公开(公告)号：US20240407211A1

公开(公告)日：2024-12-05

申请号：US18695104

申请日：2022-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro KATAYAMA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Shingo EGUCHI ,  Daiki NAKAMURA ,  Koji KUSUNOKI ,  Kensuke YOSHIZUMI

IPC: H10K59/131 ,  H10K50/19 ,  H10K59/38

Abstract: A display device in which a voltage drop is inhibited adequately is provided. The display device includes a common electrode included in a first light-emitting device in which a plurality of light-emitting layers are stacked and a second light-emitting device in which a plurality of light-emitting layers are stacked and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer, the second wiring layer is electrically connected to the first wiring layer through a contact hole of an insulating layer, and the first wiring laver has a lattice shape in a top view.

公开(公告)号：US20230354643A1

公开(公告)日：2023-11-02

申请号：US18138765

申请日：2023-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Manabu SATO ,  Hironori MATSUMOTO ,  Masataka NAKADA

IPC: H10K59/121 ,  H10K39/34 ,  G09G3/3233 ,  G06F3/042 ,  G06V40/13 ,  G06F3/041

CPC classification number: H10K59/1213 ,  H10K39/34 ,  G09G3/3233 ,  G06F3/042 ,  G06V40/1318 ,  G06F3/0412 ,  G09G2300/0852 ,  G09G2354/00 ,  G06F2203/04108

Abstract: An inexpensive display device with a narrow bezel is provided. The display device includes a first pixel including a light-emitting device, a second pixel including a light-receiving device, and a reading circuit for reading data obtained by the second pixel. The reading circuit includes a first circuit included in a mounted IC chip and a second circuit monolithically formed over a substrate over which a pixel circuit is formed. With this structure, a circuit corresponding to the second circuit can be omitted from the IC chip, so that the IC chip can be downsized.

公开(公告)号：US20230350256A1

公开(公告)日：2023-11-02

申请号：US18202557

申请日：2023-05-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Susumu KAWASHIMA ,  Kei TAKAHASHI ,  Koji KUSUNOKI ,  Masataka NAKADA ,  Ami SATO

IPC: G02F1/1368 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/136227

Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween. The pixel includes a first connection portion where the pixel electrode is electrically connected to the transistor and a second connection portion where the first conductive layer is electrically connected to the common electrode. The first conductive layer, the pixel electrode, and the common electrode each have a function of transmitting visible light.

公开(公告)号：US20230125324A1

公开(公告)日：2023-04-27

申请号：US17773168

申请日：2020-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Manabu SATO ,  Susumu KAWASHIMA ,  Koji KUSUNOKI ,  Hidenori MORI ,  Hironori MATSUMOTO ,  Daisuke KUROSAKI ,  Masami JINTYOU ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal. The fourth wiring is connected to the gate of the second transistor and supplied with a second signal obtained by inverting the first signal.

公开(公告)号：US20180374995A1

公开(公告)日：2018-12-27

申请号：US16120851

申请日：2018-09-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Shingo EGUCHI ,  Mitsuo MASHIYAMA ,  Masatoshi KATANIWA ,  Hironobu SHOJI ,  Masataka NAKADA ,  Satoshi SEO

IPC: H01L33/44 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

公开(公告)号：US20180350994A1

公开(公告)日：2018-12-06

申请号：US15774930

申请日：2016-11-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04 ,  H01L29/66

CPC classification number: G09F9/30 ,  H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20170317151A1

公开(公告)日：2017-11-02

申请号：US15496292

申请日：2017-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA

IPC: H01L27/32 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  H01L51/50 ,  G02F1/1368 ,  H01L51/52 ,  H01L29/786 ,  G02F1/1333

CPC classification number: H01L27/3232 ,  G02F1/13338 ,  G02F1/133553 ,  G02F1/133603 ,  G02F1/134309 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2201/44 ,  G02F2202/36 ,  G06F1/1652 ,  G06F3/044 ,  G06F2203/04112 ,  H01L27/323 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3267 ,  H01L27/3276 ,  H01L29/78645 ,  H01L29/7869 ,  H01L51/502 ,  H01L51/5215 ,  H01L2227/323

Abstract: A novel display device that is highly convenient or reliable is provided. The display device includes a first display element, a second display element, a first transistor, a second transistor, and a third transistor. The first display element includes a liquid crystal layer. The second display element includes a light-emitting layer. The first transistor has a function of selecting the first display element. The second transistor has a function of selecting the second display element. The third transistor has a function of controlling the driving of the second display element. The first transistor and the second transistor are formed over the same surface. The third transistor is formed above the first transistor and the second transistor and includes one of a source electrode and a drain electrode of the second transistor as a gate electrode.

公开(公告)号：US20160336352A1

公开(公告)日：2016-11-17

申请号：US15220430

申请日：2016-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/3265 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20150255740A1

公开(公告)日：2015-09-10

申请号：US14632115

申请日：2015-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Takayuki ABE ,  Naoyuki SENDA

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5246 ,  H01L27/323 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5243 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

Abstract translation: 提供了由裂纹引起的缺陷较少的柔性装置。 还提供了高生产率的柔性装置。 此外，即使在高温高湿环境下也能提供显示故障少的柔性装置。 发光器件包括第一柔性衬底，第二柔性衬底，缓冲层，第一裂纹抑制层和发光元件。 第一柔性基板的第一表面面向第二柔性基板的第二表面。 缓冲层和第一裂纹抑制层设置在第一柔性基板的第一表面上。 缓冲层与第一裂纹抑制层重叠。 发光元件设置在第二柔性基板的第二表面上。

公开(公告)号：US20150221775A1

公开(公告)日：2015-08-06

申请号：US14610383

申请日：2015-01-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78648

Abstract: To provide a semiconductor device with small parasitic capacitance. Alternatively, to provide a semiconductor device with low power consumption. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitor includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.

Abstract translation: 提供具有小寄生电容的半导体器件。 或者，为了提供低功耗的半导体器件。 半导体器件包括晶体管和电容器。 晶体管包括第一导体，第一导体上的第一绝缘体，包括与第一导体重叠的区域的半导体，第一绝缘体插入其间，半导体上的第二绝缘体，包括与半导体重叠的区域的第二导体， 插入其间的第二绝缘体，以及包括与半导体的顶表面接触的区域的第三导体和第四导体。 电容器包括由与第一导体相同的层形成的层和由与第三导体和第四导体相同的层形成的层。