
Inventor: Tae Gon Kim , Nuri Oh , Tianshuo Zhao , Cherie Kagan , Eun Joo Jang , Christopher Murray
IPC: H01L21/02 , H01L29/12 , H01L29/66 , H01L29/775
CPC classification number: H01L21/02205 , H01L29/127 , H01L29/66439 , H01L29/66977 , H01L29/775
Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes:
supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and
performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
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