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    Semiconductor pressure sensor and pressure sensing device
    11.
    发明授权
    Semiconductor pressure sensor and pressure sensing device 失效
    半导体压力传感器和压力传感装置

    公开(公告)号：US06892582B1

    公开(公告)日：2005-05-17

    申请号：US09936480

    申请日：1999-08-20

    Applicant: Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

    Inventor： Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

    IPC: B81B3/00 ,  B81B7/00 ,  G01L7/08 ,  G01L9/00 ,  H01L21/00

    CPC classification number: B81C1/00333 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

    Abstract: The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film.This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

    Abstract translation: 本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供一种特征在于优异的压力传感器 生产力和耐久性。 在通过牺牲层蚀刻技术形成非常小的间隙之后，通过CVD技术等沉积氧化硅膜，从而密封蚀刻通道。 此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。 这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。 此外，具有小膜应力的密封材料减小了隔膜的时间变形。

    In-cylinder pressure sensing apparatus for multi-cylinder engine
    12.
    发明授权
    In-cylinder pressure sensing apparatus for multi-cylinder engine 失效
    用于多缸发动机的缸内压力感测装置

    公开(公告)号：US5831263A

    公开(公告)日：1998-11-03

    申请号：US548755

    申请日：1995-10-26

    Applicant: Masahiro Komachiya ,  Shigeru Oho ,  Satoshi Shimada ,  Seiko Suzuki ,  Masahiro Kurita ,  Terumi Nakazawa ,  Takao Sasayama

    Inventor： Masahiro Komachiya ,  Shigeru Oho ,  Satoshi Shimada ,  Seiko Suzuki ,  Masahiro Kurita ,  Terumi Nakazawa ,  Takao Sasayama

    IPC: F02D35/02 ,  F02D41/14 ,  F02D41/22 ,  H01T5/16

    CPC classification number: F02D35/023 ,  F02D41/1498 ,  F02D41/22 ,  F02D2041/285 ,  F02D2200/1015 ,  Y02T10/40

    Abstract: An in-cylinder pressure sensing apparatus for a multi-cylinder engine has a plurality of sensing parts packaged between a cylinder head and a cylinder block of an engine having a plurality of cylinders and being operative to detect a signal indicative of an internal pressure of each of the plurality of cylinders. A detection circuit is provided for connecting the sensing parts in series and for overlapping detection signals obtained from the individual sensing parts to take out a resulting overlapped signal. A reference signal generator operates to supply a reference signal for separating detection signals corresponding to the individual cylinders from the overlapped signal. A unit is also provided for separating the detection signals, detected in accordance with pressures of the individual cylinders, from the overlapped signal on the basis of the reference signal.

    Abstract translation: 用于多气缸发动机的缸内压力感测装置具有多个感测部件，其被封装在具有多个气缸的发动机的气缸盖和气缸体之间，并且可操作以检测指示每个气缸内部压力的信号 的多个气缸。 提供检测电路，用于串联连接感测部分，并且用于重叠从各个感测部分获得的检测信号，以取出所产生的重叠信号。 参考信号发生器操作以提供参考信号，用于将与各个气缸相对应的检测信号与重叠信号分离。 还提供了一个单元，用于根据参考信号将重叠的信号根据各个气缸的压力检测出的检测信号分离。

    Integrated multisensor and static and differential pressure transmitter and plant system using the integrated multisensor
    14.
    发明授权
    Integrated multisensor and static and differential pressure transmitter and plant system using the integrated multisensor 失效
    集成多传感器和静压差压变送器和工厂系统采用集成式多传感器

