公开(公告)号：US20220320278A1

公开(公告)日：2022-10-06

申请号：US17843105

申请日：2022-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungin CHOI ,  Hyunchul SONG ,  Sunjung KIM ,  Taegon KIM ,  Seong Hoon JEONG

IPC: H01L29/06 ,  H01L29/08 ,  H01L27/092 ,  H01L21/762 ,  H01L21/3115 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/11

Abstract: A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

公开(公告)号：US20150115368A1

公开(公告)日：2015-04-30

申请号：US14330777

申请日：2014-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Chul KIM ,  Joonghan SHIN ,  Bongjin KUH ,  Taegon KIM ,  Hanmei CHOI

IPC: H01L29/06 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/0696 ,  H01L21/823807 ,  H01L21/845 ,  H01L27/092 ,  H01L27/1211

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括设置在半导体衬底上的多个单元电池。 每个单电池可以包括埋在半导体衬底中的掩埋绝缘图案，设置在掩埋绝缘图案上的第一有源图案和设置在掩埋绝缘图案上并与第一有源图案间隔开的第二有源图案。 埋置的绝缘图案可以限定单位单元区域，其中可以布置每个单位单元。