公开(公告)号：US20250107232A1

公开(公告)日：2025-03-27

申请号：US18600804

申请日：2024-03-11

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Kaidi ZHANG ,  Baiquan LIN ,  Liying WANG ,  Linzhi WANG ,  Haotian LU ,  Kerui XI

IPC: H01L27/12

Abstract: A thin-film transistor structure and an electronic device are provided. The thin-film transistor structure includes a first transistor and a second transistor. A potential of the signal input electrode of the first transistor is greater than that of the signal receiving component, and the first transistor is turned on; and a potential of the signal input electrode of the second transistor is less than that of the signal receiving component, and the second transistor is turned on; and an overlapping area of the signal output electrode of the first transistor and the etching barrier layer is greater than that of the signal input electrode of the first transistor and the etching barrier layer; and an overlapping area of the signal input electrode of the second transistor and the etching barrier layer is larger than that of the signal output electrode of the second transistor and the etching barrier layer.

公开(公告)号：US20240165608A1

公开(公告)日：2024-05-23

申请号：US18114446

申请日：2023-02-27

Applicant: Shanghai Tianma Micro-electronics Co., Ltd.

Inventor： Kaidi ZHANG ,  Baiquan LIN ,  Yunfei BAI ,  Wei LI ,  Xiaojun CHEN ,  Qingsan ZHU

IPC: B01L3/00

CPC classification number: B01L3/502707 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/12

Abstract: Microfluidic device and application method thereof are provided. The microfluidic device includes a first substrate and a second substrate that are oppositely arranged along a first direction; and a first storage box and a second storage box that are oppositely arranged along the first direction. The first direction is a thickness direction of the microfluidic device. The first storage box includes a first storage cavity and a first opening communicating with the first storage cavity, and the first substrate is fixed in the first storage cavity. The second storage box includes a second storage cavity and a second opening communicating with the second storage cavity, and the second substrate is fixed in the second storage cavity. Along the first direction, the first opening is arranged opposite to the second opening and the first storage box is nested with the second storage box.

公开(公告)号：US20230211345A1

公开(公告)日：2023-07-06

申请号：US17684719

申请日：2022-03-02

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Wei LI ,  Baiquan LIN ,  Kaidi ZHANG ,  Yunfei BAI ,  Ping SU ,  Kerui XI ,  Zhenyu JIA

IPC: B01L3/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B01L3/502784 ,  B81B3/0089 ,  B81C1/00714 ,  B01L2200/12 ,  B01L2300/161 ,  B01L2300/0819 ,  B01L2300/1805 ,  B01L2400/0415 ,  B81B2201/057 ,  B81B2203/0353 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2201/0198

Abstract: A microfluidic chip and a fabrication method of the microfluidic chip are provided. The microfluidic chip includes an array substrate, and a hydrophobic layer disposed on a side of the array substrate. The hydrophobic layer includes at least one through-hole, and a through-hole of the at least one through-hole penetrates through the hydrophobic layer along a direction perpendicular to a plane of the array substrate. The microfluidic chip also includes at least one hydrophilic structure. A hydrophilic structure of the at least one hydrophilic structure is disposed in the through-hole.

公开(公告)号：US20230063019A1

公开(公告)日：2023-03-02

申请号：US17455148

申请日：2021-11-16

Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.

Inventor： Kaidi ZHANG ,  Baiquan LIN ,  Wei LI ,  Yunfei BAI ,  Kerui XI ,  Feng QIN

IPC: B01L3/00 ,  G02B26/00 ,  G09G3/34

Abstract: A driving circuit, a driving method and a microfluidic substrate are provided. The driving circuit includes a first switching unit, a second switching unit, a reset unit, a first capacitor, and a second capacitor. In a first stage of a driving process of the driving circuit, the first switching unit is turned on, a first voltage signal is transmitted to a first node, the second switching unit is turned on, a second voltage signal is input to an output terminal of the driving circuit, and the driving circuit outputs an AC signal. In a second stage of the driving process, the first switching unit is turned off, the valid signal output by the second scan signal terminal controls the reset unit to be turned on, a third voltage signal is input to the output terminal of the driving circuit for reset, and the driving circuit outputs a DC signal.