公开(公告)号：US20240329536A1

公开(公告)日：2024-10-03

申请号：US18580110

申请日：2022-07-04

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Hyungrang MOON ,  Minyoung LEE ,  Ryunmin HEO ,  Jamin KU ,  Donghyung LEE ,  Dasom HAN ,  Minsoo KIM ,  Jaehyun KIM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/16

CPC classification number: G03F7/11 ,  G03F7/0042 ,  G03F7/161 ,  G03F7/168

Abstract: Provided are composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the same and the composition includes an organic solvent and a compound having an A log P3 of greater than or equal to 30 Å2.

公开(公告)号：US20230038110A1

公开(公告)日：2023-02-09

申请号：US17858921

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/16 ,  G03F7/11

Abstract: A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20210356861A1

公开(公告)日：2021-11-18

申请号：US17306820

申请日：2021-05-03

Applicant: Samsung SDI Co., Ltd.

Inventor： Seung HAN ,  Jaehyun KIM ,  Kyungsoo MOON ,  Changsoo WOO ,  Seungyong CHAE ,  Ran NAMGUNG ,  Hwansung CHEON

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5, and a solvent. A method of forming photoresist patterns utilizes the composition.

公开(公告)号：US20210109442A1

公开(公告)日：2021-04-15

申请号：US17036693

申请日：2020-09-29

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyungsoo MOON ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Ran NAMGUNG ,  Changsoo WOO ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/027

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.

公开(公告)号：US20200041897A1

公开(公告)日：2020-02-06

申请号：US16211145

申请日：2018-12-05

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/20

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(═O)Rb.

公开(公告)号：US20210311387A1

公开(公告)日：2021-10-07

申请号：US17217941

申请日：2021-03-30

Applicant: Samsung SDI Co., Ltd.

Inventor： Changsoo WOO ,  Eunmi KANG ,  Jaehyun KIM ,  Jimin KIM ,  Taeho KIM ,  Ran NAMGUNG ,  Kyungsoo MOON ,  Hwansung CHEON ,  Seungyong CHAE ,  Seung HAN

IPC: G03F7/004 ,  C07F7/22 ,  H01L21/027

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, a photoacid generator (PAG), and a solvent: In Chemical Formula 1, R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof; and X, Y, and Z are each independently —OR1 or —OC(═O)R2.

公开(公告)号：US20200041896A1

公开(公告)日：2020-02-06

申请号：US16211114

申请日：2018-12-05

Applicant: Samsung SDI Co., Ltd.

Inventor： Kyung Soo MOON ,  Jaehyun KIM ,  Yoong Hee NA ,  Ran NAMGUNG ,  Hwansung CHEON ,  Seungyong CHAE

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/20

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.