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公开(公告)号：US20210376099A1
公开(公告)日：2021-12-02
申请号：US17400901
申请日：2021-08-12
发明人： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC分类号： H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US20190312119A1
公开(公告)日：2019-10-10
申请号：US16432298
申请日：2019-06-05
发明人： Eunae CHO , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC分类号： H01L29/423 , H01L29/51 , H01L29/49 , H01L21/28
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US10325992B2
公开(公告)日：2019-06-18
申请号：US14854272
申请日：2015-09-15
发明人： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC分类号： H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US20170207275A1
公开(公告)日：2017-07-20
申请号：US15409656
申请日：2017-01-19
发明人： Sung Heo , Kyu Sik Kim , Nam Jeong Kim , Seong Heon KIM , Yongsung Kim , Eunae Cho , Takkyun Ro , Dongjin Yun , Yongsu Kim , Wenxu Xianyu , Yong-Young Park , Kyung Bae Park
CPC分类号： H01L27/307 , H01L27/14621 , H01L27/14643 , H01L27/14665 , H01L27/301 , H01L51/42 , H01L51/441 , H01L51/448 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L51/5203 , H01L51/56 , H01L2251/301 , H01L2251/552 , Y02E10/549
摘要： An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0
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