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公开(公告)号:US09666752B2
公开(公告)日:2017-05-30
申请号:US14659968
申请日:2015-03-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Akio Yamashita , Yumiko Fukumoto , Yuugo Goto
CPC classification number: H01L33/005 , G02F1/1333 , G02F1/133305 , H01L27/1214 , H01L27/1266 , H01L27/15 , H01L27/322 , H01L27/3244 , H01L51/003 , H01L51/524 , H01L51/56 , H01L2227/326 , H01L2933/0025
Abstract: To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.
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公开(公告)号:US20150255325A1
公开(公告)日:2015-09-10
申请号:US14644375
申请日:2015-03-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/762 , H01L21/308
CPC classification number: H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
Abstract translation: 具有重量轻,柔性(弯曲)和整体薄的半导体元件(薄膜晶体管,薄膜二极管,硅PIN结的光电转换元件或硅电阻元件)的半导体器件是 以及制造半导体器件的方法。 在本发明中,元件不形成在塑料膜上。 相反,使用诸如基板的平板作为形式,衬底(第三衬底(17))和包括元件(剥离层(13))的层之间的空间填充有凝结剂(通常为粘合剂),凝固剂 用作第二接合构件(16),并且在粘合剂凝固之后剥离用作形式的基板(第三基板(17)),以通过凝固的粘合剂保持包括元件(剥离层(13))的层) (第二接合部件(16))。 以这种方式,本发明实现了薄膜的薄化和重量的减轻。
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公开(公告)号:US11133078B2
公开(公告)日:2021-09-28
申请号:US16780027
申请日:2020-02-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
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公开(公告)号:US10957723B2
公开(公告)日:2021-03-23
申请号:US16847933
申请日:2020-04-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Toru Takayama , Junya Maruyama , Yuugo Goto , Hideaki Kuwabara , Shunpei Yamazaki
IPC: H01L21/00 , H01L27/12 , H01L21/762 , H01L27/32 , B60R1/00 , B60R11/02 , B60R11/04 , H01L21/683 , B60R11/00
Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
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公开(公告)号:US20200294848A1
公开(公告)日:2020-09-17
申请号:US16832442
申请日:2020-03-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/762 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/308
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号:US10607883B2
公开(公告)日:2020-03-31
申请号:US15479311
申请日:2017-04-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/00 , H01L21/762 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/308 , H01L27/32
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号:US10580508B2
公开(公告)日:2020-03-03
申请号:US16547976
申请日:2019-08-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Masayuki Sakakura , Yuugo Goto , Hiroyuki Miyake , Daisuke Kurosaki
Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
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公开(公告)号:US10219395B2
公开(公告)日:2019-02-26
申请号:US14555644
申请日:2014-11-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Ryota Tajima , Yuugo Goto , Yumiko Yoneda , Junya Goto , Takuya Miwa
IPC: H01M10/058 , H05K5/00 , H01M2/02 , H01M2/16 , H01M2/18 , H01M10/04 , H01M2/06 , H01M2/26 , H01M4/58 , H01M10/052 , H01M10/0585
Abstract: To provide a power storage unit having a structure which is unlikely to break down by change in shape, such as bending. An electrode plate is covered with a sheet of an insulator which is folded in two. The sheet is preferably processed into a bag-like shape or an envelope-like shape by bonding overlapping portions of the sheet in the periphery of the electrode plate. The electrode plate and the sheet are fixed to an exterior body. In the case where the shape of the exterior body is changed by bending or the like, the electrode plate and the sheet can slide together in the exterior body. Thus, stress on the electrode plate due to bending can be relieved.
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公开(公告)号:US09620408B2
公开(公告)日:2017-04-11
申请号:US14644375
申请日:2015-03-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Junya Maruyama , Toru Takayama , Yuugo Goto
IPC: H01L21/00 , H01L21/762 , H01L27/12 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/308 , H01L27/32
CPC classification number: H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
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公开(公告)号:US09299879B2
公开(公告)日:2016-03-29
申请号:US14662551
申请日:2015-03-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC: G02F1/136 , H01L33/00 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/56 , H01L21/02 , H01L21/28 , H01L21/324 , H01L21/425 , H01L21/70 , H01L21/8234 , H01L27/15
CPC classification number: H01L27/1218 , H01L21/02175 , H01L21/28008 , H01L21/324 , H01L21/425 , H01L21/707 , H01L21/823487 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L29/78603 , H01L33/005 , H01L33/0054 , H01L51/003 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2933/0016
Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
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