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90 条记录 (耗时 0.033 秒)

    Telescope main body and telescope
    11.
    发明申请
    Telescope main body and telescope 审中-公开
    望远镜主体和望远镜

    公开(公告)号：US20050098706A1

    公开(公告)日：2005-05-12

    申请号：US10981780

    申请日：2004-11-05

    申请人： Makoto Mogamiya ,  Toshio Masuda

    发明人： Makoto Mogamiya ,  Toshio Masuda

    IPC分类号： G02B23/06 ,  G02B7/08 ,  G02B7/28 ,  G02B7/36 ,  G02B23/04 ,  H04N5/225 ,  H04N5/232 ,  H04N101/00 ,  G02B7/04

    CPC分类号： H04N5/23212 ,  G02B7/08 ,  G02B23/04

    摘要： A telescope main body, which includes an objective optical system, a focusing system, an imaging device which captures an object image, and a beam splitter. Further, the telescope main body includes a calibration system that performs a calibration operation for calibrating a position shift between an image forming position of the object image and a receiving surface of the imaging device caused by diopter variation of a user. The calibration system includes a focus driving system, a focus detecting system, and a controller. The calibration system performs the calibration operation based on a detection result by the focus detecting system in a situation where the user has achieved focusing of a visual image by manipulating a focus adjusting member.

    摘要翻译： 望远镜主体，其包括物镜光学系统，聚焦系统，拍摄物体图像的成像装置和分束器。 此外，望远镜主体包括校准系统，其执行校准操作，用于校准由用户的屈光度变化引起的对象图像的图像形成位置和成像装置的接收表面之间的位置偏移。 校准系统包括聚焦驱动系统，焦点检测系统和控制器。 在用户通过操纵焦点调节构件来实现视觉图像的聚焦的情况下，校准系统基于焦点检测系统的检测结果执行校准操作。

    Data processing apparatus for semiconductor processing apparatus
    13.
    发明授权
    Data processing apparatus for semiconductor processing apparatus 有权
    半导体处理装置的数据处理装置

    公开(公告)号：US06776872B2

    公开(公告)日：2004-08-17

    申请号：US10087982

    申请日：2002-03-05

    申请人： Junichi Tanaka ,  Toshio Masuda ,  Akira Kagoshima ,  Shoji Ikuhara ,  Hideyuki Yamamoto

    发明人： Junichi Tanaka ,  Toshio Masuda ,  Akira Kagoshima ,  Shoji Ikuhara ,  Hideyuki Yamamoto

    IPC分类号： H05H100

    CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L22/34

    摘要： A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.

    摘要翻译： 一种半导体制造装置的数据处理装置包括：用于执行晶片处理的半导体制造装置，用于收集与该处理相关联地生成的处理数据的数据收集半导体装置;以及数据复制半导体装置，用于提取收集的处理数据 数据采集​​半导体器件和用于产生处理数据的副本。 该装置可以包括用于分析由数据复制半导体器件产生的数据副本并用于诊断处理装置的处理状态的数据分析器。

    Body structure for motor vehicle
    14.
    发明授权
    Body structure for motor vehicle 失效
    汽车车身结构

    公开(公告)号：US5782525A

    公开(公告)日：1998-07-21

    申请号：US795865

    申请日：1997-02-06

    申请人： Masayuki Honma ,  Toshio Masuda

    发明人： Masayuki Honma ,  Toshio Masuda

    IPC分类号： B62D21/15 ,  B62D25/02 ,  B62D25/20

    CPC分类号： B62D25/02 ,  B62D21/157 ,  B62D25/025 ,  B62D25/2036

    摘要： A side body structure of a motor vehicle includes a first and second crash boxes at the connecting portion of a side sill and a rear wheel arch. The first crash box is provided outside of a side sill reinforcement and the second crash box is inside the side sill reinforcement. The second crash box is connected with a cross member extended in a transversal direction of the vehicle. In the event of a side impact, first the first crash box collapses and then the second crash box does. Finally, the impact energy is transferred to and absorbed by other body structures through the cross member. The side sill portion and the rear wheel arch portion can be prevented from intruding into a rear compartment so as to save passengers from serious injury.

    摘要翻译： 机动车辆的侧体结构包括在下纵梁和后轮拱的连接部分处的第一和第二碰撞箱。 第一个碰撞箱设置在侧梁加强件外侧，第二个碰撞箱位于下梁架内。 第二碰撞箱与在车辆的横向方向上延伸的横梁连接。 在发生侧面碰撞的情况下，首先碰撞盒第一个崩溃，然后是第二个碰撞盒。 最后，撞击能量通过横梁转移到其他身体结构并被其吸收。 可以防止下纵梁部分和后轮拱形部分进入后隔间，以免乘客受到严重伤害。

    Plasma processing system and apparatus and a sample processing method
    17.
    发明授权
    Plasma processing system and apparatus and a sample processing method 有权
    等离子体处理系统和设备及样品处理方法

    公开(公告)号：US07686917B2

    公开(公告)日：2010-03-30

    申请号：US11780014

    申请日：2007-07-19

    申请人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

    发明人： Toshio Masuda ,  Tatehito Usui ,  Mitsuru Suehiro ,  Hiroshi Kanekiyo ,  Hideyuki Yamamoto ,  Kazue Takahashi ,  Hiromichi Enami

    IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972

    摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

    摘要翻译： 等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。 该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。 直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光 通过通孔。 光发射器相对于板的后表面独立地可拆卸。

    Plasma processing apparatus and a plasma processing method
    18.
    发明申请
    Plasma processing apparatus and a plasma processing method 审中-公开
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20090008363A1

    公开(公告)日：2009-01-08

    申请号：US12230565

    申请日：2008-09-02

    申请人： Kazue Takahashi ,  Toshio Masuda ,  Tetsunori Kaji ,  Ken'etsu Yokogawa

    发明人： Kazue Takahashi ,  Toshio Masuda ,  Tetsunori Kaji ,  Ken'etsu Yokogawa

    IPC分类号： C23F1/02

    CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/32678 ,  H01L21/31116

    摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

    摘要翻译： 在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF和F的合适比例的等离子体，并且存在腐蚀特性根据蚀刻室的温度波动而波动的问题。 使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的 可以获得蚀刻特性。 由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热 可以容易地获得耐性性能对策。