公开(公告)号：US20230127474A1

公开(公告)日：2023-04-27

申请号：US17892190

申请日：2022-08-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hitoshi KUNITAKE ,  Ryunosuke HONDA ,  Tomoaki ATSUMI

IPC: H10B12/00 ,  G11C11/405 ,  G11C11/4074 ,  H01L29/66

Abstract: A semiconductor device capable of obtaining the threshold voltage of a transistor is provided. The semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch. A gate and a source of the first transistor are electrically connected to each other. A first terminal of the first capacitor is electrically connected to the source. A second terminal and the first output terminal of the first capacitor are electrically connected to a back gate of the first transistor. The first switch controls input of a first voltage to the back gate. A second voltage is input to a drain of the first transistor. The second switch controls input of a third voltage to the source.

公开(公告)号：US20210226063A1

公开(公告)日：2021-07-22

申请号：US17264503

申请日：2019-08-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Ryunosuke HONDA

IPC: H01L29/786

Abstract: A semiconductor device that stably operates even at high temperature is provided. The semiconductor device includes a metal oxide, an insulating layer, a first conductive layer, a second conductive layer, and a third conductive layer. The metal oxide includes a first region, a second region, and a third region. The first region overlaps with the first conductive layer. The second region overlaps with the second conductive layer. The third region overlaps with the third conductive layer with the insulating layer interposed therebetween. The value of the ratio of the carrier concentration in the first region to the carrier concentration in the third region is 100 or more. The value of the ratio of the carrier concentration in the second region to the carrier concentration in the third region is 100 or more.

公开(公告)号：US20170278874A1

公开(公告)日：2017-09-28

申请号：US15464534

申请日：2017-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20160300952A1

公开(公告)日：2016-10-13

申请号：US15091009

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/51 ,  H01L27/105 ,  H01L29/417 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49

Abstract: A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region.

Abstract translation: 提供一分钟晶体管。 半导体器件包括衬底上的半导体，半导体上的第一导体和第二导体，第一导体和第二导体上的第一绝缘体，半导体上的第二绝缘体，第二绝缘体上的第三绝缘体，以及 第三绝缘体上的第三导体。 第三绝缘体与第一绝缘体的侧表面接触。 半导体包括半导体与第一导体的底表面重叠的第一区域，半导体与第二导体的底表面重叠的第二区域和半导体与第三导体的底表面重叠的第三区域 导体。 半导体的顶表面和第三导体的底表面之间的长度比第一区域和第三区域之间的长度长。