公开(公告)号：US20190276738A1

公开(公告)日：2019-09-12

申请号：US16298276

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Jeong Hee LEE ,  Sung Woo KIM ,  Jin A KIM ,  Yuho WON ,  Eun Joo JANG

IPC: C09K11/88 ,  H01L51/50

Abstract: A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.

公开(公告)号：US20180179441A1

公开(公告)日：2018-06-28

申请号：US15855436

申请日：2017-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Young Seok PARK ,  Shang Hyeun PARK ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Dae Young CHUNG ,  Taekhoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/00

CPC classification number: C09K11/883 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  G02B5/22 ,  G02B5/223 ,  H01L27/322 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/502 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.

公开(公告)号：US20240244862A1

公开(公告)日：2024-07-18

申请号：US18405428

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Ju Hyun KIM ,  Yuho WON ,  Won Sik YOON ,  Taehyung KIM ,  Hyunju KIM

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/06 ,  H10K85/30

CPC classification number: H10K50/115 ,  C09K11/02 ,  C09K11/06 ,  H10K85/381 ,  H10K2101/40

Abstract: A light emitting device includes a first electrode and a second electrode facing each other, a light emitting layer disposed between the first electrode and the second electrode, and the light emitting layer including quantum dots, wherein the light emitting layer includes a first light emitting layer proximate to the first electrode and a second light emitting layer proximate to the second electrode, the quantum dots of the first light emitting layer include a first ligand on a surface, and the quantum dots of the second light emitting layer include a second ligand on a surface, the first ligand different from the second ligand, a HOMO energy level of the first light emitting layer is lower (shallower) than a HOMO energy level of the second light emitting layer.

公开(公告)号：US20240174921A1

公开(公告)日：2024-05-30

申请号：US18517453

申请日：2023-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE GRENOBLE ALPES

Inventor： Yuho WON ,  Yongwook KIM ,  Peter Reiss ,  Avijit Saha ,  Ranjana Yadav

IPC: C09K11/64 ,  C09K11/62 ,  G02F1/1335 ,  H10K50/115 ,  H10K59/38

CPC classification number: C09K11/642 ,  C09K11/621 ,  C09K11/623 ,  G02F1/133614 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00

Abstract: A nanocrystal particle includes a Group III-VI compound including gallium and sulfur, wherein the nanocrystal particle is configured to emit a first light, a maximum emission peak of the first light is in a wavelength range of greater than or equal to about 300 nanometers and less than or equal to about 485 nanometers, an absolute quantum efficiency of the nanocrystal particle is greater than or equal to about 26%, and a full width at half maximum of the maximum emission peak of the first light is greater than or equal to about 10 nanometers and less than or equal to about 70 nanometers, when analyzed by photoluminescence spectroscopy.

公开(公告)号：US20240097068A1

公开(公告)日：2024-03-21

申请号：US18244661

申请日：2023-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daehee LEE ,  Yuho WON ,  Wonsik YOON ,  Taehyung KIM

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/30

CPC classification number: H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  B82Y20/00

Abstract: A quantum dot of a light emitting device, includes: a core; and a shell around the core and including halogen elements of at least one type, wherein a first number per unit volume of halogen elements in a first area of the shell, that includes an outer surface of the shell, is larger than a second number per unit volume of halogen elements in a second area of the shell other than the outer surface of the shell.

公开(公告)号：US20230250337A1

公开(公告)日：2023-08-10

申请号：US18297755

申请日：2023-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Hwea Yoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  C09K11/62

CPC classification number: C09K11/883 ,  C01B19/007 ,  C01G9/08 ,  C09K11/56 ,  C09K11/62 ,  H10K50/115

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US20230093467A1

公开(公告)日：2023-03-23

申请号：US18052597

申请日：2022-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C30B29/48 ,  C01G9/08 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  H01L51/50 ,  H01L33/28

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US20220348824A1

公开(公告)日：2022-11-03

申请号：US17866983

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Yong Wook KIM ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: C09K11/88 ,  C09K11/54 ,  H01L33/28 ,  H01L33/06 ,  C09K11/56

Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

公开(公告)号：US20220325179A1

公开(公告)日：2022-10-13

申请号：US17708245

申请日：2022-03-30

Applicant: Samsung Electronics Co., Ltd. ,  The Governing Council of the University of Toronto

Inventor： Eun Joo JANG ,  Seungjin Lee ,  Ted Sargent ,  Kwanghee KIM ,  Yuho WON

IPC: C09K11/88 ,  C01G9/00 ,  C09K11/55 ,  C09K11/70 ,  C01G9/08 ,  C01G15/00

Abstract: A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.

公开(公告)号：US20210226145A1

公开(公告)日：2021-07-22

申请号：US17205015

申请日：2021-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Kwanghee KIM ,  Hongkyu SEO ,  Eun Joo JANG ,  Oul CHO ,  Tae Hyung KIM ,  Yuho WON ,  Hee Jae LEE

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.