    公开(公告)号：US5259248A

    公开(公告)日：1993-11-09

    申请号：US672113

    申请日：1991-03-19

    Applicant: Seiichi Ugai ,  Satoshi Shimada ,  Tomoyuki Tobita ,  Akira Sase

    Inventor： Seiichi Ugai ,  Satoshi Shimada ,  Tomoyuki Tobita ,  Akira Sase

    IPC: G01L9/00 ,  G01L9/06 ,  G01L19/00 ,  G01L13/02

    CPC classification number: G01L19/0092 ,  G01L9/0054 ,  G01L9/065

    Abstract: In an integrated multisensor used in a differential and static pressure transmitter, a pair of static pressure gages are formed on a static pressure detecting diaphragm and another pair of static pressure gages are formed at positions on a fixed portion which are near to the center of a differential pressure detecting diaphragm. The second term generated by a differential pressure appearing in a static pressure sensor is a function of a distance. Therefore, equal influence is exerted on each static pressure gage. Accordingly, by constructing a static pressure sensor so as to form a bridge circuit, a static pressure value free of the influence of a differential pressure can be detected, thereby making it possible to determine an accurate differential and static pressure.

    Abstract translation: 在用于差压静态压力变送器的集成多传感器中，静压检测膜上形成一对静压计，另一对静压计则形成在靠近中心的固定部位 差压检测膜片。 通过出现在静压传感器中的差压产生的第二项是距离的函数。 因此，对每个静压力表施加相等的影响。 因此，通过构造静压传感器以形成桥接电路，可以检测到不受压差影响的静压值，从而可以确定精确的差动静压。

    Video display system
    16.
    发明授权
    Video display system 失效
    视频显示系统

    公开(公告)号：US5010411A

    公开(公告)日：1991-04-23

    申请号：US824236

    申请日：1986-01-30

    Applicant: Satoshi Shimada ,  Yuji Watanabe

    Inventor： Satoshi Shimada ,  Yuji Watanabe

    IPC: H04N5/66 ,  G09G3/22 ,  G09G3/32

    CPC classification number: G09G3/22

    Abstract: A video display device comprising a display panel which has a large number of luminescent display cells arranged in an X-Y matrix and with a common drive circuit for applying an input video signal which substantially reduces the number of drive circuits by at least a factor of two and wherein a switching circuit switches the input video signal from a first plurality of luminescent display cells to adjacent luminescent display cells at every field period of the input video signal so as to reduce at least by one half the number of drive units required in the display device.

    Abstract translation: 一种视频显示装置，包括具有布置在XY矩阵中的大量发光显示单元的显示面板和用于施加输入视频信号的公共驱动电路，所述输入视频信号基本上将驱动电路的数量减少至少2倍， 其中切换电路在输入视频信号的每个场周期将输入视频信号从第一多个发光显示单元切换到相邻的发光显示单元，以便至少减少显示设备中所需的驱动单元数量的至少一半 。

    Method of making silicon diaphragm pressure sensor
    17.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号：US4670969A

    公开(公告)日：1987-06-09

    申请号：US694990

    申请日：1985-01-25

    Applicant: Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    Inventor： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    IPC: H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

    CPC classification number: G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

    Abstract: A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    Abstract translation: 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

    Pressure sensor with improved semiconductor diaphragm
    19.
    发明授权
    Pressure sensor with improved semiconductor diaphragm 失效
    带有改进的半导体膜片的压力传感器

    公开(公告)号：US4511878A

    公开(公告)日：1985-04-16

    申请号：US534076

    申请日：1983-09-20

    Applicant: Satoshi Shimada ,  Ken Murayama ,  Shigeyuki Kobori ,  Kanji Kawakami

    Inventor： Satoshi Shimada ,  Ken Murayama ,  Shigeyuki Kobori ,  Kanji Kawakami

    IPC: G01L9/04 ,  G01L9/00 ,  G01L9/06

    CPC classification number: G01L9/0054 ,  G01L19/147 ,  Y10S73/04

    Abstract: Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.

    Abstract translation: 提供一种具有半导体膜片的半导体型压力传感器，其中隔膜包括薄壁部分和至少一个厚壁部分中的至少一个，并且在其中限定形成在薄壁​​下方的隔膜的下表面中的凹部 零件，压阻元件放置在薄壁部分附近的隔膜的上表面上，并且支撑构件与隔膜的下表面的厚壁部分密封地接合，使得凹部被密封和限制，以便 当薄壁部分破裂时，防止高压液体吹走。

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